1
MRF160
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
Power Field Effect Transistor
NChannel EnhancementMode MOSFET
Designed primarily for wideband largesignal output and driver from
30500 MHz.
Typical Performance at 400 MHz, 28 Vdc
Output Power = 4.0 Watts
Gain = 17 dB
Efficiency = 50%
Excellent Thermal Stability, Ideally Suited for Class A Operation
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
Low Crss 0.8 pF Typical at VDS = 28 Volts
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainGate Voltage
VDSS
65
Vdc
DrainGate Voltage (RGS = 1.0 M
)
VDGR
65
Vdc
GateSource Voltage
VGS
40
Vdc
Drain CurrentContinuous
ID
1.0
ADC
Total Device Dissipation @ TC = 25
C
Derate Above 25
C
PD
24
0.14
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
Operating Junction Temperature
TJ
200
C
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case
R
JC
7.2
C/W
NOTE: Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF160/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF160
4.0 W, to 400 MHz
MOSFET BROADBAND
RF POWER FET
CASE 24906, STYLE 3
D
S
G
Motorola, Inc. 1995
REV 2
MRF160
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VDS = 0 Vdc, VGS = 0 Vdc, ID = 5.0 mA)
V(BR)DSS
65
--
--
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 V)
IDSS
--
--
0.8
mA
GateSource Leakage Current
(VGS = 40 Vdc, VDS = 0 Vdc)
IGSS
--
--
1.0
A
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mA)
VGS(th)
1.0
3.0
6.0
Vdc
Drain Source OnVoltage
(VDS (on), VGS = 10 Vdc, ID = 500 mA)
VDS(on)
--
3.8
--
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mA)
gfs
110
160
--
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 Vdc, VGS = 0 V, f = 1.0 MHz)
Ciss
--
6.0
--
pF
Output Capacitance
(VDS = 28 V, VGS = 0 Vdc, f = 1.0 MHz)
Coss
--
8.0
--
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Crss
--
0.8
--
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA)
Gps
15
17
--
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA)
45
50
--
%
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA)
Load VSWR = 30:1 at All Phase Angles at Frequency of Test
No Degradation in Output Power
Series Equivalent Input Impedance
(VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA)
Zin
--
5.23j 27.2
--
Ohms
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA)
Zout
--
14.7j 31.2
--
Ohms
3
MRF160
MOTOROLA RF DEVICE DATA
Figure 1. 400 MHz Test Circuit
C1, C5
220 pF, Chip Capacitor
C2
18 pF, ATC Chip Capacitor
C3
2.020 pF, Johanson Trimmer Capacitor
C4
2.010 pF, Johanson Trimmer Capacitor
C6, C7, C8
0.1
F
C9, C10
680 pF, Feed Through
C11
50
F, 50 V
L1
#20 AWG, 1 Turn 0.255
ID
L2
#20 AWG, Hairpin 1.3
long, bend into hairpin
L3
#20 AWG, Hairpin 1.1
long, bend into hairpin
R1
160
, 1/2 Watt
R2
10 k
, 1/2 Watt
R3
10 k
, 10 Turns Bourns
R4
1.8 k
, 1/4 Watt
RFC1
Ferroxcube VK20019/4B
RFC2
10 Turns, #20 AWG, Enameled Close
Wound, 0.250
ID
Z1
Microstrip Line 0.167
wide, 0.820
long
Z2
Microstrip Line 0.240
wide, 0.240
long
Z3
Microstrip Line 0.240
wide, 0.240
long
Z4
Microstrip Line 0.230
wide, 0.590
long
Z5
Microstrip Line 0.230
wide, 0.580
long
Z6
Microstrip Line 0.167
wide, 0.620
long
Z7
Microstrip Line 0.167
wide, 0.800
long
Board Material 0.060
Glass Teflon
2 oz. Copper clad both sides
r = 2.55
+
+
L2
C3
C2
Z2
Z1 C1
L1
Z3
Z4
D1
C7
C8
R4
R2
C6
R1
RFC1
C9
C10
C11
Vdc
VDD 28 V
RF OUTPUT
RF INPUT
C4
Z6
L3
Z7
C5
D.U.T.
