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Электронный компонент: MR760

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1
Rectifier Device Data
Designer's
TM
Data Sheet
High Current Lead Mounted
Rectifiers
Current Capacity Comparable to Chassis Mounted Rectifiers
Very High Surge Capacity
Insulated Case
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 2.5 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Lead is
Readily Solderable
Lead Temperature for Soldering Purposes: 260
C Max. for 10 Seconds
Polarity: Cathode Polarity Band
Shipped 1000 units per plastic bag. Available Tape and Reeled, 800 units
per reel by adding a "RL'' suffix to the part number
Marking: R750, R751, R752, R754, R758, R760
MAXIMUM RATINGS
Characteristic
Symbol
MR750
MR751
MR752
MR754
MR756
MR758
MR760
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
Volts
NonRepetitive Peak Reverse Voltage
(Halfwave, single phase, 60 Hz peak)
VRSM
60
120
240
480
720
960
1200
Volts
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
Volts
Average Rectified Forward Current
(Single phase, resistive load, 60 Hz)
See Figures 5 and 6
IO
22 (TL = 60
C, 1/8
Lead Lengths)
6.0 (TA = 60
C, P.C. Board mounting)
Amps
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions)
IFSM
400 (for 1 cycle)
Amps
Operating and Storage Junction
Temperature Range
TJ, Tstg
*
65 to +175
C
ELECTRICAL CHARACTERISTICS
Characteristic and Conditions
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage Drop
(iF = 100 Amps, TJ = 25
C)
vF
1.25
Volts
Maximum Forward Voltage Drop
(IF = 6.0 Amps, TA = 25
C, 3/8
leads)
VF
0.90
Volts
Maximum Reverse Current
TJ = 25
C
(Rated dc Voltage)
TJ = 100
C
IR
25
1.0
A
mA
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by MR750/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MR750
MR751
MR752
MR754
MR756
MR758
MR760
HIGH CURRENT
LEAD MOUNTED
SILICON RECTIFIERS
501000 VOLTS
DIFFUSED JUNCTION
CASE 19404
MR754 and MR760 are
Motorola Preferred Devices
Rev 2
MR750 MR751 MR752 MR754 MR756 MR758 MR760
2
Rectifier Device Data
Figure 1. Forward Voltage
Figure 2. Maximum Surge Capability
Figure 3. Forward Voltage Temperature Coefficient
Figure 4. Typical Transient Thermal Resistance
1.8
2.4
0.6
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
700
500
20
50
10
i F
, INST
ANT
ANEOUS
FOR
W
ARD
CURRENT

(AMP)
5.0
2.0
1.0
1.2
0.8
1.0
1.4
1.6
2.0
2.2
2.6
7.0
100
70
0.2
0.5
0.7
200
30
3.0
0.3
300
MAXIMUM
TYPICAL
TJ = 25
C
NUMBER OF CYCLES AT 60 Hz
100
1.0
300
100
80
60
I
2.0
5.0
10
20
50
200
400
600
, PEAK HALF W
A
VE
CURRENT

