1
MRF141
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
NChannel EnhancementMode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
Guaranteed Performance at 30 MHz, 28 V:
Output Power -- 150 W
Gain -- 18 dB (22 dB Typ)
Efficiency -- 40%
Typical Performance at 175 MHz, 50 V:
Output Power -- 150 W
Gain -- 13 dB
Low Thermal Resistance
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
65
Vdc
DrainGate Voltage
VDGO
65
Vdc
GateSource Voltage
VGS
40
Vdc
Drain Current -- Continuous
ID
16
Adc
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
300
1.71
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
Operating Junction Temperature
TJ
200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.6
C/W
NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF141/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF141
150 W, 28 V, 175 MHz
NCHANNEL
BROADBAND
RF POWER MOSFET
CASE 21111, STYLE 2
Motorola, Inc. 1997
D
G
S
REV 8
MRF141
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
DrainSource Breakdown Voltage (VGS = 0, ID = 100 mA)
V(BR)DSS
65
--
--
Vdc
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
IDSS
--
--
5.0
mAdc
GateBody Leakage Current (VGS = 20 V, VDS = 0)
IGSS
--
--
1.0
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0
Vdc
DrainSource OnVoltage (VGS = 10 V, ID = 10 A)
VDS(on)
0.1
0.9
1.5
Vdc
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
gfs
5.0
7.0
--
mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
--
350
--
pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
--
420
--
pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
--
35
--
pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain, f = 30; 30.001 MHz
(VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 175 MHz
Gps
16
--
20
10
--
--
dB
Drain Efficiency
(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, ID (Max) = 5.95 A)
40
45
--
%
Intermodulation Distortion (1)
(VDD = 28 V, Pout = 150 W (PEP), f = 30 MHz,
f2 = 30.001 MHz, IDQ = 250 mA)
IMD(d3)
IMD(d11)
--
--
30
60
28
--
dB
Load Mismatch
(VDD = 28 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 28 V, Pout = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 4.0 A)
GPS
IMD(d3)
IMD(d9 13)
--
--
--
23
50
75
--
--
--
dB
NOTE:
1. To MILSTD1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
Figure 1. 30 MHz Test Circuit (Class AB)
C2, C5, C6, C7, C8, C9 -- 0.1
F Ceramic Chip or
Monolythic with Short Leads
C3 -- Arco 469
C4 -- 820 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 -- 10
F/100 V Electrolytic
C11 -- 1
F, 50 V, Tantalum
C12 -- 330 pF, Dipped Mica (Short leads)
L1 -- VK200/4B Ferrite Choke or Equivalent, 3.0
H
L2 -- Ferrite Bead(s), 2.0
H
R1, R2 -- 51
/1.0 W Carbon
R3 -- 1.0
/1.0 W Carbon or Parallel Two 2
, 1/2 W Resistors
R4 -- 1 k
/1/2 W Carbon
T1 -- 16:1 Broadband Transformer
T2 -- 1:25 Broadband Transformer
Board Material -- 0.062
Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,
e
r = 5
C7
+
C5
R1
C4
T2
C3
R2
R3
RF INPUT
L1
C8
T1
C6
C9
D.U.T.
C10
28 V
+
RF
OUTPUT
L2
+
BIAS
0 12 V
C2
C11
R4
C12
3
MRF141
MOTOROLA RF DEVICE DATA
I D
, DRAIN CURRENT
(AMPS)
Figure 2. DC Safe Operating Area
Figure 3. GateSource Voltage versus
Case Temperature
Figure 4. Common Source Unity Gain Frequency
versus Drain Current
Figure 5. Capacitance versus
DrainSource Voltage
Figure 6. Power Gain versus Frequency
Figure 7. Output Power versus Input Power
TYPICAL CHARACTERISTICS
30
25
20
15
10
5
2
0
10
100
200
0
1
2
3
4
5
200
0
0
5
10
15
20
25
VDS, DRAINSOURCE VOLTAGE (VOLTS)
f, FREQUENCY (MHz)
Pin, INPUT POWER (WATTS)
200
20
2000
1000
0
0
20
ID, DRAIN CURRENT (AMPS)
100
10
1
1
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
10
P out
, OUTPUT
POWER (W
A
TTS)
f T
, UNITY
GAIN FREQUENCY
(MHz)
VDD = 28 V
IDQ = 250 mA
Pout = 150 W
VDS = 20 V
10 V
0
5
10
15
20
25
G
f = 175 MHz
VDD = 28 V
IDQ = 250 mA
f = 30 MHz
VDD = 28 V
IDQ = 250 mA
2
6
8
12
16
18
14
4
10
25
100
TC, CASE TEMPERATURE (
C)
25
50
75
0
300
100
200
0
300
100
200
PS
, POWER GAIN (dB)
Coss
Ciss
Crss
TC = 25
C
1.04
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
0.91
0.9
C, CAP
ACIT
ANCE
(pF)
V
GS
, GA
TE-SOURCE
VOL
T
AGE
(NORMALIZED)
ID = 5 A
0.25 A
0.5 A
2 A
4 A
1 A
5
MRF141
MOTOROLA RF DEVICE DATA
Figure 11. Input and Output Impedances
Figure 12. 175 MHz Test Circuit (Class AB)
C1, C2, C8 -- Arco 463 or equivalent
C3 -- 25 pF, Unelco
C4 -- 0.1
F, Ceramic
C5 -- 1.0
F, 15 WV Tantalum
C6 -- 25 pF, Unelco J101
C7 -- 25 pF, Unelco J101
C9 -- Arco 262 or equivalent
C10 -- 0.05
F, Ceramic
C11 -- 15
F, 35 WV Electrolytic
L1 -- 3/4
, #18 AWG into Hairpin
L2 -- Printed Line, 0.200
x 0.500
L3 -- 7/8
, #16 AWG into Hairpin
L4 -- 2 Turns, #16 AWG, 5/16 ID
RFC1 -- 5.6
H, Molded Choke
RFC2 -- VK2004B
R1 -- 150
, 1.0 W Carbon
R2 -- 10 k
, 1/2 W Carbon
R3 -- 120
, 1/2 W Carbon
C7
+
R1
C4
R2
RF INPUT
L1
C8
C9
DUT
+ 28 V
RF
OUTPUT
L3
BIAS
0 12 V
C5
+
C11
C10
RFC1
L2
C2
C3
L4
C1
C6
R3
150
15
30
7.5
2
100
f = 175 MHz
ZOL*
Zin
VDD = 28 V
IDQ = 250 mA
Pout = 150 W PEP
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device output operates at a
ZOL* =
given output power, voltage and frequency.
Zo = 10
f = 175 MHz
2
30
100
4
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