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MRF20030R
MOTOROLA RF DEVICE DATA
The RF SubMicron Bipolar Line
RF Power Bipolar Transistor
Designed for broadband commercial and industrial applications at frequen-
cies from 1800 to 2000 MHz. The high gain and broadband performance of this
device makes it ideal for largesignal, commonemitter class AB amplifier
applications. Suitable for frequency modulated, amplitude modulated and
multicarrier base station RF power amplifiers.
Specified 26 Volts, 2.0 GHz, Class AB, TwoTones Characteristics
Output Power -- 30 Watts (PEP)
Power Gain -- 9.8 dB
Efficiency -- 34%
Intermodulation Distortion -- 28 dBc
Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics
Output Power -- 30 Watts
Power Gain -- 11 dB
Efficiency -- 40%
Intermodulation Distortion -- 30 dBc
Excellent Thermal Stability
Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP)
Output Power
Characterized with Series Equivalent LargeSignal Impedance Parameters
SParameter Characterization at High Bias Levels
Designed for FM, TDMA, CDMA, and MultiCarrier Applications
Note: Not suitable for class A operation.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
25
Vdc
CollectorEmitter Voltage
V
CES
60
Vdc
CollectorBase Voltage
V
CBO
60
Vdc
CollectorEmitter Voltage (R
BE
= 100
)
V
CER
30
Vdc
EmitterBase Voltage
V
EB
3
Vdc
Collector Current Continuous
I
C
4
Adc
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
125
0.71
Watts
W/
C
Storage Temperature Range
T
stg
65 to +150
C
Operating Junction Temperature
T
J
200
C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance, Junction to Case
(1)
R
JC
1.4
C/W
(1) Thermal resistance is determined under specified RF operating condition.
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 25 mAdc, I
B
= 0)
V
(BR)CEO
25
28
--
Vdc
CollectorEmitter Breakdown Voltage
(I
C
= 25 mAdc, V
BE
= 0)
V
(BR)CES
60
70
--
Vdc
CollectorBase Breakdown Voltage
(I
C
= 25 mAdc, I
E
= 0)
V
(BR)CBO
60
70
--
Vdc
Order this document
by MRF20030R/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF20030R
30 W, 2.0 GHz
NPN SILICON
BROADBAND
RF POWER TRANSISTOR
CASE 395C01, STYLE 1
Motorola, Inc. 1999
(Replaces MRF20030/D)
REV 1
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MRF20030R
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
EmitterBase Breakdown Voltage
(I
B
= 5 mAdc, I
C
= 0)
V
(BR)EBO
3
3.8
--
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, V
BE
= 0)
I
CES
--
--
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 5 Vdc, I
CE
= 1 Adc)
h
FE
20
40
80
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 26 Vdc, I
E
= 0, f = 1.0 MHz)
(1)
C
ob
--
28
--
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
CommonEmitter Amplifier Power Gain
(V
CC
= 26 Vdc, P
out
= 30 Watts, I
CQ
= 120 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
G
pe
9.8
11
--
dB
Collector Efficiency
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 120 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
34
38
--
%
Intermodulation Distortion
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 120 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
IMD
--
30
28
dBc
Input Return Loss
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 125 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
IRL
10
17
--
dB
Load Mismatch
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 120 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
No Degradation in Output Power
CommonEmitter Amplifier Power Gain
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 125 mA,
f
1
= 1930.0 MHz, f
2
= 1930.1 MHz)
G
pe
--
11
--
dB
Collector Efficiency
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 125 mA,
f
1
= 1930.0 MHz, f
2
= 1930.1 MHz)
--
34
--
%
Intermodulation Distortion
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 125 mA,
f
1
= 1930.0 MHz, f
2
= 1930.1 MHz)
IMD
--
32
--
dBc
Input Return Loss
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 125 mA,
f
1
= 1930.0 MHz, f
2
= 1930.1 MHz)
IRL
--
14
--
dB
GUARANTEED BUT NOT TESTED
(In Motorola Test Fixture)
CommonEmitter Amplifier Power Gain
(V
CC
= 26 Vdc, P
out
= 30 Watts, I
CQ
= 125 mA, f = 1880 MHz)
G
pe
--
10.5
--
dB
Collector Efficiency
(V
CC
= 26 Vdc, P
out
= 30 Watts , I
CQ
= 125 mA, f = 1880 MHz)
--
40
--
%
Input Return Loss
(V
CC
= 26 Vdc, P
out
= 30 Watts , I
CQ
= 125 mA, f = 1880 MHz)
IRL
--
14
--
dB
Output Mismatch Stress
(V
CC
= 25 Vdc, P
out
= 30 Watts, I
CQ
= 125 mA,
f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test)
Typically No Degradation in Output Power
(1) For Information Only. This Part Is Collector Matched.
