1
MMBR571LT1 MRF571 MRF5711LT1
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
High-Frequency Transistors
Designed for low noise, wide dynamic range frontend amplifiers and
lownoise VCO's. Available in a surfacemountable plastic packages. This
Motorola series of smallsignal plastic transistors offers superior quality and
performance at low cost.
High GainBandwidth Product
fT = 8.0 GHz (Typ) @ 50 mA
Low Noise Figure
NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)
High Gain
GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)
High Power Gain
Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1)
StateoftheArt Technology
Fine Line Geometry
IonImplanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
10
Vdc
CollectorBase Voltage
VCBO
20
Vdc
EmitterBase Voltage
VEBO
3.0
Vdc
Collector Current -- Continuous
IC
80
mA
Total Device Dissipation @ Tcase = 75
C
MMBR571LT1, MRF5711LT1
Derate linearly above Tcase = 75
C @
PD(max)
0.33
4.44
W
mW/
C
Total Device Dissipation (1) @ TC = 75
C
Derate above 75
C
MRF571
PD
0.58
7.73
Watts
mW/
C
Operating and Storage Temperature
Tstg
55 to
+150
C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF5711LT1, MMBR571LT1
R
JC
225
C/W
Thermal Resistance, Junction to Case
MRF571
R
JC
130
C/W
Maximum Junction Temperature
TJmax
150
C
DEVICE MARKING
MMBR571LT1 = 7X
MRF5711LT1 = 02
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MMBR571LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBR571LT1
MRF571
MRF5711LT1
IC = 80 mA
LOW NOISE
HIGHFREQUENCY
TRANSISTORS
CASE 31808, STYLE 6
SOT23
LOW PROFILE
MMBR571LT1
CASE 318A05, STYLE 1
SOT143
LOW PROFILE
MRF5711LT1
CASE 31701, STYLE 2
MACROX
MRF571
Motorola, Inc. 1997
REV 8
MMBR571LT1 MRF571 MRF5711LT1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mA, IB = 0)
V(BR)CEO
10
12
--
Vdc
CollectorBase Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
20
--
--
Vdc
EmitterBase Breakdown Voltage (IE = 50
Adc, IC = 0)
V(BR)EBO
2.5
--
--
Vdc
Collector Cutoff Current (VCB = 8.0 Vdc, IE = 0)
ICBO
--
--
10
Adc
ON CHARACTERISTICS
DC Current Gain (IC = 30 mAdc, VCE = 5.0 Vdc)
hFE
50
--
300
--
DYNAMIC CHARACTERISTICS
CollectorBase Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MMBR571LT1
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)
MRF5711LT1, MRF571
Ccb
--
--
0.7
0.75
1.0
1.0
pF
Current GainBandwidth Produc
(VCE = 5.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
MMBR571LT1
(VCE = 8.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
MRF5711LT1, MRF571
fT
--
--
8.0
8.0
--
--
GHz
FUNCTIONAL TESTS
Gain @ Noise Figure
MRF571
f = 0.5 GHz
(IC = 10 mAdc, VCE = 6.0 Vdc)
MRF571
f = 1.0 GHz
GNF
--
10
16.5
12
--
--
dB
Noise Figure
MRF571
f = 0.5 GHz
(IC = 10 mAdc, VCE = 6.0 Vdc)
MRF571
f = 1.0 GHz
f = 2.0 GHz
NF
--
--
--
1.0
1.5
2.8
--
2.0
--
dB
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBR571LT1
f = 0.5 GHz
f = 1.0 GHz
(IC = 10 mA, VCE = 6.0 Vdc)
MRF5711LT1
f = 1.0 GHz
GNF
--
--
--
16.5
10.5
13.5
--
--
--
dB
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBR571LT1
f = 0.5 GHz
f = 1.0 GHz
(IC = 10 mAdc, VCE = 6.0 Vdc)
MRF5711LT1
f = 1.0 GHz
NF
--
--
--
2.0
2.6
2.2
--
--
--
dB
Noise Figure
(VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
MRF5711LT1
NFmin
--
1.6
--
dB
Power Gain in 50
System (VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
MRF5711LT1
|S21|2
9.0
10
--
dB
Figure 1. Maximum Available Gain
versus Frequency
Figure 2. Current GainBandwidth versus
Collector Current @ 1.0 GHz
25
20
15
10
5
0
0.4
0.6
1
2
3
f, FREQUENCY (GHz)
G
A
MAX, MAXIMUM
A
V
AILABLE GAIN (dB)
