21
MMBR901LT1, T3 MRF9011LT1
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
High-Frequency Transistor
Designed primarily for use in highgain, lownoise smallsignal amplifiers for
operation up to 2.5 GHz. Also usable in applications requiring fast switching
times.
High CurrentGain -- Bandwidth Product
Low Noise Figure @ f = 1.0 GHz --
NF(matched) = 1.8 dB (Typ) (MRF9011LT1)
NF(matched)
= 1.9 dB (Typ) (MMBR901LT1, T3)
High Power Gain --
Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)
Gpe(matched)
= 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)
Guaranteed RF Parameters (MRF9011LT1)
Surface Mounted SOT23 & SOT143 Offer Improved RF Performance
Lower Package Parasitics
High Gain
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
15
Vdc
CollectorBase Voltage
VCBO
25
Vdc
EmitterBase Voltage
VEBO
2.0
Vdc
Collector Current -- Continuous
IC
30
mAdc
Power Dissipation @ TC = 75
C (1)
MMBR901LT1, T3;
MRF9011LT1
Derate above 25
C
PD(max)
0.300
4.00
Watt
mW/
C
Storage Temperature Range
All
Tstg
55 to +150
C
Maximum Junction Temperature
TJ(max)
150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Storage Temperature
Tstg
150
C
Thermal Resistance, Junction to Case
MRF9011LT1, MMBR901LT1, T3
R
JC
200
C/W
DEVICE MARKING
MRF9011LT1 = 01
MMBR901LT1, T3 = 7A
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MMBR901LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBR901LT1, T3
MRF9011LT1
IC = 30 mA
SURFACE MOUNTED
HIGHFREQUENCY
TRANSISTOR
NPN SILICON
CASE 318A05, STYLE 1
SOT143
LOW PROFILE, MRF9011LT1
CASE 31808, STYLE 6
SOT23
LOW PROFILE, MMBR901LT1, T3
Motorola, Inc. 1997
REV 8
MMBR901LT1, T3 MRF9011LT1
22
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
15
--
--
Vdc
CollectorBase Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
25
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
2.0
--
--
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
--
--
50
nAdc
ON CHARACTERISTICS
DC Current Gain
MMBR901LT1, T3
(IC = 5.0 mAdc, VCE = 5.0 Vdc)
MRF9011LT1
hFE
50
30
--
80
200
200
--
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
MRF9011LT1
(IC = 15 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
fT
--
3.8
--
GHz
CollectorBase Capacitance
MRF9011LT1
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
--
0.55
1.0
pF
FUNCTIONAL TESTS
Power Gain at Minimum Noise Figure
MRF9011LT1
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
GNFmin
--
13.5
--
dB
Minimum Noise Figure (Figure 3)
MRF9011LT1
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
NFmin
--
1.8
--
dB
Insertion Gain in 50
System
MRF9011LT1
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
S21
2
9.0
10.2
--
dB
Minimum Noise Figure (Figure 3)
(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1.0 GHz)
MMBR901LT1, T3
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
NFmin
--
1.9
--
dB
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
MMBR901LT1
Cobo
--
--
1.0
pF
CommonEmitter Amplifier Gain
(VCC = 6.0 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
MMBR901LT1
Gpe
--
12
--
dB
23
MMBR901LT1, T3 MRF9011LT1
MOTOROLA RF DEVICE DATA
Figure 1. CollectorBase Capacitance
versus CollectorBase Voltage
Figure 2. Gain and Noise Figure
versus Collector Current
Figure 3. MRF9011LT1 Functional Circuit Schematic
2
1.6
1.2
0.8
0.4
0
16
12
8
4
0
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
14
16
0
3
6
9
12
15
18
21
30
24
27
VCB, COLLECTORBASE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
VBE
D.U.T.
