1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
JFET VHF/UHF Amplifier Transistor
NChannel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDS
25
Vdc
GateSource Voltage
VGS
25
Vdc
Gate Current
IG
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(1)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
556
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
DEVICE MARKING
MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0
Adc, VDS = 0)
V(BR)GSS
25
--
--
Vdc
Gate Reverse Current (VGS = 15 Vdc)
Gate Reverse Current
(VGS = 15 Vdc, TA = 125
C)
IGSS
--
--
--
--
1.0
1.0
nAdc
Adc
Gate Source Cutoff Voltage
MMBFJ309
(VDS = 10 Vdc, ID = 1.0 nAdc)
MMBFJ310
VGS(off)
1.0
2.0
--
--
4.0
6.5
Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current
MMBFJ309
(VDS = 10 Vdc, VGS = 0)
MMBFJ310
IDSS
12
24
--
--
30
60
mAdc
GateSource Forward Voltage (IG = 1.0 mAdc, VDS = 0)
VGS(f)
--
--
1.0
Vdc
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|Yfs|
8.0
--
18
mmhos
Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|yos|
--
--
250
mhos
Input Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Ciss
--
--
5.0
pF
Reverse Transfer Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Crss
--
--
2.5
pF
Equivalent ShortCircuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
en
--
10
--
nV
Hz
1. FR 5 = 1.0
0.75
0.062 in.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MMBFJ309LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBFJ309LT1
MMBFJ310LT1
1
2
3
CASE 318 08, STYLE 10
SOT 23 (TO 236AB)
Motorola, Inc. 1997
2 SOURCE
3
GATE
1 DRAIN
MMBFJ309LT1 MMBFJ310LT1
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
C1 = C2 = 0.8 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539002D.
C5 = C6 = 5000 pF Erie (2443000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33
H Miller #923030.
L1 = One Turn #16 Cu, 1/4
I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4
I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4
I.D. (Air Core).
50
SOURCE
50
LOAD
U310
C3
C2
C6
C7
C4
1.0 k
RFC
L1
L2P
L2S
+VDD
C1
C5
Figure 1. 450 MHz CommonGate Amplifier Test Circuit
70
60
50
40
30
20
,
SA
TURA
TION DRAIN CURRENT
(mA)
5.0
4.0
3.0
2.0
1.0
0
ID VGS, GATESOURCE VOLTAGE (VOLTS)
I DSS
10
0
70
60
50
40
30
20
10
, DRAIN CURRENT
(mA)
I D
IDSS VGS, GATESOURCE CUTOFF VOLTAGE (VOLTS)
Figure 2. Drain Current and Transfer
Characteristics versus GateSource Voltage
VDS = 10 V
IDSS
+ 25
C
TA = 55
C
+ 25
C
+ 25
C
55
C
+150
C
+150
C
VGS, GATESOURCE VOLTAGE (VOLTS)
5.0
4.0
3.0
2.0
1.0
0
35
30
25
20
15
10
5.0
0
, FOR
W
ARD
TRANSCONDUCT
ANCE
(mmhos)
Y fs
Figure 3. Forward Transconductance
versus GateSource Voltage
VDS = 10 V
f = 1.0 MHz
TA = 55
C
+ 25
C
+150
C
+ 25
C
55
C
+150
C
ID, DRAIN CURRENT (mA)
100 k
10 k
1.0 k
100
1.0 k
100
10
1.0
0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
,
FOR
W
ARD
TRANSCONDUCT
ANCE ( mhos)
Y fs
, OUTPUT
ADMITT
ANCE ( mhos)
Y os
VGS(off) = 2.3 V =
VGS(off) = 5.7 V =
Figure 4. CommonSource Output
Admittance and Forward Transconductance
versus Drain Current
Yfs
Yfs
Yos
VGS, GATE SOURCE VOLTAGE (VOLTS)
5.0
4.0
3.0
2.0
1.0
0
6.0
7.0
8.0
9.0
10
CAP
ACIT
ANCE (pF)
10
7.0
4.0
1.0
0
120
96
72
48
24
0
, ON RESIST
ANCE
(OHMS)
R
DS
RDS
Cgs
Cgd
Figure 5. On Resistance and Junction
Capacitance versus GateSource Voltage
MMBFJ309LT1 MMBFJ310LT1
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
|Y
11
|, |Y
21
|, |Y
22
| (mmhos)
Y
12
(mmhos)
30
24
18
12
6.0
0
1000
100
200
300
500
700
f, FREQUENCY (MHz)
3.0
2.4
1.8
1.2
0.6
|S21|, |S11|
0.45
0.39
0.33
0.27
0.21
0.15
0.85
0.79
0.73
0.67
0.61
0.55
|S12|, |S22|
0.060
0.048
