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1
Motorola TMOS Product Preview Data
Designer's
TM
Data Sheet
FETKY
TM
MOSFET and Schottky Rectifier
The FETKY
TM
product family incorporates low RDS(on), true logic level MOSFETs
packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers
to offer high efficiency components in a space saving configuration. Independent pinouts
for TMOS and Schottky die allow the flexibility to use a single component for switching
and rectification functions in a wide variety of applications such as Buck Converter,
BuckBoost, Synchronous Rectification, Low Voltage Motor Control, and Load Manage-
ment in Battery Packs, Chargers, Cell Phones and other Portable Products.
HDTMOS Power MOSFET with Low VF, Low IR Schottky Rectifier
Lower Component Placement and Inventory Costs along with
Board Space Savings
Logic Level Gate Drive -- Can be Driven by Logic ICs
Mounting Information for SO8 Package Provided
IDSS Specified at Elevated Temperature
Applications Information Provided
MOSFET MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted) (1)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
20
Vdc
DraintoGate Voltage (RGS = 1.0 M
W
)
VDGR
20
Vdc
GatetoSource Voltage -- Continuous
VGS
"
20
Vdc
Drain Current (3) -- Continuous @ TA = 25
C
-- Continuous @ TA = 100
C
-- Single Pulse (tp
v
10
m
s)
ID
ID
IDM
3.3
2.1
20
Adc
Apk
Total Power Dissipation @ TA = 25
C (2)
PD
2.0
Watts
Single Pulse DraintoSource Avalanche Energy -- STARTING TJ = 25
C
VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25
W
EAS
324
mJ
SCHOTTKY RECTIFIER MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM
VR
20
Volts
Average Forward Current (3) (Rated VR) TA = 100
C
IO
1.0
Amps
Peak Repetitive Forward Current (3) (Rated VR, Square Wave, 20 kHz) TA = 105
C
Ifrm
2.0
Amps
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Ifsm
20
Amps
DEVICE MARKING
ORDERING INFORMATION
2P102
Device
Reel Size
Tape Width
Quantity
2P102
MMDFS2P102R2
13
12 mm embossed tape
2500 units
(1) Negative sign for Pchannel device omitted for clarity.
(2) Pulse Test: Pulse Width
250
s, Duty Cycle
2.0%.
(3) Mounted on 2
square FR4 board (1
sq. 2 oz. Cu 0.06
thick single sided), 10 sec. max.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
HDTMOS and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
FETKY is a trademark of International Rectifier.
Order this document
by MMDFS2P102/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMDFS2P102
PChannel Power MOSFET
with Schottky Rectifier
20 Volts
RDS(on) = 0.16
W
VF = 0.39 Volts
CASE 75105, Style 18
(SO 8)
1
2
3
4
8
7
6
5
A
A
S
G
C
C
D
D
TOP VIEW
TM
Motorola, Inc. 1997
MMDFS2P102
2
Motorola TMOS Product Preview Data
THERMAL CHARACTERISTICS -- SCHOTTKY AND MOSFET
Thermal Resistance -- JunctiontoAmbient (1) -- MOSFET
R
q
JA
167
C/W
Thermal Resistance -- JunctiontoAmbient (2) -- MOSFET
R
q
JA
100
Thermal Resistance -- JunctiontoAmbient (3) -- MOSFET
R
q
JA
62.5
Thermal Resistance -- JunctiontoAmbient (1) -- Schottky
R
q
JA
204
Thermal Resistance -- JunctiontoAmbient (2) -- Schottky
R
q
JA
122
Thermal Resistance -- JunctiontoAmbient (3) -- Schottky
R
q
JA
83
Operating and Storage Temperature Range
Tj, Tstg
55 to 150
(1) Mounted with minimum recommended pad size, PC Board FR4.
(2) Mounted on 2
square FR4 board (1
sq. 2 oz. Cu 0.06
thick single sided), Steady State.
(3) Mounted on 2
square FR4 board (1
sq. 2 oz. Cu 0.06
thick single sided), 10 sec. max.