RF INPUT
RF OUTPUT
**SLUG TUNER
**SLUG TUNER
*BIAS
TEE
*BIAS
TEE
**MICROLAB/FXR
**
SF11N FOR f < 1 GHz
**
SF31N FOR f > 1 GHz
VCE
f = 1 MHz
VCE = 10 Vdc
f = 1 GHz
S =
L = 0
Zo = 50 OHMS
CIRCUIT USED IS HP 11608A
C
cb
, COLLECT
OR-BASE
CAP
ACIT
ANCE
(pF)
G
NF
, GAIN (dB)
NF
, NOISE FIGURE (dB)
GNF
NF
MRF9011LT1
MMBR901LT1, T3 MRF9011LT1
24
MOTOROLA RF DEVICE DATA
NF
, NOISE FIGURE (dB)
NF
, NOISE FIGURE (dB)
Figure 4. Gain and Noise Figure
versus Frequency
Figure 5. Gain and Noise Figure
versus Collector Current
Figure 6. GainBandwidth Product versus
Collector Current
Figure 7. Insertion Gain versus Frequency
Figure 8. Maximum Unilateral Gain
versus Frequency
G
NF
, GAIN (dB)
G
Umax
, MAXIMUM UNILA
TERAL
GAIN
(dB)
|S
21
|2
, INSER
TION GAIN (dB)
16
12
8
4
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12
15
18
21
30
24
27
IC, COLLECTOR CURRENT (mA)
VCE = 10 Vdc
f = 1 GHz
CIRCUIT USED -- SEE FIGURE 3
G
NF
, GAIN (dB)
GNF
NF
0
0
1
2
3
4
5
0
6
12
18
30
24
IC, COLLECTOR CURRENT (mA)
VCE = 10 Vdc
Zo = 50 OHMS
32
24
16
8
0
0.1
40
VCE = 10 Vdc
IC = 5 mA
GNF
NF
f, FREQUENCY (GHz)
VCE = 10 Vdc
Zo = 50 OHMS
IC = 5 mA
VCE = 10 Vdc
Zo = 50 OHMS
IC = 5 mA
24
18
12
6
0
0.1
30
0.2 0.3
0.5
1
2
3
40
30
20
10
0
0.1
50
0.2 0.3
0.5
1
2
3
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
, GAIN-BANDWIDTH PRODUCT
(GHz)
F
(1 |S11|2)(1 |S22|2)
|S21|2
GUmax =
0.2
0.5
1
2
4
3
2
1
5
CIRCUIT USED -- SEE FIGURE 3
MRF9011LT1
25
MMBR901LT1, T3 MRF9011LT1
MOTOROLA RF DEVICE DATA
VCE
IC
f
S11
S21
S12
S22
VCE
(Vdc)
IC
(mA)
f
(MHz)
|S11|
|S21|
|S12|
|S22|
5.0
5.0
100
200
500
1000
2000
0.85
0.78
0.71
0.66
0.60
41
76
131
169
152
13.64
10.77
6.10
3.22
1.65
153
134
102
77
47
0.03
0.05
0.08
0.08
0.11
65
54
35
33
46
0.93
0.80
0.55
0.45
0.47
17
29
42
48
63
10
100
200
500
1000
2000
0.72
0.70
0.66
0.63
0.58
59
100
150
179
147
20.01
14.31
7.03
3.57
1.79
145
123
94
73
46
0.03
0.04
0.06
0.07
0.11
62
49
38
45
57
0.87
0.67
0.44
0.37
0.41
23
36
43
46
60
15
100
200
500
1000
2000
0.65
0.66
0.65
0.63
0.59
75
118
159
174
144
23.44
15.56
7.10
3.57
1.77
138
116
90
71
45
0.02
0.04
0.05
0.06
0.11
57
46
42
52
62
0.81
0.59
0.40
0.35
0.40
27
38
40
43
58
20
100
200
500
1000
2000
0.61
0.66
0.66
0.65
0.61
89
130
166
171
143
24.32
15.11
6.68
3.32
1.65
133
111
88
69
43
0.02
0.03
0.04
0.06
0.10
51
43
46
56
65
0.77
0.55
0.41
0.39
0.44
28
35
34
39
56
30
100
200
500
1000
2000
0.63
0.68
0.69
0.70
0.66
132
157
177
165
138
13.18
7.07
3.23
1.78
0.93
118
104
90
71
42
0.02
0.02
0.03
0.05
0.09
47
44
55
65
79
0.72
0.66
0.62
0.59
0.62
15
16
24
38
62
10
5.0
100
200
500
1000
2000
0.85
0.80
0.70
0.65
0.58
38
71
126
166
154
13.67
10.97
6.35
3.39
1.74
155
136
104
78
48
0.03
0.05
0.07
0.07
0.10
70
56
37
36
50
0.93
0.83
0.60
0.51
0.54
14
24
35
40
55
10
100
200
500
1000
2000
0.75
0.71
0.65
0.62
0.57
55
94
145
177
149
20.12
14.60
7.33
3.74
1.88
147
125
96
74
47
0.02
0.04
0.05
0.06
0.10
66
50
39
46
60
0.88
0.72
0.50
0.45
0.49
19
30
35
38
53
15
100
200
500
1000
2000
0.68
0.67
0.64
0.62
0.58
68
110
155
177
146
23.53
15.90
7.45
3.74
1.90
140
119
92
71
45
0.02
0.03
0.04
0.06
0.09
61
49
42
53
65
0.85
0.65
0.47
0.44
0.50
22
31
32
35
51
20
100
200
500
1000
2000
0.64
0.64
0.64
0.62
0.59
79
122
161
174
145
24.77
15.81
7.10
3.53
1.75
135
114
89
79
44
0.02
0.03
0.04
0.05
0.09
56
46
46
56
68
0.81
0.62
0.48
0.46
0.53
23
29
28
33
50
30
100
200
500
1000
2000
0.61
0.63
0.65
0.66
0.63
114
147
172
168
140
16.25
9.10
4.22
2.27
1.15
123
107
90
71
41
0.01
0.02
0.03
0.05
0.08
48
49
53
63
79
0.79
0.71
0.66
0.63
0.67
15
15
22
33
53
Table 1. MRF9011LT1 Common Emitter SParameters
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