0.036
0.024
0.012
1.00
0.98
0.96
0.94
0.92
0.90
1000
100
200
300
500
700
f, FREQUENCY (MHz)
Figure 6. CommonGate Y Parameter
Magnitude versus Frequency
Figure 7. CommonGate S Parameter
Magnitude versus Frequency
f, FREQUENCY (MHz)
ID, DRAIN CURRENT (mA)
NF
, NOISE FIGURE (dB)
NF
, NOISE FIGURE (dB)
G
,
POWER GAIN (dB)
pg
G
,
POWER GAIN (dB)
pg
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
4.0
6.0
8.0
10
12
14
16
18
20
22
24
24
21
18
15
12
9.0
6.0
3.0
0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
50
100
200 300
500 700 1000
26
22
18
14
10
6.0
2.0
VDS = 10 V
ID = 10 mA
TA = 25
C
Y11
Y21
Y22
Y12
S22
S21
S11
S12
Gpg
NF
VDS = 10 V
ID = 10 mA
TA = 25
C
VDD = 20 V
f = 450 MHz
BW
10 MHz
CIRCUIT IN FIGURE 1
VDS = 10 V
ID = 10 mA
TA = 25
C
CIRCUIT IN FIGURE 1
Gpg
NF
f, FREQUENCY (MHz)
21,
11
50
40
30
20
10
0
180
170
160
150
140
130
12,
22
2
0
40
80
120
160
200
20
60
100
140
180
87
86
85
84
83
82
1000
100
200
300
500
700
Figure 8. CommonGate Y Parameter
PhaseAngle versus Frequency
f, FREQUENCY (MHz)
11,
12
120
100
80
60
40
20
20
40
60
80
100
120
21,
22
0
40
80
20
60
100
1000
100
200
300
500
700
Figure 9. S Parameter PhaseAngle
versus Frequency
22
21
12
11
VDS = 10 V
ID = 10 mA
TA = 25
C
11
21
22
21
11
12
VDS = 10 V
ID = 10 mA
TA = 25
C
Figure 10. Noise Figure and
Power Gain versus Drain Current
Figure 11. Noise Figure and Power Gain
versus Frequency
MMBFJ309LT1 MMBFJ310LT1
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 12. 450 MHz IMD Evaluation Amplifier
BW (3 dB) 36.5 MHz
ID 10 mAdc
VDS 20 Vdc
Device case grounded
IM test tones f1 = 449.5 MHz, f2 = 450.5 MHz
C1 = 110 pF Johanson Air variable trimmer.
C2, C5 = 100 pF feed thru button capacitor.
C3, C4, C6 = 0.56 pF Johanson Air variable
trimmer.
L1 = 1/8
x 1/32
x 15/8
copper bar.
L2, L4 = Ferroxcube Vk200 choke.
L3 = 1/8
x 1/32
x 17/8
copper bar.
INPUT
RS = 50
C1
C2
L1
L2
VS
S
G
D
SHIELD
C3
U310
C4
VD
L3
C5
L4
C6
OUTPUT
RL = 50
Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and
C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is
29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For
example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
Example of intercept point plot use:
Assume two inband signals of 20 dBm at the amplifier input.
They will result in a 3rd order IMD signal at the output of
90 dBm. Also, each signal level at the output will be
11 dBm, showing an amplifier gain of 9.0 dB and an
intermodulation ratio (IMR) capability of 79 dB. The gain and
IMR values apply only for signal levels below comparison.
Figure 13. Two Tone 3rd Order Intercept Point
20
40
60
80
100
120
OUTPUT
POWER PER
T
ONE
(dBm)
120
+20
100
80
60
INPUT POWER PER TONE (dBm)
0
+20
+40
40
20
0
3RD ORDER INTERCEPT POINT
FUNDAMENTAL OUTPUT
3RD ORDER IMD OUTPUT
U310 JFET
VDS = 20 Vdc
ID = 10 mAdc
F1 = 449.5 MHz
F2 = 450.5 MHz
MMBFJ309LT1 MMBFJ310LT1
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT23 POWER DISSIPATION
The power dissipation of the SOT23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, R
JA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT23 package,
PD can be calculated as follows:
PD =
TJ(max) TA
R
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25
C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150
C 25
C
556
C/W
= 225 milliwatts
The 556
C/W for the SOT23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad
TM
. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10
C.
The soldering temperature and time shall not exceed
260
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
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