RFC2
R3
L3
L2
0.240
0.95
0.55
0.65
Z5
MRF160
4
MOTOROLA RF DEVICE DATA
Typical Characteristics
P
out
, OUTPUT
POWER (W
A
TTS)
P
out
, OUTPUT
POWER (W
A
TTS)
VDS, SUPPLY VOLTAGE (VOLTS)
PIN, INPUT POWER (mW)
0
50
100
150
800
250
6
0
6
0
12
16
20
24
26
28
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Voltage
VDS, DRAIN VOLTAGE (VOLTS)
VDS, DRAINSOURCE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
I D
, DRAIN CURRENT
(AMPS)
0
4
8
12
16
20
28
32
0
10
0
0
1
10
100
24
14
18
22
5
4
3
2
1
5
4
3
2
1
28
20
12
4
8
16
24
0.1
1
f = 500 MHz
f = 400 MHz
VDS = 13.5 Vdc
IDQ = 50 mA
f = 400 MHz
VDS = 28 Vdc
IDQ = 50 mA
50 mW
150 mW
f = 400 MHz
IDQ = 50 mA
Pin = 250 mW
f = 1.0 MHz
VGS = 0 V
Coss
Ciss
Crss
VDS, GATESOURCE VOLTAGE (VOLTS)
10
0
35
25
15
10
20
30
40
VGS, GATESOURCE VOLTAGE (VOLTS)
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.5
1
1.5
2
2.5
3
3.5
4
5
Figure 4. Output Power versus Gate Voltage
Figure 5. Output Power versus Gate Voltage
Figure 6. Capacitance versus DrainSource Voltage
Figure 7. DC Safe Operating Area
P
out
, OUTPUT
POWER (W
A
TTS)
P
out
, OUTPUT
POWER (W
A
TTS)
8
6
4
2
0
2
4
8
6
10
Typical Device Shown
VDD = 28 V
IDQ = 100 mA
VGS(th) = 3 V
f = 400 MHz
f = 400 MHz
VDS = 28 V
IDQ = 50 mA
Pin = Constant
5
MRF160
MOTOROLA RF DEVICE DATA
f
S11
S21
S12
S22
(MHz)
|S11|
|S21|
|S12|
|S22|
10
0.96
2.0
14.47
177
0.01
96
1.11
5.0
30
0.99
16
13.34
169
0.02
79
0.92
11
50
0.97
28
12.96
159
0.03
70
0.90
22
75
0.94
40
12.24
148
0.04
60
0.87
35
100
0.90
52
11.40
139
0.05
51
0.84
45
120
0.87
61
10.70
132
0.05
45
0.81
53
150
0.83
72
9.66
123
0.06
37
0.77
63
170
0.81
79
9.05
118
0.06
33
0.75
69
200
0.78
88
8.21
110
0.06
26
0.72
77
220
0.77
93
7.67
106
0.07
23
0.71
81
250
0.75
100
7.00
100
0.07
18
0.69
87
300
0.72
110
6.00
92
0.07
12
0.67
96
350
0.71
118
5.24
84
0.07
6.0
0.66
103
390
0.71
124
4.73
79
0.07
1.0
0.66
108
400
0.70
125
4.63
77
0.07
0
0.67
109
410
0.70
127
4.52
76
0.07
1.0
0.66
110
450
0.70
131
4.10
71
0.07
5.0
0.66
114
470
0.70
133
3.93
69
0.06
6.0
0.67
116
500
0.70
137
3.68
65
0.06
8.0
0.67
118
600
0.71
145
3.01
55
0.06
14
0.69
126
700
0.72
153
2.51
46
0.05
18
0.71
132
800
0.73
160
2.13
37
0.04
21
0.73
137
900
0.75
166
1.83
30
0.03
19
0.75
142
1000
0.76
171
1.60
23
0.03
10
0.77
146
1100
0.77
177
1.40
16
0.02
3.0
0.79
151
1200
0.78
177
1.25
10
0.02
18
0.80
155
1300
0.79
172
1.11
4.0
0.03
29
0.82
159
1400
0.81
166
1.00
1.0
0.03
35
0.83
163
1500
0.81
161
0.90
6.0
0.03
48
0.85
166
Table 1. Common Source Scattering Parameters (VDS = 28 Vdc, ID = 200 mA, 50
System)
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