1
MRF1946 MRF1946A
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
Power Transistors
. . . designed for 12.5 volt largesignal power amplifiers in commercial and
industrial equipment.
High Common Emitter Power Gain
Specified 12.5 V, 175 MHz Performance
Output Power = 30 Watts
Power Gain = 10 dB
Efficiency = 60%
Diffused Emitter Resistor Ballasting
Characterized to 220 MHz
Load Mismatch at High Line and Overdrive Conditions
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
16
Vdc
CollectorBase Voltage
VCBO
36
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current -- Continuous
IC
8.0
Adc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
100
0.57
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
Junction Temperature
TJ
200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.75
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
16
--
--
Vdc
CollectorEmitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
36
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25
C)
ICES
--
--
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
40
75
150
--
(continued)
Order this document
by MRF1946/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF1946
MRF1946A
30 W, 136 220 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 21107, STYLE 1
MRF1946
CASE 145A09, STYLE 1
MRF1946A
Motorola, Inc. 1994
REV 6
MRF1946 MRF1946A
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
75
100
pF
FUNCTIONAL TESTS
CommonEmitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 30 W, f = 175 MHz)
Gpe
10
11
--
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 30 W, f = 175 MHz)
60
70
--
%
Load Mismatch
(VCC = 15.5 Vdc, Pin = 2.0 dB Overdrive,
Load VSWR = 30:1)
No Degradation in Power Output
Figure 1. Broadband Test Circuit Schematic
C1 -- 56 pF MiniUnelco, 3HS000656
C2 -- 47 pF MiniUnelco, 3HS000647
C3, C4 -- 180 pF Chip Cap, ATC 100B181JC500
C5 -- 150 pF Unelco, J101150
C6 -- 39 pF MiniUnelco, 3HS000639
C7, C8 -- 1000 pF Chip Cap, ATC 100B102JC50
C9 -- 0.1
F Ceramic Capacitor
C10 -- 10
F, 25 V Electrolytic Capacitor
C11 -- 56 pF MiniUnelco, 3HS000656
L1 -- 2 Turns #18 AWG, 0.125
ID
L2, L3 -- Circuit Board and Mounting Pad Inductance
L4 -- 3 Turns #18 AWG, 0.125
ID
L5 -- 6 Turns #16 Enameled, 0.250
ID
RFC1 -- 0.15
H Molded Choke w/Ferrite Bead
RFC2 -- Ferrite Choke, Fair Rite VK2004B
Board Material -- 1/32
,
Glass Teflon, 1 oz. Cu Plating
Bead -- Ferroxcube
RFC1
DUT
+12.5
Vdc
C1
C10
B
L1
L2
C2
C3
C4
RFC2
L5
L3
L4
C6
C7
C5
C11
C8
C9
+
3
MRF1946 MRF1946A
MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
Figure 6. Output Power versus Supply Voltage
Figure 7. Output Power versus Supply Voltage
P
, OUTPUT
POWER (W
A
TTS)
out
P
, OUTPUT
POWER (W
A
TTS)
out
P
, OUTPUT
POWER (W
A
TTS)
out
P
, OUTPUT
POWER (W
A
TTS)
out
P
, OUTPUT
POWER (W
A
TTS)
out
P
, OUTPUT
POWER (W
A
TTS)
out
60
Pin, INPUT POWER (WATTS)
0
48
36
24
12
0
1
2
3
4
5
50
230
210
190
170
150
130
f, FREQUENCY (MHz)
40
30
20
10
0
50
40
30
20
10
5
VCC, SUPPLY VOLTAGE (VOLTS)
6
7
8
9
10
11
12
13
14
15
50
40
30
20
10
5
VCC, SUPPLY VOLTAGE (VOLTS)
6
7
8
9
10
11
12
13
14
15
50
40
30
20
10
5
VCC, SUPPLY VOLTAGE (VOLTS)
6
7
8
9
10
11
12
13
14
15
50
40
30
20
10
5
VCC, SUPPLY VOLTAGE (VOLTS)
6
7
8
9
10
11
12
13
14
15
VCC = 12.5 V
f = 136 MHz
150 MHz
175 MHz
220 MHz
3 W
2 W
1 W
VCC = 12.5 V
Pin = 4 W
Pin = 4 W
3 W
2 W
1 W
Pin = 4 W
3 W
2 W
1 W
Pin = 4 W
3 W
2 W
1 W
Pin = 4 W
3 W
2 W
1 W
f = 220 MHz
f = 175 MHz
f = 150 MHz
f = 136 MHz
MRF1946 MRF1946A
4
MOTOROLA RF DEVICE DATA
Figure 8. Typical Performance in a Broadband Circuit
G
pe
, POWER GAIN (dB)
170
f, FREQUENCY (MHz)
155
160
165
175
100
12
80
60
20
c
, COLLECT
OR EFFICIENCY
Gpe
c
INPUT VSWR
Pin = 3 W
VCC = 12.5 V
150
40
10
8
6
4
2.0:1
1.5:1
1.1:1
Figure 9. Series Equivalent Input and
Output Impedance
Zin
f = 136 MHz
220
150
ZOL*
f = 136 MHz
175
175
220
150
Zo = 10
f
MHz
Zin
Ohms
ZOL*
Ohms
136
150
175
220
0.60 j0.48
0.63 j0.26
0.62 + j0.13
0.73 + j0.57
2.22 j0.74
2.30 j0.40
2.35 j0.04
2.20 + j0.43
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device output operates at a
ZOL* =
given output power, voltage and frequency.
VCC = 12.5 Vdc, Pout = 30 W
5
MRF1946 MRF1946A
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 21107
ISSUE N
MRF1946
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
U
M
M
Q
R
B
1
4
3
2
D
K
E
SEATING
PLANE
C
J
H
S
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.960
0.990
24.39
25.14
B
0.370
0.390
9.40
9.90
C
0.229
0.281
5.82
7.13
D
0.215
0.235
5.47
5.96
E
0.085
0.105
2.16
2.66
H
0.150
0.108
3.81
4.57
J
0.004
0.006
0.11
0.15
K
0.395
0.405
10.04
10.28
M
40
50
40
50
Q
0.113
0.130
2.88
3.30
R
0.245
0.255
6.23
6.47
S
0.790
0.810
20.07
20.57
U
0.720
0.730
18.29
18.54
_
_
_
_
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
CASE 145A09
ISSUE M
MRF1946A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.370
0.385
9.40
9.78
B
0.320
0.330
8.13
8.38
C
0.670
0.790
17.02
20.07
D
0.215
0.235
5.46
5.97
E
0.070
1.78
J
0.003
0.007
0.08
0.18
K
0.490
12.45
L
0.055
0.070
1.40
1.78
M
45 NOM
45 NOM
P
0.050
1.27
R
0.299
0.307
7.59
7.80
S
0.158
0.178
4.01
4.52
T
0.083
0.100
2.11
2.54
U
0.098
0.132
2.49
3.35
_
_
SEATING
PLANE
S
J
U
K
D
L
A
R
M
3
1
4
2
B
E
P
T
832UNC2A
WRENCH FLAT
C
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