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MRF20030R
MOTOROLA RF DEVICE DATA
R7
Figure 1. Class AB Test Fixture Electrical Schematic
B1, B2
Ferrite Bead, P/N 5659065/3B, Ferroxcube
C1, C13
0.1
F, Chip Capacitor, Kermet
C2
100
F, 50 V, Electrolytic Capacitor, Mallory
C3, C5, C12
0.64 pF, Variable Capacitor, Johanson, Gigatrim
C4, C11
10 pF, B Case Chip Capacitor, ATC
C6, C8
24 pF, B Case Chip Capacitor, ATC
C7, C9
75 pF, B Case Chip Capacitor, ATC
C10
0.42.5 pF, Variable Capacitor, Johanson, Gigatrim
C14
470
F, 63 V, Electrolytic Capacitor, Mallory
D1
Diode, Motorola (MUR3160T3)
L1, L4
12 Turns, 22 AWG, IDIA. 0.195
L2, L3
0.750
20 AWG
N1, N2
Type N Flange Mount RF Connector
MA/COM 3052164810
R1, R2
130
, 1/8 W Chip Resistor, Rohm
R3, R4
100
, 1/8 W Chip Resistor, Rohm
R5, R8
10
, 1/2 W Resistor
R6, R7
10
, 1/8 W Chip Resistor, Rohm (10J)
Q1
Transistor, PNP Motorola (BD136)
Q2
Transistor, NPN Motorola (MJD47)
Board
30 Mil Glass Teflon
, Arlon GX03005522,
r
= 2.55
RF
INPUT
RF
OUT
DUT
Z8
Z1
Z2
Z3
Z4
Z5
Z6
Z7
V
BB
V
CC
Q2
Q1
D1
R2
C1
C2
R5
L1
R3
C6
C7
L2
C4
C3
C5
C8
C9
L4
C12
B2
C13 C14
R8
L4
C11
C10
R1
R4
B1
R6
+
+
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MRF20030R
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
G
pe
, POWER GAIN (dB)
G
pe
, GAIN (dB)
Figure 2. Output Power & Power Gain
versus Input Power
30
P
in
, INPUT POWER (WATTS)
5
0
2
10
20
15
Figure 3. Output Power versus Frequency
0
1850
f, FREQUENCY (MHz)
40
20
5
1
3
5
30
P out
, OUTPUT
POWER (W
A
TTS)
1800
2000
0
P out
, OUTPUT
POWER (W
A
TTS)
25
11
10
9
8
G
pe
, GAIN (dB)
1900
1950
Figure 4. Intermodulation Distortion
versus Output Power
- 20
P
out
, OUTPUT POWER (WATTS) PEP
- 70
20
Figure 5. Power Gain and Intermodulation
Distortion versus Supply Voltage
10.5
V
CC
, COLLECTOR SUPPLY VOLTAGE (Vdc)
9
10
30
40
8
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
Figure 6. Intermodulation Distortion
versus Output Power
0.01
P
out
, OUTPUT POWER (WATTS) PEP
- 45
- 60
10
- 35
Figure 7. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
5
1.0
10
10
1.0
100
100
0.01
0
6
7
8
9.5
8.5
7.5
20
22
18
- 50
- 40
- 25
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
-45
-35
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
V
CC
= 26 Vdc
I
CQ
= 125 mA
f = 2000 MHz Single Tone
35
24
26
28
12
11.5
-25
-20
-15
-10
-5
- 60
- 50
- 40
- 30
10
25
15
P
out
= 30 W (PEP)
I
CQ
= 125 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
IMD
G
pe
P
out
3rd Order
7th Order
5th Order
P
in
= 3.5 W
V
CC
= 26 Vdc
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
250 mA
125 mA
I
CQ
= 75 mA
V
CC
= 26 Vdc
I
CQ
= 125 mA
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
4
- 55
15
5
25
35
75 mA
250 mA
125 mA
11.5
10.5
9.5
8.5
1.5 W
35
2.5 W
10
11
G
pe
-40
-30
- 30
11
9
I
CQ
= 400 mA
V
CC
= 26 Vdc
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
0.1
0.1
400 mA
V
CC
= 26 Vdc
I
CQ
= 125 mA
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MRF20030R
MOTOROLA RF DEVICE DATA
Figure 8. Performance in Broadband Circuit
f, FREQUENCY (MHz)
2000
1900
1850
1800
11
10
9.5
9
38
34
32
28
COLLECT
OR EFFICIENCY
(%)
INPUT
VSWR
G
pe
, GAIN (dB)
10.5
36
G
pe
VSWR
P
out
= 30 W (PEP)
V
CC
= 26 Vdc
I
CQ
= 125 mA
1950
1.7:1
1.1:1
Figure 9. MTBF Factor versus
Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
250
200
150
100
50
0
1.E+08
1.E+07
1.E+05
1.E+04
1.E+03
1.E+02
MTBF F
ACT
OR (HOURS x
AMPS )
This above graph displays calculated MTBF in hours x ampere
2
emitter current. Life tests at elevated temperatures have correlated
to better than 10% of the theoretical prediction for metal failure.