VCE = 5 V
IC = 30 mA
GAMAX
+
|S21|
|S12|
(k
"
(k2
1) ), k
w
1
10
8
6
4
2
0
0
IC, COLLECTOR CURRENT (mA)
f T
, CURRENT
GAIN-BANDWIDTH PRODUCT
(GHz)
10
20
30
40
50
60
70
80
90
100
VCE = 5 V
f = 1 GHz
TYPICAL CHARACTERISTICS
MMBR571LT1
3
MMBR571LT1 MRF571 MRF5711LT1
MOTOROLA RF DEVICE DATA
Figure 3. Input Capacitance versus
Emitter Base Voltage
SOT23 MMBR571LT1
SOT23 MMBR571LT1
SOT23 MMBR571LT1
C
ib
, INPUT
CAP
ACIT
ANCE
(pF)
VBE, BASEEMITTER VOLTAGE (Vdc)
4
1
3
2
1
2
3
0
0
f = 1 MHz
Cib
C
cb
, OUTPUT
CAP
ACIT
ANCES
(pF)
, C
ob
Vcb, COLLECTORBASE VOLTAGE (Vdc)
2.5
0
2
1.5
1
0.5
0
1
2
3
4
5
6
7
8
9
10
Cob
Ccb
f = 1 MHz
G
NF
,
GAIN
A
T
NOISE FIGURE (dB)
0
IC, COLLECTOR CURRENT (mA)
20
16
12
8
4
0
10
20
30
40
50
f = 500 MHz
VCE = 5 V
TYPICAL CHARACTERISTICS
MMBR571LT1
Figure 4. Output Capacitances versus
CollectorBase Voltage
Figure 5. Gain at Noise Figure versus
Collector Current
1 GHz
Figure 6. Noise Figure versus Collector Current
SOT23 MMBR571LT1
SOT23 MMBR571LT1
SOT23 MMBR571LT1
NF
, NOISE FIGURE (dB)
0
IC, COLLECTOR CURRENT (mA)
5
4
3
2
1
0
10
20
30
40
50
f = 500 MHz
f = 1 GHz
VCE = 5 V
G
NF
,
GAIN
A
T
NOISE FIGURE (dB)
0.2
f, FREQUENCY (GHz)
25
20
15
10
5
0
0.3
0.5
1
1.5
2
NF
, NOISE FIGURE (dB)
5
4
3
2
1
0
VCE = 5 V
IC = 10 mA
GNF
NF
25
0.2
f, FREQUENCY (GHz)
20
15
10
5
0.3
0.6
1
2
30
1.5
GUMAX =
|S21|2
(1 |S11|2)(1 |S22|2)
GUMAX
|S21|2
VCE = 5 V
IC = 30 mA
G
U
MAX AND
|S
21
|2
(dB)
Figure 7. Gain at Noise Figure and Noise
Figure versus Frequency
Figure 8. Maximum Unilateral Gain and
Insertion Gain versus Frequency
MMBR571LT1 MRF571 MRF5711LT1
4
MOTOROLA RF DEVICE DATA
Figure 9. CollectorBase Capacitance
versus CollectorBase Voltage
Figure 10. 50
W
Noise Figure
versus Frequency
Figure 11. Functional Circuit Schematic
*BIAS
TEE
**SLUG TUNER
*BIAS
TEE
**SLUG TUNER
RF OUTPUT
RF INPUT
VBE
VCE = 6 Vdc
*
D.U.T.
**MICROLAB/FXR
**
SF -- 11N < 1 GHz
**
SF -- 31N > 1 GHz
C
cb
, COLLECT
OR-BASE
CAP
ACIT
ANCE
(pF)
2
1.6
1.2
0.8
0.4
0
10
8
6
4
2
0
Vcb, COLLECTORBASE VOLTAGE (VOLTS)
0.15
f, FREQUENCY (GHz)
0.2
0.5
1
2
NF
, NOISE FIGURE (dB)
5
4
3
2
1
0
f = 1 MHz
NF
VCE = 6 Vdc
IC = 5 mA
CKT = HP 11608A
Zo = 50
S =
L = 0
*MICROLAB
*
HWXXN
*
AS APPLICABLE
TYPICAL CHARACTERISTICS
MRF5711LT1
5
MMBR571LT1 MRF571 MRF5711LT1
MOTOROLA RF DEVICE DATA
GNF
Figure 12. Gain and Noise Figure
versus Frequency
Figure 13. Gain and Noise Figure
versus Collector Current
Figure 14. Gain and Noise Figure
versus Collector Current
Figure 15. Gain Bandwidth Product
versus Collector Current
Figure 16. GUmax and |S21|2
versus Frequency
Figure 17. Insertion Gain versus
Collector Current
G
NF
, GAIN (dB)
40
32
0.15
f, FREQUENCY (GHz)
0.2
0.5
1
2
NF
, NOISE FIGURE (dB)
5
4
3
2
1
0
24
16
8
0
GNF
NF
VCE = 6 Vdc
IC = 5 mA
CKT = FIGURE 3
G
NF
, GAIN (dB)
16
IC, COLLECTOR CURRENT (mA)
0
NF
, NOISE FIGURE (dB)
4
3
2
1
12
8
4
0
10
20
30
40
50
GNF
NF
VCE = 6 Vdc
f = 1 GHz
CKT = FIGURE 3
G
NF
, GAIN (dB)
IC, COLLECTOR CURRENT (mA)
0
NF
, NOISE FIGURE (dB)
4
3
2
1
24
10
20
30
40
50
18
12
6
0
VCE = 6 Vdc
f = 500 MHz
CKT = FIGURE 3
NF
f
,
GAIN BANDWIDTH PRODUCT
(GHz)
T
IC, COLLECTOR CURRENT (mA)
0
10
8
4
0
20
60
40
80
100
6
2
f = 1 GHz
VCE = 8 Vdc
Zo = 50
40
32
0.15
f, FREQUENCY (GHz)
0.2
0.5
1
2
24
16
8
0
|S
21
|2
, GAIN (dB)
G
Umax
AND
GUmax =
|S21|2
(1 |S11|2)(1 |S22|2)
GUmax
|S21|2
VCE = 8 Vdc
IC = 50 mA
Zo = 50
|S
21
|2
, INSER
TION GAIN (dB)
32
24
16
8
0
IC, COLLECTOR CURRENT (mA)
0
10
20
30
40
50
Zo = 50
VCE = 6 Vdc
f = 200 MHz
1 GHz
500 MHz
TYPICAL CHARACTERISTICS
MRF5711LT1
2 GHz
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