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Электронный компонент: MRF1518T1

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MRF1518NT1 MRF1518T1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common source amplifier applications in 12.5 volt
mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power -- 8 Watts
Power Gain -- 11 dB
Efficiency -- 55%
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal
Impedance Parameters
RF Power Plastic Surface Mount Package
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
N Suffix Indicates Lead-Free Terminations
Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +40
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Drain Current -- Continuous
I
D
4
Adc
Total Device Dissipation @ T
C
= 25C
(1)
Derate above 25C
P
D
62.5
0.50
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
150
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
JC
2
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
C
1. Calculated based on the formula P
D
=
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF1518
Rev. 6, 3/2005
Freescale Semiconductor
Technical Data
MRF1518NT1
MRF1518T1
520 MHz, 8 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
G
D
S
TJ TC
RJC
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF1518NT1 MRF1518T1
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 40 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 100 A)
V
GS(th)
1.0
1.6
2.1
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
--
0.4
--
Vdc
Dynamic Characteristics
Input Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
--
66
--
pF
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
C
oss
--
33
--
pF
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
--
4.5
--
pF
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
G
ps
10
11
--
dB
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
50
55
--
%
MRF1518NT1 MRF1518T1
3
RF Device Data
Freescale Semiconductor
Figure 1. 450 - 520 MHz Broadband Test Circuit
V
DD
C6
R4
C7
C5
R3
RF
INPUT
RF
OUTPUT
Z2
Z3
Z6
C1
C3
C12
DUT
Z7
Z9
Z10
Z4
Z5
L1
Z8
N2
C16
B2
N1
+
C11
C10
B1, B2
Short Ferrite Beads, Fair Rite Products
(2743021446)
C1, C12
240 pF, 100 mil Chip Capacitors
C2, C3, C10, C11
0 to 20 pF Trimmer Capacitors
C4
82 pF, 100 mil Chip Capacitor
C5, C16
120 pF, 100 mil Chip Capacitors
C6, C13
10 F, 50 V Electrolytic Capacitors
C7, C14
1,200 pF, 100 mil Chip Capacitors
C8, C15
0.1 mF, 100 mil Chip Capacitors
C9
30 pF, 100 mil Chip Capacitor
L1
55.5 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mounts
R1
15 Chip Resistor (0805)
R2
51 , 1/2 W Resistor
R3
10 Chip Resistor (0805)
R4
33 k, 1/8 W Resistor
Z1
0.451 x 0.080 Microstrip
Z2
1.005 x 0.080 Microstrip
Z3
0.020 x 0.080 Microstrip
Z4
0.155 x 0.080 Microstrip
Z5, Z6
0.260 x 0.223 Microstrip
Z7
0.065 x 0.080 Microstrip
Z8
0.266 x 0.080 Microstrip
Z9
1.113 x 0.080 Microstrip
Z10
0.433 x 0.080 Microstrip
Board
Glass Teflon
, 31 mils, 2 oz. Copper
Z1
C2
R1
C4
V
GG
C13
+
C8
B1
R2
C14
C15
C9
TYPICAL CHARACTERISTICS, 450 - 520 MHz
P
out
, OUTPUT POWER (WATTS)
IRL, INPUT
RETURN LOSS (dB)
-5
-15
-20
-10
2
0
0
11
1
Figure 2. Output Power versus Input Power
P
in
, INPUT POWER (WATTS)
2
Figure 3. Input Return Loss
versus Output Power
0.3
P out
, OUTPUT
POWER (W
A
TTS)
0
6
0.5
0.1
4
520 MHz
470 MHz
500 MHz
0.4
0.6
0.2
0
12
450 MHz
3
520 MHz
470 MHz
500 MHz
450 MHz
10
8
5
4
6
7
9
8
10
V
DD
= 12.5 Vdc
V
DD
= 12.5 Vdc
4
RF Device Data
Freescale Semiconductor
MRF1518NT1 MRF1518T1
TYPICAL CHARACTERISTICS, 450 - 520 MHz
2
P
out
, OUTPUT POWER (WATTS)
50
10
80
0
12
Ef
f, DRAIN EFFICIENCY

