1
MRF185
MOTOROLA RF DEVICE DATA
Advance Information
The RF MOSFET Line
RF POWER
Field-Effect Transistor
NChannel EnhancementMode Lateral MOSFET
High Gain, Rugged Device
Broadband Performance from HF to 1 GHz
Bottom Side Source Eliminates DC Isolators, Reducing Common
Mode Inductances
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
65
Vdc
GateSource Voltage
VGS
20
Vdc
Storage Temperature Range
Tstg
65 to +150
C
Operating Junction Temperature
TJ
200
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
250
1.45
Watts
W/
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.7
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 V, ID = 1
m
Adc)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
IDSS
1
Adc
GateSource Leakage Current
(VGS = 20 V, VDS = 0 V)
IGSS
1
Adc
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF185/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF185
85 WATTS, 1.0 GHz
28 VOLTS
LATERAL NCHANNEL
BROADBAND
RF POWER MOSFET
CASE 375B02, STYLE 2
Motorola, Inc. 1997
D
G
S
(FLANGE)
D
G
REV 1
MRF185
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS continued
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 26 V, ID = 300 mA per side)
VGS(Q)
3
4
5
Vdc
Delta Quiescent Voltage between sides
(VDS = 26 V, ID = 300 mA per side)
VGS(Q)
0.15
0.3
Vdc
DrainSource OnVoltage
(VGS = 10 V, ID = 3 A per side)
VDS(on)
0.75
1
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A per side)
gfs
1.6
2
s
DYNAMIC CHARACTERISTICS
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
38
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Crss
4.6
6
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA)
Gps
11
14
dB
Drain Efficiency
(VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA)
45
55
%
Load Mismatch
(VDD = 28 Vdc, Pout = 85 W, f = 960 MHz, IDQ = 600 mA,
Load VSWR 5:1 at All Phase Angles)
No Degradation in Output Power
3
MRF185
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 375B02
ISSUE A
STYLE 2:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.330
1.350
33.79
34.29
B
0.375
0.395
9.52
10.03
C
0.180
0.210
4.57
5.33
D
0.320
0.340
8.13
8.64
E
0.060
0.070
1.52
1.77
F
0.004
0.006
0.11
0.15
G
1.100 BSC
27.94 BSC
H
0.093
0.108
2.36
2.74
K
0.085
0.115
2.16
2.92
L
0.425 BSC
10.80 BSC
N
0.845
0.875
21.46
22.23
Q
0.118
0.130
3.00
3.30
R
0.390
0.410
9.91
10.41
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
G
L
K
R
D
1
2
3
4
Q
2 PL
M
B
M
0.25 (0.010)
T
B
T
E
H
N
A
F
C
SEATING
PLANE
5
4 PL
MRF185
4
MOTOROLA RF DEVICE DATA
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Mfax is a trademark of Motorola, Inc.
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MRF185/D
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