MMDFS2P102
3
Motorola TMOS Product Preview Data
MOSFET ELECTRICAL CHARACTERISTICS
(TJ = 25
C unless otherwise noted) (1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Voltage
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)
V(BR)DSS
20
--
--
25
--
--
Vdc
mV/
C
Zero Gate Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
C)
IDSS
--
--
--
--
1.0
10
Adc
Gate Body Leakage Current (VGS =
20 Vdc, VDS = 0)
IGSS
--
--
100
nAdc
ON CHARACTERISTICS (2)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
VGS(th)
1.0
--
1.5
4.0
2.0
--
Vdc
mV/
C
Static DrainSource Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
RDS(on)
--
--
0.118
0.152
0.160
0.180
Ohms
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
2.0
3.0
--
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
16 Vdc V
0 Vdc
Ciss
--
420
588
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
--
290
406
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
--
116
232
SWITCHING CHARACTERISTICS (3)
TurnOn Delay Time
(V
10 Vd
I
2 0 Ad
td(on)
--
19
38
ns
Rise Time
(VDS = 10 Vdc, ID = 2.0 Adc,
VGS = 4 5 Vdc
tr
--
66
132
TurnOff Delay Time
VGS = 4.5 Vdc,
RG = 6.0
)
td(off)
--
25
50
Fall Time
G
)
tf
--
37
74
Gate Charge
(V
16 Vd
I
2 0 Ad
QT
--
15
20
nC
(VDS = 16 Vdc, ID = 2.0 Adc,
Q1
--
1.2
--
( DS
, D
,
VGS = 10 Vdc)
Q2
--
5.0
--
Q3
--
4.0
--
DRAIN SOURCE DIODE CHARACTERISTICS
Forward OnVoltage (2)
(IS = 2.0 Adc,
VGS = 0 Vdc)
VSD
--
1.5
2.1
V
Reverse Recovery Time
(I
2 0 Ad
V
15 V
trr
--
38
--
ns
(IS = 2.0 Adc, VDD = 15 V,
ta
--
17
--
( S
,
DD
,
dIS/dt = 100 A/
s)
tb
--
21
--
Reverse Recovery Stored Charge
QRR
--
0.034
--
C
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS
(TJ = 25
C unless otherwise noted)
Maximum Instantaneous Forward Voltage (2)
I
1 0 A
VF
TJ = 25
C
TJ = 125
C
Volts
IF = 1.0 A
IF = 2.0 A
0.47
0.58
0.39
0.53
Maximum Instantaneous Reverse Current (2)
V
20 V
IR
TJ = 25
C
TJ = 125
C
mA
VR = 20 V
0.05
10
Maximum Voltage Rate of Change
VR = 20 V
dV/dt
10,000
V/
m
s
(1) Negative sign for Pchannel device omitted for clarity.
(2) Pulse Test: Pulse Width
300
sec, Duty Cycle
2.0%.
(3) Switching characteristics are independent of operating temperature.
MMDFS2P102
4
Motorola TMOS Product Preview Data
TYPICAL FET ELECTRICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus
GateToSource Voltage
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
1.2
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
4.0
3.0
2.0
VGS, GATETOSOURCE VOLTAGE (VOLTS)
3.5
1.0
3.0
2.0
1.0
0
8.0
10
0
VGS, GATETOSOURCE VOLTAGE (VOLTS)
0.6
0.4
0.3
0.2
0.1
0
ID, DRAIN CURRENT (AMPS)
0.5
0
0.20
0.16
0.12
0.08
0.04
1.0
25
25
50
TJ, JUNCTION TEMPERATURE (
C)
1.2
0.8
0.6
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
5.0
20
0
100
1.0
15
0
I D
, DRAIN CURRENT
(AMPS)
I
R
1.0
0
0.6
0.2
0.4
0.8
1.0
1.4
1.6
1.5
2.0
2.5
3.0
4.0
2.0
4.0
6.0
1.5
2.0
2.5
3.0
3.5
4.0
, DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
100
75
1.0
10
10
I DSS
, LEAKAGE (nA)
1.8
, DRAIN CURRENT
(AMPS)
D
, DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
DS(on)
0.5
R
,
DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
DS(on)
125
150
1.4
1.6
VGS = 10 V
ID = 2.0 A
VGS = 0 V
TJ = 125
C
100
C
TJ = 25
C
VGS = 4.5 V
10 V
TJ = 25
C
ID = 1.0 A
VDS
10 V
TJ = 55
C
100
C
25
C
TJ = 25
C
3.1 V
VGS = 2.4 V
10 V
4.5 V
3.8 V
MMDFS2P102
5
Motorola TMOS Product Preview Data
TYPICAL FET ELECTRICAL CHARACTERISTICS
Mounted on 2
sq. FR4 board (1
sq. 2 oz. Cu 0.06
thick single sided) with one die operating, 10 s max.
Figure 7. Capacitance Variation
Figure 8. GateToSource and
DrainToSource Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
5.0
20
10
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
1200
800
1000
600
QG, TOTAL GATE CHARGE (nC)
16
0
6.0
4.0
2.0
0
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
0.5
2.0
1.6
1.2
0.8
0.4
0
0.7
0.1
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
0.1
0.01
TJ, STARTING JUNCTION TEMPERATURE (
C)
50
150
25
350
300
50
0
1.0
C, CAP
ACIT
ANCE
(pF)
V
400
200
0
5.0
0
10
4.0
8.0
12
12
10
0.9
1.1
1.3
1.5
, DRAIN CURRENT
(AMPS)
I D
10
1.0
75
100
125
100
E
AS
, SINGLE PULSE DRAINT
OSOURCE
15
, GA
TET
OSOURCE
VOL
T
AGE
(VOL
TS)
GS
t, TIME
(ns)
I
,
SOURCE CURRENT
(AMPS)
S
100
10
100
10
8.0
150
200
250
A
V
ALANCHE ENERGY
(mJ)
ID = 6.0 A
VDS = 0 VGS = 0
TJ = 25
C
VGS = 0 V
TJ = 25
C
Ciss
Ciss
Coss
Crss
Crss
ID = 2.0 A
TJ = 25
C
VDS
VGS
QT
Q2
Q1
Q3
td(off)
td(on)
tr
tf
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
10 ms
1.0 ms
100
m
s
10
m
s
VGS = 20 V
SINGLE PULSE
TC = 25
C
VGS
VDS
0
18
16
14
12
10
8.0
6.0
4.0
2.0
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