(%)
30
60
40
3
1
500 MHz
520 MHz
470 MHz
Ef
f, DRAIN EFFICIENCY

(%)
Figure 4. Gain versus Output Power
P
out
, OUTPUT POWER (WATTS)
7
5
13
Figure 5. Drain Efficiency versus Output Power
2
GAIN (dB)
0
Figure 6. Output Power versus Biasing Current
12
I
DQ
, BIASING CURRENT (mA)
0
Figure 7. Drain Efficiency versus
Biasing Current
70
I
DQ
, BIASING CURRENT (mA)
45
Figure 8. Output Power versus Supply Voltage
8
V
DD
, SUPPLY VOLTAGE (VOLTS)
2
Figure 9. Drain Efficiency versus Supply Voltage
V
DD
, SUPPLY VOLTAGE (VOLTS)
30
12
11
8
0
40
60
60
30
400
0
7
12
600
1000
80
2
4
8
9
17
200
50
11
11
P out
, OUTPUT
POWER (W
A
TTS)
200
1000
400
600
P out
, OUTPUT
POWER (W
A
TTS)
9
15
16
10
9
10
11
16
3
1
65
55
3
4
6
5
Ef
f, DRAIN EFFICIENCY

(%)
50
70
35
500 MHz
520 MHz
470 MHz
450 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
V
DD
= 12.5 Vdc
P
in
= 26.2 dBm
I
DQ
= 150 mA
P
in
= 26.2 dBm
V
DD
= 12.5 Vdc
P
in
= 26.2 dBm
I
DQ
= 150 mA
P
in
= 26.2 dBm
V
DD
= 12.5 Vdc
4
6
7
5
8
9
10
15
4
6
7
5
8
9
10
11
0
20
70
V
DD
= 12.5 Vdc
800
6
10
800
40
35
14
12
13
11
8
10
9
15
13
14
45
55
65
75
MRF1518NT1 MRF1518T1
5
RF Device Data
Freescale Semiconductor
Figure 10. 820 - 850 MHz Broadband Test Circuit
V
DD
RF
INPUT
RF
OUTPUT
C1
DUT
L1
N2
N1
B1, B2
Long Ferrite Beads, Fair Rite Products
C1, C9
12 pF, 100 mil Chip Capacitors
C2
6.8 pF, 100 mil Chip Capacitor
C3, C4
20 pF, 100 mil Chip Capacitors
C5
51 pF, 100 mil Chip Capacitor
C6, C13
1000 pF, 100 mil Chip Capacitors
C7, C14
0.039 F, 100 mil Chip Capacitors
C8
1 F, 20 V Tantalum Chip Capacitor
C10
3 pF, 100 mil Chip Capacitor
C11, C12
51 pF, 100 mil Chip Capacitors
C15
22 F, 35 V Tantalum Chip Capacitor
L1, L2
18.5 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mounts
R1
47 Chip Resistor (0805)
Z1
1.145 x 0.080 Microstrip
Z2
0.786 x 0.080 Microstrip
Z3
0.115 x 0.223 Microstrip
Z4
0.145 x 0.223 Microstrip
Z5
0.260 x 0.223 Microstrip
Z6
0.081 x 0.080 Microstrip
Z7
0.104 x 0.080 Microstrip
Z8
1.759 x 0.080 Microstrip
Board
Glass Teflon
, 31 mils, 2 oz. Copper
V
GG
B1
R1
L2
Z1
C2
Z2
Z3
C3
C4
Z4
+
C8
C7
C6
C5
Z5
Z6
C9
Z7
C10
Z8
C11
B2
C12
C13
C14
C15
+
TYPICAL CHARACTERISTICS, 820 - 850 MHz
P
out
, OUTPUT POWER (WATTS)
IRL, INPUT
RETURN LOSS (dB)
-10
-30
-40
-20
2
1
0
12
Figure 11. Output Power versus Input Power
P
in
, INPUT POWER (WATTS)
4
Figure 12. Input Return Loss
versus Output Power
0.3
P out
, OUTPUT
POWER (W
A
TTS)
0
6
0.5
0.1
2
820 MHz
830 MHz
0.4
0.6
0.2
0
12
840 MHz
3
8
10
4
6
5
7
8
9
10
11
V
DD
= 12.5 Vdc
V
DD
= 12.5 Vdc
850 MHz
820 MHz
830 MHz
840 MHz
850 MHz