1
Motorola Bipolar Power Transistor Device Data
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
Total Harmonic Distortion Characterized
High DC Current Gain hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
250
Vdc
CollectorBase Voltage
VCBO
400
Vdc
EmitterBase Voltage
VEBO
5
Vdc
CollectorEmitter Voltage 1.5 V
VCEX
400
Vdc
Collector Current -- Continuous
Collector Current --
Peak (1)
IC
16
30
Adc
Base Current Continuous
IB
5
Adc
Total Power Dissipation @ TC = 25
C
Derate Above 25
C
PD
200
1.43
Watts
W/
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.7
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
250
--
--
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
--
--
100
Adc
(1) Pulse Test: Pulse Width = 5.0
s, Duty Cycle
10%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJL21193/D
Motorola, Inc. 1995
MJL21193
MJL21194
16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
200 WATTS
*
*Motorola Preferred Device
PNP
*
NPN
CASE 340G02
TO3PBL
MJL21193 MJL21194
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
--
--
100
Adc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
--
--
100
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (nonrepetitive)
(VCE = 80 Vdc, t = 1 s (nonrepetitive)
IS/b
4.0
2.25
--
--
--
--
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
25
8
--
--
75
--
BaseEmitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
--
--
2.2
Vdc
CollectorEmitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
--
--
--
--
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
matched
THD
--
--
0.8
0.08
--
--
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
--
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
--
--
500
pF
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
2%
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f
, CURRENT
GAIN BANDWIDTH PRODUCT
(MHz)
T
PNP MJL21193
f
, CURRENT
GAIN BANDWIDTH PRODUCT
(MHz)
T
NPN MJL21194
IC COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
1.0
10
0.1
8.0
7.0
6.0
5.0
4.0
3.0
2.0
0
1.0
10
0.1
1.0
VCE = 10 V
5 V
TJ = 25
C
ftest = 1 MHz
10 V
VCE = 5 V
TJ = 25
C
ftest = 1 MHz
MJL21193 MJL21194
3
Motorola Bipolar Power Transistor Device Data
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
h FE
, DC CURRENT
GAIN
IC COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
h FE
, DC CURRENT
GAIN
h FE
, DC CURRENT
GAIN
IC COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
I C
, COLLECT
OR CURRENT
(A)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
I C
, COLLECT
OR CURRENT
(A)
PNP MJL21193
NPN MJL21194
h FE
, DC CURRENT
GAIN
TYPICAL CHARACTERISTICS
PNP MJL21193
PNP MJL21193
NPN MJL21194
NPN MJL21194
1000
100
10
100
10
1.0
0.1
1000
100
10
100
10
1.0
0.1
1000
100
10
100
10
1.0
0.1
1000
100
10
100
10
1.0
0.1
30
0
25
20
15
10
5.0
0
5.0
10
15
20
25
35
0
30
25
20
15
5.0
0
5.0
10
15
20
25
10
VCE = 20 V
TJ = 100
C
25
C
25
C
VCE = 20 V
TJ = 100
C
25
C
25
C
TJ = 100
C
25
C
25
C
VCE = 5 V
TJ = 100
C
25
C
25
C
VCE = 20 V
TJ = 25
C
TJ = 25
C
1.5 A
IB = 2 A
1 A
0.5 A
IB = 2 A
1.5 A
1 A
0.5 A
MJL21193 MJL21194
4
Motorola Bipolar Power Transistor Device Data
V
BE(on)
, BASEEMITTER VOL
T
AGE (VOL
TS)
Figure 9. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
SA
TURA
TION VOL
T
AGE (VOL
TS)
Figure 10. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
SA
TURA
TION VOL
T
AGE (VOL
TS)
Figure 11. Typical BaseEmitter Voltage
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical BaseEmitter Voltage
IC, COLLECTOR CURRENT (AMPS)
V
BE(on)
, BASEEMITTER VOL
T
AGE (VOL
TS)
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200
C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
PNP MJL21193
NPN MJL21194
TYPICAL CHARACTERISTICS
PNP MJL21193
NPN MJL21194
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
I C
, COLLECT
OR CURRENT
(AMPS)
3.0
2.5
2.0
1.5
1.0
0.5
0
100
10
1.0
0.1
1.4
100
10
1.0
0.1
1.2
1.0
0.8
0.6
0.4
0.2
0
10
100
10
1.0
0.1
1.0
0.1
10
100
10
1.0
0.1
1.0
0.1
100
1.0
10
100
1000
10
1.0
0.1
TJ = 25
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TJ = 25
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TC = 25
C
1 SEC
MJL21193 MJL21194
5
Motorola Bipolar Power Transistor Device Data
Figure 14. MJL21193 Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
Figure 15. MJL21194 Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50
0.5
0.5
8.0
50 V
DUT
DUT
+50 V
Figure 16. Typical Total Harmonic Distortion
Figure 17. Total Harmonic Distortion Test Circuit
FREQUENCY (Hz)
T HD
,
T
OT
AL
HARMONIC
DIST
OR
TION (%)
10000
1000
100
100
10
1.0
0.1
10000
1000
100
100
10
1.0
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100000
10000
1000
100
10
TC = 25
C
Cob
Cib
TC = 25
C
Cib
Cob
f(test) = 1 MHz)
f(test) = 1 MHz)
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