(AMP)
FSM
TJ = 175
C
25
C
VRRM MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE TJ
NOTED IS TJ PRIOR TO SURGE
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
1.0
0.2
+0.5
0
0.5
1.0
1.5
2.0
2.0
COEFFICIENT
(mV/ C)
10
20
100
200
0.5
5.0
50
TYPICAL RANGE
t, TIME (SECONDS)
1.0
10
1.0
0.2
2.0
5.0
10
20
50
5.0
20
R
3.0
2.0
0.5
0.3
0.1
0.2
0.3
0.5
0.7
3.0
30
7.0
70
Both leads to heat sink, with lengths as shown. Variations in R
q
JL(t)
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about
20% from the values shown. Values
for times greater than 2.0 seconds may be obtained by drawing a
curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
typical or maximum values may be used. For R
q
JL(t) values at pulse
widths less than 0.1 second, the above curve can be extrapolated
down to 10
s at a continuing slope.
THERMAL
RESIST
ANCE ( C/W)
175
C
25
C
1/2"
3/8"
1/4"
1/8"
, JUNCTIONT
OLEAD
TRANSIENT
JL(t)
HEAT SINK
L
L
MR750 MR751 MR752 MR754 MR756 MR758 MR760
3
Rectifier Device Data
Figure 5. Maximum Current Ratings
TL, LEAD TEMPERATURE (
C)
0
8.0
I F(A
V)
0
12
20
28
40
80
120
160
200
Figure 6. Maximum Current Ratings
0
8.0
4.0
0
16
24
32
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
P
F(A
V)
Figure 7. Power Dissipation
, POWER DISSIP
A
TION (W
A
TTS)
5/8"
, A
VERAGE
FOR
W
ARD
CURRENT

(AMPS)
CAPACITANCE LOADS
8.0
12
16
RESISTIVE INDUCTIVE
LOADS
TA, AMBIENT TEMPERATURE (
C)
0
1.0
I F(A
V)
0
2.0
3.0
4.0
40
80
120
160
200
Figure 8. Steady State Thermal Resistance
f = 60 Hz
, A
VERAGE
FOR
W
ARD
CURRENT

(AMPS)
RESISTIVE INDUCTIVE LOADS
CAPACITANCE LOADS 1
F
& 3
F
20
6
F
1
F
& 3
F
20 Iavg
TA(A)
TA(K)
TL(A)
TC(A)
TJ
TC(K)
TL(K)
PF
R
S(A)
R
L(A)
R
J(A)
R
J(K)
R
L(K)
R
S(K)
Use of the above model permits junction to lead thermal resistance for
any mounting configuration to be found. Lowest values occur when one
side of the rectifier is brought as close as possible to the heat sink as
shown below. Terms in the model signify:
TA = Ambient Temperature
TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
R
q
S = Thermal Resistance, Heat Sink to Ambient
R
q
L = Thermal Resistance, Lead to Heat Sink
R
q
J = Thermal Resistance, Junction to Case
PF = Power Dissipation
(Subscripts A and K refer to anode and cathode sides, respectively.)
Values for thermal resistance components are:
R
q
L = 40
C/W/in. Typically and 44
C/W/in Maximum.
R
q
J = 2
C/W typically and 4
C/W Maximum.
Since R
q
J is so low, measurements of the case temperature, TC, will be
approximately equal to junction temperature in practical lead mounted
applications. When used as a 60 Hz rectifierm the slow thermal response
holds TJ(PK) close to TJ(AVG). Therefore maximum lead temperature may
be found from: TL = 175
R
JL PF. PF may be found from Figure 7.
The recommended method of mounting to a P.C. board is shown on the
sketch, where R
JA is approximately 25
C/W for a 11/2" x 11/2" copper
surface area. Values of 40
C/W are typical for mounting to terminal strips
or P.C. boards where available surface area is small.
Board Ground Plane
Recommended mounting for half wave circuit
24
28
32
0
1/4
5.0
0
1/2
3/4
1.0
L, LEAD LENGTH (INCHES)
R
JL
, THERMAL

