www.docs.chipfind.ru
1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Darlington Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
40
Vdc
Collector Base Voltage
VCBO
40
Vdc
Emitter Base Voltage
VEBO
12
Vdc
Collector Current -- Continuous
IC
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(1)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
556
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
C
Derate above 25
C
PD
300
2.4
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
417
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
DEVICE MARKING
MMBT6427LT1 = 1V
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V(BR)CEO
40
--
Vdc
Collector Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
V(BR)CBO
40
--
Vdc
Emitter Base Breakdown Voltage
(IC = 10
m
Adc, IC = 0)
V(BR)EBO
12
--
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES
--
1.0
Adc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
--
50
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
--
50
nAdc
1. FR 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT6427LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBT6427LT1
Motorola Preferred Device
1
2
3
CASE 318 08, STYLE 6
SOT 23 (TO 236AB)
Motorola, Inc. 1996
COLLECTOR 3
BASE
1
EMITTER 2
MMBT6427LT1
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
hFE
10,000
20,000
14,000
100,000
200,000
140,000
--
Collector Emitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc)
VCE(sat)(3)
--
--
1.2
1.5
Vdc
Base Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VBE(sat)
--
2.0
Vdc
Base Emitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc)
VBE(on)
--
1.75
Vdc
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
7.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
--
15
pF
Current Gain -- High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
|hfe|
1.3
--
Vdc
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 k
, f = 1.0 kHz)
NF
--
10
dB
3. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
MMBT6427LT1
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25
C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (k
)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (k
)
5.0
50
70
100
200
30
10
20
1.0
10
10
20
50 100 200
500
1 k 2 k
5 k 10 k 20 k
50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS
0
IC = 1.0 mA
100
A
10
A
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100
A
10
A
e
n
, NOISE VOL
T
AGE (nV)
i n
, NOISE CURRENT
(pA)
2.0
5.0
10
20
50
100
200
500
100
0
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10
A
100
A
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0
2.0
5.0
10
20
50
100
200
500
100
0
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10
A
100
A
IC = 1.0 mA
V
T
,
T
OT
AL
WIDEBAND NOISE VOL
T
AGE (nV)
NF
, NOISE FIGURE (dB)
10
20
50 100 200
500
1 k 2 k
5 k 10 k 20 k
50 k 100 k
MMBT6427LT1
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
SMALLSIGNAL CHARACTERISTICS
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (
A)
2.0
200 k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25
C
C, CAP
ACIT
ANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|h
fe
|, SMALLSIGNAL
CURRENT
GAIN
h
FE
, DC CURRENT
GAIN
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
Cibo
Cobo
0.5
1.0
2.0
0.5
10
20
50
100 200
500
VCE = 5.0 V
f = 100 MHz
TJ = 25
C
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
7.0
10
20
30
50 70
100
200 300
500
TJ = 125
C
25
C
55
C
VCE = 5.0 V
0.1 0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
500 1000
TJ = 25
C
IC = 10 mA
50 mA
250 mA
500 mA
Figure 10. "On" Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
1.0
V
, VOL
T
AGE (VOL
TS)
1.4
1.2
1.0
0.8
0.6
7.0
10
20
30
50 70 100 200 300
500
VBE(sat) @ IC/IB = 1000
R
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
TJ = 25
C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
2.0
3.0
4.0
5.0
6.0
5.0 7.0 10
20
30
50
70 100
200 300
500
25
C TO 125
C
55
C TO 25
C
*R
q
VC FOR VCE(sat)
q
VB FOR VBE
25
C TO 125
C
55
C TO 25
C
*APPLIES FOR IC/IB
hFE/3.0
MMBT6427LT1
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 12. Thermal Response
t, TIME (ms)
1.0
r(t),
TRANSIENT
THERMAL
2.0
5.0
1.0
0.5
0.2
0.1
RESIST
ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k
10 k
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
Z
JC(t) = r(t)
R
JC
TJ(pk) TC = P(pk) Z
JC(t)
Z
JA(t) = r(t)
R
JA
TJ(pk) TA = P(pk) Z
JA(t)
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PP
PP
t1
1/f
DUTY CYCLE
+
t1 f
+
t1
tP
PEAK PULSE POWER = PP
PDF 
ZIP