1
MRF150
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
NChannel EnhancementMode
Designed primarily for linear largesignal output stages up to 150 MHz
frequency range.
Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
Superior High Order IMD
IMD(d3) (150 W PEP) -- 32 dB (Typ)
IMD(d11) (150 W PEP) -- 60 dB (Typ)
100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
125
Vdc
DrainGate Voltage
VDGO
125
Vdc
GateSource Voltage
VGS
40
Vdc
Drain Current -- Continuous
ID
16
Adc
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
300
1.71
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
Operating Junction Temperature
TJ
200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.6
C/W
Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF150/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF150
150 W, to 150 MHz
NCHANNEL MOS
LINEAR RF POWER
FET
CASE 21111, STYLE 2
Motorola, Inc. 1997
D
G
S
REV 8
MRF150
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 100 mA)
V(BR)DSS
125
--
--
Vdc
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
IDSS
--
--
5.0
mAdc
GateBody Leakage Current (VGS = 20 V, VDS = 0)
IGSS
--
--
1.0
Adc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0
Vdc
DrainSource OnVoltage (VGS = 10 V, ID = 10 A)
VDS(on)
1.0
3.0
5.0
Vdc
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
gfs
4.0
7.0
--
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
--
400
--
pF
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Coss
--
240
--
pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
--
40
--
pF
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain
f = 30 MHz
(VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 150 MHz
Gps
--
--
17
8.0
--
--
dB
Drain Efficiency
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 3.75 A)
--
45
--
%
Intermodulation Distortion (1)
(VDD = 50 V, Pout = 150 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA)
IMD(d3)
IMD(d11)
--
--
32
60
--
--
dB
Load Mismatch
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 3.0 A)
GPS
IMD(d3)
IMD(d9 13)
--
--
--
20
50
75
--
--
--
dB
NOTE:
1. To MILSTD1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
Figure 1. 30 MHz Test Circuit (Class AB)
C1 -- 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 -- 0.1
F Ceramic Chip or
Monolythic with Short Leads
C3 -- 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 -- 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 -- 10
F/100 V Electrolytic
L1 -- VK200/4B Ferrite Choke or Equivalent, 3.0
H
L2 -- Ferrite Bead(s), 2.0
H
R1, R2 -- 51
/1.0 W Carbon
R3 -- 3.3
/1.0 W Carbon (or 2.0 x 6.8
/1/2 W in Parallel
T1 -- 9:1 Broadband Transformer
T2 -- 1:9 Broadband Transformer
RF
OUTPUT
RF
INPUT
BIAS
0 12 V
50 V
+
C5
+
C6
C8
C9
C10
C2
R1
R3
T1
T2
DUT
L1
L2
C1
R2
C3
C7
+
C4
3
MRF150
MOTOROLA RF DEVICE DATA
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
Figure 4. IMD versus Pout
Figure 5. Common Source Unity Gain Frequency
versus Drain Current
POWER GAIN (dB)
f, FREQUENCY (MHz)
25
20
15
10
5
0
2
5
10
20
200
50
100
P out
, OUTPUT
POWER (W
A
TTS)
Pin, INPUT POWER (WATTS)
250
200
0
0
0
1
2
3
4
5
150
150 MHz
30 MHz
IMD, INTERMODULA
TION
DIST
OR
TION
(dB)
Pout, OUTPUT POWER (WATTS PEP)
30
40
50
30
40
50
0
40
60
80
100
d3
d5
VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz
1000
800
0
0
5
10
20
ID, DRAIN CURRENT (AMPS)
f
T
, UNITY
GAIN FREQUENCY
(MHz)
VDD = 50 V
IDQ = 250 mA
Pout = 150 W (PEP)
100
50
250
200
150
100
50
VDD = 50 V
40 V
IDQ = 250 mA
VDD = 50 V
40
V
IDQ = 250 mA
6
35
45
35
45
20
120
140
160
150 MHz
30 MHz
d3
d5
600
400
200
15
15 V
VDS = 30 V
I DS
, DRAIN CURRENT
(AMPS)
VGS, GATESOURCE VOLTAGE (VOLTS)
10
2
4
6
8
10
0
8
6
4
2
0
VDS = 10 V
gfs = 5 mhos
Figure 6. Gate Voltage versus
Drain Current
10
0
20
30
MRF150
4
MOTOROLA RF DEVICE DATA
Figure 7. Series Equivalent Impedance
Figure 8. 150 MHz Test Circuit (Class AB)
BIAS
0 12 V
RF OUTPUT
RF INPUT
R1
C1
C2
C3
L1
C4
C5
+
DUT
R2
L4
RFC2
C10
C11
+
+ 50 Vdc
C9
C7
C8
L3
L2
C1, C2, C8 -- Arco 463 or equivalent
C3 -- 25 pF, Unelco
C4 -- 0.1
F, Ceramic
C5 -- 1.0
F, 15 WV Tantalum
C6 -- 25 pF, Unelco J101
C7 -- 25 pF, Unelco J101