Divide MTBF factor by I
C2
for MTBF in a particular application.
1.E+06
1.E+09
1.E+10
2
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MRF20030R
6
MOTOROLA RF DEVICE DATA
Figure 10. Series Equivalent Input and Output Impedence
f
MHz
Z
in
(1)
Z
OL
*
1800
1850
1900
1950
4.5 + j7.0
4.5 + j4.6
4.5 + j6.0
3.7 + j2.4
4.7 + j2.4
4.4 + j1.6
3.4 + j1.2
3.3 + j1.6
Z
in
(1) = Conjugate of fixture base impedance.
Z
OL
* =
Conjugate of the optimum load impedance at
given output power, voltage, bias current and
frequency.
V
CC
= 26 V, I
CQ
= 125 mA, P
out
= 30 W (PEP)
+j1
+j2
+j3
+j5
+j0.5
+j0.2
-j1
-j2
-j3
-j5
-j10
-j0.5
-j0.2
+j10
0.0
0.5
1
2
3
5
Z
OL
*
Z
in
Z
o
= 10
1.9 GHz
f = 1.8 GHz
2000
3.5 + j1.5
3.5 + j2.0
1.95 GHz
1.85 GHz
0.2
1.95 GHz
2 GHz
1.85 GHz
f = 1.8 GHz
1.9 GHz
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MRF20030R
MOTOROLA RF DEVICE DATA
Table 1. Common Emitter SParameters at V
CE
= 24 Vdc, I
C
= 1.8 Adc
f
S
11
S
21
S
12
S
22
GHz
|S
11
|
f
|S
21
|
f
|S
12
|
f
|S
22
|
f
1.5
.964
158
.65
74
.046
60
.859
161
1.55
.960
156
.74
68
.047
56
.841
161
1.6
.952
155
.87
60
.049
53
.815
160
1.65
.933
153
1.05
50
.048
46
.787
161
1.7
.892
149
1.32
35
.047
40
.744
163
1.75
.804
149
1.64
13
.040
29
.719
168
1.8
.727
157
1.78
18
.026
21
.778
175
1.85
.787
163
1.50
50
.015
54
.883
174
1.9
.873
163
1.14
73
.020
81
.937
171
1.95
.921
160
.84
89
.026
88
.949
168
2
.941
157
.62
102
.031
93
.950
165
2.05
.943
155
.48
109
.036
93
.946
164
2.1
.940
153
.38
118
.040
92
.942
163
2.15
.928
151
.30
127
.042
97
.939
162
2.2
.917
150
.24
133
.049
99
.935
161
2.25
.907
150
.20
140
.056
101
.933
160
2.3
.888
148
.17
150
.066
100
.926
159
2.35
.861
148
.14
159
.077
98
.916
157
2.4
.853
149
.11
167
.087
92
.909
157
2.45
.860
146
.10
176
.095
89
.900
155
2.5
.880
146
.10
156
.119
84
.880
155
MRF20030R
8
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 395C01
ISSUE A
U
D
K
N
J
H
E
C
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.739
0.750
18.77
19.05
INCHES
B
0.240
0.260
6.10
6.60
C
0.165
0.198
4.19
5.03
D
0.215
0.225
5.46
5.72
E
0.055
0.070
1.40
1.78
H
0.079
0.091
2.01
2.31
J
0.004
0.006
0.10
0.15
K
0.210
0.240
5.33
6.10
N
0.315
0.330
8.00
8.38
Q
0.125
0.135
3.18
3.42
U
0.560 BSC
14.23 BSC
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
T
1
2
3
A
B
2 PL
Q
M
A
M
0.51 (0.020)
B
M
T
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals"
must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Opportunity/Affirmative Action Employer.
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