1
Motorola Bipolar Power Transistor Device Data
Designer's
TM
Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for highvoltage, highspeed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
lineoperated switchmode applications. The MJ16012 and MJW16012 are selected
high gain versions of the MJ16010 and MJW16010 for applications where drive
current is limited.
Switching Regulators
Fast TurnOff Times -- TC = 100
C
Inverters
50 ns Inductive Fall Time (Typ)
Solenoids
90 ns Inductive Crossover Time (Typ)
Relay Drivers
800 ns Inductive Storage Time (Typ)
Motor Controls
100
_
C Performance Specified for:
Deflection Circuits
ReverseBiased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
MJ16010
MJ16012
MJW16010
MJW16012
Unit
CollectorEmitter Voltage
VCEO
450
Vdc
CollectorEmitter Voltage
VCEV
850
Vdc
EmitterBase Voltage
VEB
6.0
Vdc
Collector Current -- Continuous
-- Peak (1)
IC
ICM
15
20
Adc
Base Current -- Continuous
-- Peak (1)
IB
IBM
10
15
Adc
Total Device Dissipation
@ TC = 25
_
C
@ TC = 100
_
C
Derate above 25
_
C
PD
1 75
100
1.0
135
53 8
1.11
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to 200
55 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.0
0.93
_
C/W
Lead Temperature for Soldering
Purposes, 1/8
from Case for
5 Seconds
TL
275
_
C
(1) Pulse Test: Pulse Width
v
50
s, Duty Cycle
w
10%
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ16010/D
Motorola, Inc. 1995
MJ16010
MJW16010
MJ16012
MJW16012
*Motorola Preferred Device
15 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
135 AND 175 WATTS
*
*
CASE 107
TO204AA
(TO3)
MJ16010
MJ16012
CASE 340F03
TO247AE
MJW16010
MJW16012
REV 2
MJ16010 MJW16010 MJ16012 MJW16012
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Table 2)
(IC = 100 mA, IB = 0)
VCEO(sus)
450
--
--
Vdc
Collector Cutoff Current
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100
_
C)
ICEV
--
--
--
--
0.25
1.5
mAdc
Collector Cutoff Current
(VCE = 850 Vdc, RBE = 50
, TC = 100
_
C)
ICER
--
--
2.5
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
--
--
10
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 15
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 16
ON CHARACTERISTICS (1)
CollectorEmitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.7 Adc)
(IC = 10 Adc, IB = 1.3 Adc)
(IC = 10 Adc, IB = 1.3 Adc, TC = 100
_
C)
VCE(sat)
--
--
--
--
--
--
2.5
3.0
3.0
Vdc
BaseEmitter Saturation Voltage
(IC = 10 Adc, IB = 1.3 Adc)
(IC = 10 Adc, IB = 1.3 Adc, TC = 100
_
C)
VBE(sat)
--
--
--
--
1.5
1.5
Vdc
DC Current Gain
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
5.0
--
--
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
--
--
400
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.3 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 2.6 Adc,
RB2 = 1.6
)
td
--
20
--
ns
Rose Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.3 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 2.6 Adc,
RB2 = 1.6
)
tr
--
200
--
Storage Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.3 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 2.6 Adc,
RB2 = 1.6
)
ts
--
1200
--
Fall Time
IB1 = 1.3 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
tf
--
200
--
Storage Time
Duty Cycle
v
2.0%)
(VBE(off) = 5.0 Vdc)
ts
--
650
--
Fall Time
v
2.0%)
(VBE(off) = 5.0 Vdc)
tf
--
80
--
Inductive Load (Table 2)
Storage Time
(IC = 10 Adc,
IB1 = 1.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 100
_
C)
tsv
--
800
1800
ns
Fall Time
(IC = 10 Adc,
IB1 = 1.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 100
_
C)
tfi
--
50
200
Crossover Time
(IC = 10 Adc,
IB1 = 1.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
_
C)
tc
--
90
250
Storage Time
IB1 = 1.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 150
_
C)
tsv
--
1050
--
Fall Time
VCE(pk) = 400 Vdc)
(TC = 150
_
C)
tfi
--
70
--
Crossover Time
_
C)
tc
--
120
--
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
v
2.0%
MJ16010 MJW16010 MJ16012 MJW16012
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Table 2)
(IC = 100 mA, IB = 0)
VCEO(sus)
450
--
--
Vdc
Collector Cutoff Current
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc. TC = 100
_
C)
ICEV
--
--
--
--
0.25
1.5
mAdc
Collector Cutoff Current
(VCE = 850 Vdc, RBE = 50
, TC = 100
_
C)
ICER
--
--
2.5
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
--
--
10
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 15
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 16
ON CHARACTERISTICS (1)
CollectorEmitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.7 Adc)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 10 Adc, IB = 1.0 Adc, TC = 100
_
C)
VCE(sat)
--
--
--
--
--
--
2.5
3.0
3.0
Vdc
BaseEmitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 10 Adc, IB = 1.0 Adc, TC = 100
_
C)
VBE(sat)
--
--
--
--
1.5
1.5
Vdc
DC Current Gain
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
7.0
--
--
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
--
--
400
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.0 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 2.0 Adc,
RB2 = 1.6
)
td
--
20
--
ns
Rose Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.0 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 2.0 Adc,
RB2 = 1.6
)
tr
--
200
--
Storage Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.0 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 2.0 Adc,
RB2 = 1.6
)
ts
--
900
--
Fall Time
IB1 = 1.0 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
tf
--
150
--
Storage Time
Duty Cycle
v
2.0%)
(VBE(off) = 5.0 Vdc)
ts
--
500
--
Fall Time
v
2.0%)
(VBE(off) = 5.0 Vdc)
tf
--
40
--
Inductive Load (Table 2)
Storage Time
(IC = 10 Adc,
IB1 = 1.0 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 100
_
C)
tsv
--
650
1500
ns
Fall Time
(IC = 10 Adc,
IB1 = 1.0 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 100
_
C)
tfi
--
30
150
Crossover Time
(IC = 10 Adc,
IB1 = 1.0 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
_
C)
tc
--
50
200
Storage Time
IB1 = 1.0 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 150
_
C)
tsv
--
850
--
Fall Time
VCE(pk) = 400 Vdc)
(TC = 150
_
C)
tfi
--
30
--
Crossover Time
_
C)
tc
--
70
--
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
v
2.0%
MJ16010 MJW16010 MJ16012 MJW16012
4
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
C, CAP
ACIT
ANCE (pF)
V
BE
, BASEEMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0.15
IC, COLLECTOR CURRENT (AMPS)
0.3
1.0
1.5
1.0
0.7
0.4
5.0
IC, COLLECTOR CURRENT (AMPS)
3.0
2.0
1.0
0.5
0.2
0.15
IC = 1.0 A
0.2
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
3.0
0.5
2.0
10
20
10
5.0
Figure 2. Collector Saturation Region
0.1
IB, BASE CURRENT (AMPS)
0.1
0.2
0.5
0.7
0.3
0.2
50
h
FE
, DC CURRENT
GAIN
VCE = 5.0 V
1.0
2.0
5.0
10
Figure 3. CollectorEmitter Saturation Voltage
7.0
0.7
0.15 0.2
0.5
1.0
15
2.0
7.0
Figure 4. BaseEmitter Voltage
Figure 5. Collector Cutoff Region
2.0
0.5
104
VBE, BASEEMITTER VOLTAGE (VOLTS)
101
0
0.05
TC = 25
C
5.0 A
TC = 100
C
25
C
20
1.0
5.0
f = 5.0
TC = 25
C
15
0.4
Figure 6. Capacitance
10000
VR, REVERSE VOLTAGE (VOLTS)
Cob
0.1
, COLLECT
OR CURRENT
(
A)
I C
10 A
15 A
f = 10
TC = 25
C
f = 10
TC = 100
C
0.3
TC = 25
C
f = 10
103
102
101
100
0.2
+ 0.2
+ 0.4
+ 0.6
TJ = 150
C
125
C
100
C
75
C
REVERSE
FORWARD
25
C
VCE = 250 V
5000
2000
1000
500
200
100
50
20
10
0.3 0.5 1.0 2.0
5.0 10
20
50 100
500 850
1.0
0.05
0.02
0.7
0.3
3.0
5.0
10
0.07
0.1
0.3
0.7
100
C
75
C
TC = 25
C
0.2
0.5
0.2
0.5
3.0
2.0
5.0
10
300
3000
30
300
Cib
TYPICAL STATIC CHARACTERISTICS
MJ16010 MJW16010 MJ16012 MJW16012
5
Motorola Bipolar Power Transistor Device Data
t c
, CROSSOVER
TIME (ns)
t fi
, COLLECT
OR CURRENT
F
ALL
TIME (ns)
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Storage Time
Figure 8. Storage Time
IC, COLLECTOR CURRENT (AMPS)
2.0
3.0
5.0
7.0
15
5000
2000
1000
200
500
300
, ST
ORAGE
TIME (ns)
t sv
1.5
100
IC, COLLECTOR CURRENT (AMPS)
2.0
3.0
5.0
7.0
15
1000
300
200
100
50
10
1.5
20
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
2.0
3.0
5.0
7.0
15
500
300
200
100
50
15
1.5
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Collector Current Fall Time
Figure 10. Collector Current Fall Time
Figure 11. Crossover Time
Figure 12. Crossover Time
2.0 V
VBE(off) = 0 V
5.0 V
f* = 5.0
TC = 75
C
VCC = 20 V
2.0
3.0
5.0
7.0
15
5000
2000
1000
700
500
300
, ST
ORAGE
TIME (ns)
t sv
1.5
200
2.0 V
VBE(off) = 0 V
5.0 V
VBE(off) = 0 V
2.0 V
5.0 V
t fi
, COLLECT
OR CURRENT
F
ALL
TIME (ns)
1000
300
200
100
50
10
20
2.0 V
VBE(off) = 0 V
5.0 V
5.0 V
2.0 V
VBE(off) = 0 V
t c
, CROSSOVER
TIME (ns)
2.0
3.0
5.0
7.0
15
500
300
200
100
20
15
1.5
VBE(off) = 0 V
2.0 V
5.0 V
f* = 10
TC = 75
C
VCC = 20 V
10
3000
0.07
0.05
10
3000
100
0.05
f* = 10
TC = 75
C
VCC = 20 V
f* = 10
TC = 75
C
VCC = 20 V
f* = 5.0
TC = 75
C
VCC = 20 V
f* = 5.0
TC = 75
C
VCC = 20 V
500
10
2.0
3.0
5.0
7.0
15
1.5
10
500
10
10
20
1500
1000
50
1000
1500
*
f =
IC
IB1
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