C9 -- Arco 262 or equivalent
C10 -- 0.05
F, Ceramic
C11 -- 15
F, 60 WV Electrolytic
L1 -- 3/4
, 18 AWG into Hairpin
L2 -- Printed Line, 0.200
x 0.500
L3 -- 1
, #16 AWG into Hairpin
L4 -- 2 Turns #16 AWG, 5/16 ID
RFC1 -- 5.6
H, Choke
RFC2 -- VK2004B
R1 -- 150
, 1.0 W Carbon
R2 -- 10 k
, 1/2 W Carbon
R3 -- 120
, 1/2 W Carbon
R3
C6
150
90
30
7.5
4.0
2.0
ZOL*
Zin
15
f = 175 MHz
136
f = 175 MHz
90
30
15
7.5
4.0
2.0
Zo = 10
VDD = 50 V
IDQ = 250 mA
Pout = 150 W PEP
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device output operates at a
ZOL* =
given output power, voltage and frequency.
NOTE: Gate Shunted by 25 Ohms.
5
MRF150
MOTOROLA RF DEVICE DATA
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure
determines the capacitors from gatetodrain (Cgd), and
gatetosource (Cgs). The PN junction formed during the
fabrication of the RF MOSFET results in a junction capaci-
tance from draintosource (Cds).
These capacitances are characterized as input (Ciss),
output (Coss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the interterminal capaci-
tances and those given on data sheets are shown below. The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operat-
ing conditions in RF applications.
Cgd
GATE
SOURCE
Cgs
DRAIN
Cds
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain data
presented, Figure 5 may give the designer additional informa-
tion on the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain
current level. This is equivalent to fT for bipolar transistors.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some
extent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
fullon condition. This onresistance, VDS(on), occurs in the
linear region of the output characteristic and is specified under
specific test conditions for gatesource voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
input resistance is very high -- on the order of 109 ohms --
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gatetosource threshold voltage,
VGS(th).
Gate Voltage Rating -- Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination -- The gates of these devices are
essentially capacitors. Circuits that leave the gate opencir-
cuited or floating should be avoided. These conditions can
result in turnon of the devices due to voltage buildup on the
input capacitor due to leakage currents or pickup.
Gate Protection -- These devices do not have an internal
monolithic zener diode from gatetosource. If gate protection
is required, an external zener diode is recommended.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector
Drain
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter
Source
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base
Gate
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V(BR)CES
V(BR)DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCBO
VDGO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IC
ID
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICES
IDSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEBO
IGSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VBE(on)
VGS(th)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCE(sat)
VDS(on)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cib
Ciss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cob
Coss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hfe
gfs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RCE(sat) =
VCE(sat)
IC
rDS(on) =
VDS(on)
ID
MRF150
6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 21111
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
U
M
M
Q
R
B
1
4
3
2
D
K
E
SEATING
PLANE
C
J
H
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.960
0.990
24.39
25.14
B
0.465
0.510
11.82
12.95
C
0.229
0.275
5.82
6.98
D
0.216
0.235
5.49
5.96
E
0.084
0.110
2.14
2.79
H
0.144
0.178
3.66
4.52
J
0.003
0.007
0.08
0.17
K
0.435
11.05
M
45 NOM
45 NOM
Q
0.115
0.130
2.93
3.30
R
0.246
0.255
6.25
6.47
U
0.720
0.730
18.29
18.54
_
_
STYLE 2:
PIN 1. SOURCE
2. GATE
3. SOURCE
4. DRAIN
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MRF150/D
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