RESIST
ANCE,
SINGLE LEAD TO HEAT SINK,
INSIGNIFICANT HEAT FLOW
THROUGH OTHER LEAD
10
15
20
25
30
35
40
24
16
4.0
20
60
100
140
180
4.0
12
20
28
1/8
3/8
5/8
7/8
JUNCTIONT
OLEAD( C/W)
BOTH LEADS TO HEAT
SINK WITH LENGTHS
AS SHOWN
3/8"
1/4"
L = 1/8"
20
60
100
140
180
5.0
6.0
7.0
I(pk) = 5 Iavg
I(pk) = 10 Iavg
I(pk) = 20 Iavg
10 Iavg
I(pk) = 5 Iavg
RESISTIVE INDUCTIVE LOADS
BOTH LEADS TO HEAT
SINK, EQUAL LENGTH
6
F
(IPK/IAVE = 6.28)
SEE NOTE
R
JA = 40
C/W
SEE NOTE
R
JA = 25
C/W
NOTES
THERMAL CIRCUIT MODEL
(For Heat Conduction Through The Leads)
MR750 MR751 MR752 MR754 MR756 MR758 MR760
4
Rectifier Device Data
Figure 9. Rectification Efficiency
Figure 10. Reverse Recovery Time
REPETITION FREQUENCY (kHz)
2.0
1.0
100
50
30
20
70
3.0
5.0
100
RELA
TIVE EFFICIENCY

(%)
70
7.0 10
20
30
50
TJ = 25
C
CURRENT INPUT WAVEFORM
IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
0.2
0.1
20
7.0
5.0
2.0
1.0
7.0
0.3
0.5
10
3.0
t rr
,
REVERSE
RECOVER
Y

TIME ( s)
m
10
0.7 1.0
2.0
3.0
5.0
TJ = 25
C
IF = 5 A
3 A
1 A
IF
0
IR
trr
Figure 11. Junction Capacitance
Figure 12. Forward Recovery Time
VR, REVERSE VOLTAGE (VOLTS)
1.0
3.0
500
300
200
100
70
50
2.0
C, CAP
ACIT
ANCE
(pF)
10
20
100
7.0
5.0
50
30
TJ = 25
C
1.0
IF, FORWARD PULSE CURRENT (AMP)
0.7
0.5
0.3
0.2
0.1
2.0
, FOR
W
ARD
RECOVER
Y

TIME ( s)
t fr
5.0
3.0
1.0
7.0
10
m
u
fr = 1.0 V
TJ = 25
C
u
fr
u
f
tfr
TJ = 175
C
30
700
1000
30
20
10
70
u
fr = 2.0 V
RS
RL
VO
Figure 13. SinglePhase HalfWave
Rectifier Circuit
The rectification efficiency factor
shown in Figure 9 was
calculated using the formula:
+
P
(dc)
P
(rms)
+
V
2
o
(dc)
R
L
V
2
o
(rms)
R
L
.100%
+
V
2
o
(dc)
V
2
o
(
ac)
)
V
2
o
(dc)
.100%
(1)
For a sine wave input Vm sin (wt) to the diode, assumed
lossless, the maximum theoretical efficiency factor becomes:
(sine)
+
V
2m
p
2
R
L
V
2m
4R
L
.100%
+
4
2
.100%
+
40.6%
(2)
For a square wave input of amplitude Vm, the efficiency
factor becomes:
(square)
+
V
2m
2
R
L
V
2m
R
L
.100%
+
50%
(3)
(A full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the re-
verse recovery time of the diode (Figure 10) becomes signifi-
cant, resulting in an increasing ac voltage component across
RL which is opposite in polarity to the forward current, there-
by reducing the value of the efficiency factor
, as shown on
Figure 9.
It should be emphasized that Figure 9 shows waveform ef-
ficiency only; it does not provide a measure of diode losses.
Data was obtained by measuring the ac component of Vo
with a true rms ac voltmeter and the dc component with a dc
voltmeter. The data was used in Equation 1 to obtain points
for Figure 9.
MR750 MR751 MR752 MR754 MR756 MR758 MR760
5
Rectifier Device Data
PACKAGE DIMENSIONS
CASE 19404
ISSUE F
NOTES:
1. CATHODE SYMBOL ON PACKAGE.
STYLE 1:
PIN 1. CATHODE
2. ANODE
A
K
B
K
2
1
D
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
8.43
8.69
0.332
0.342
B
5.94
6.25
0.234
0.246
D
1.27
1.35
0.050
0.053
E
25.15
25.65
0.990
1.010