MRF5015

MOTOROLA RF DEVICE DATA

The RF MOSFET Line

RF Power Field Effect Transistor

NChannel EnhancementMode

Designed for broadband commercial and industrial applications at frequen-

cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for largesignal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.

Guaranteed Performance at 512 MHz, 12.5 Volts

Output Power -- 15 Watts
Power Gain -- 10 dB Min
Efficiency -- 50% Min

Characterized with Series Equivalent LargeSignal Impedance Parameters

SParameter Characterization at High Bias Levels

Excellent Thermal Stability

All Gold Metal for Ultra Reliability

Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive

Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

DrainSource Voltage

VDSS

Vdc

DrainGate Voltage (RGS = 1 M

)

VDGR

Vdc

GateSource Voltage

VGS

Vdc

Drain Current -- Continuous

Adc

Total Device Dissipation @ TC = 25

Derate above 25

0.29

Watts

Storage Temperature Range

Tstg

65 to +150

Operating Junction Temperature

200

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

3.5

C/W

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

DrainSource Breakdown Voltage (VGS = 0, ID = 5 mAdc)

V(BR)DSS

Vdc

Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0)

IDSS

mAdc

GateSource Leakage Current (VGS = 20 Vdc, VDS = 0)

IGSS

Adc

(continued)

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF5015/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF5015

15 W, 512 MHz, 12.5 VOLTS

NCHANNEL BROADBAND

RF POWER FET

CASE 31907, STYLE 3

Motorola, Inc. 1994

REV 6

MRF5015
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS -- continued

(TC = 25

C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 10 mAdc)

VGS(th)

1.25

2.3

3.5

Vdc

DrainSource OnVoltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on)

0.375

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 1 Adc )

gfs

1.2

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Ciss

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Coss

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Crss

8.8

10.8

FUNCTIONAL TESTS

(In Motorola Test Fixture)

CommonSource Amplifier Power Gain

(VDD = 12.5 Vdc, Pout = 15 W,

f = 512 MHz

IDQ = 100 mA)

f = 175 MHz

Gps

11.5

--
--

Drain Efficiency

(VDD = 12.5 Vdc, Pout = 15 W,

f = 512 MHz

IDQ = 100 mA)

f = 175 MHz

55
55

--
--

Load Mismatch

(VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,
Load VSWR = 20:1, All Phase Angles at Frequency of Test)

No Degradation in Output Power

B1, B2

Ferrite Bead, Fair Rite Products

C1, C13

F, 50 V, Electrolytic

C2, C12

0.1

F, Chip Capacitor

C3, C4, C10, C11

120 pF, Chip Capacitor

C5, C9

0 to 20 pF, Trimmer Capacitor

36 pF, Chip Capacitor

43 pF, Chip Capacitor

30 pF, Chip Capacitor

L1, L2

7 Turns, 24 AWG 0.116

N1, N2

Type N Flange Mount

1 k

, 1/4 W, Carbon

470 k

, 1/4 W, Carbon

160

, 0.1 W Chip

Z1, Z11

Transmission Line*

Z7, Z8

Transmission Line+

Transmission Line*

Z10

Transmission Line*

Board

Glass Teflon

0.060

+ Part of Capacitor Mount Socket
*See Photomaster

Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic

Input

VGG

Output

Z11

C10

Z10

VDD

C13

C11

C12

DUT

Socket

MRF5015

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

Typical Device Shown

VDS = 10 V

Typical Device Shown

VDD = 12.5 V
Pin = 1.5 W
f = 520 MHz

1 W

0.5 W

Pin = 1.5 W

IDQ = 100 mA
f = 520 MHz

VDD = 12.5 V
IDQ = 100 mA

520 MHz

470 MHz

f = 400 MHz

2.5

Figure 2. Output Power versus Input Power

Pin, INPUT POWER (WATTS)

Figure 3. Output Power versus Supply Voltage

VDD, SUPPLY VOLTAGE (VOLTS)

0.5

1.5

P out

, OUTPUT

POWER (W

TTS)

I D

, DRAIN CURRENT

(AMPS)

Figure 4. Output Power versus Gate Voltage

VGS, GATESOURCE VOLTAGE (VOLTS)

Figure 5. Drain Current versus Gate Voltage

VGS, GATESOURCE VOLTAGE (VOLTS)

0.8

1.8

1.6

0.2

0.4

0.6

1.2

1.4

P out

, OUTPUT

POWER (W

TTS)

P out

, OUTPUT

POWER (W

TTS)

ID = 1.5 A

ID = 0.25 A

ID = 0.05 A

VDD = 12.5 V

Coss

Ciss

Crss

VGS = 0
f = 1 MHz

Figure 6. Capacitance versus Voltage

200

VDS, DRAINSOURCE VOLTAGE (VOLTS)

100

150

Figure 7. GateSource Voltage

versus Case Temperature

1.04

0.94

TC, CASE TEMPERATURE (

1.03

1.01

0.99

1.02

C, CAP

ACIT

ANCE

(pF)

100

, GA

TE-SOURCE

VOL

T
AGE

(NORMALIZED)

1.00

0.98

0.96

0.95

0.97

125

150

175

ID = 0.5 A

ID = 1 A

MRF5015
4

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

Figure 8. DC Safe Operating Area

(MHz)

Zin

(

)

ZOL*

(

)

400

420

440

460

2.0 j6.1

1.6 j4.7

1.8 j5.3

1.5 j4.2

1.3 j0.4

1.4 j0.4

1.5 j0.4

1.5 j0.3

VDD = 12.5 V, IDQ = 100 mA, Pout = 15 W

480

1.4 j3.8

1.5 j0.2

500

1.3 j3.6

1.4 j0.1

520

1.2 j3.5

1.3 + j0.1

Zin

= Conjugate of source impedance with

parallel 160

resistor and 36 pF capacitor

in series with gate.

ZOL* = Conjugate of the load impedance at given

output power, voltage and frequency that
produces maximum gain.

Figure 9. Series Equivalent Input and Output Impedance

VDS, DRAINSOURCE VOLTAGE (VOLTS)

0.1

100

I D

, DRAIN CURRENT

(AMPS)

TC = 25

Zin

f = 400 MHz

ZOL*

f = 400 MHz

Zo = 10

520

460

520

460

MRF5015

MOTOROLA RF DEVICE DATA

Table 1. Common Source Scattering Parameters (VDS = 12.5 V)

ID = 50 mA

S11

S21

S12

S22

MHz

|S11|

|S21|

|S12|

|S22|

100
200
300
400
500
700
850

1000

0.63
0.62
0.70
0.78
0.84
0.88
0.93
0.95
0.96

123
142
152
157
162
165
171
175
178

8
4

1.8
1.1

0.70
0.49
0.28
0.20
0.15

100

82
61
47
36
28
17
13
10

0.063
0.063
0.056
0.046
0.037
0.029
0.016
0.010
0.007

23
35
42
46
45
31

0.79
0.82
0.86
0.90
0.93
0.94
0.97
0.97
0.98

149
162
169
171
174
175
179

179
178

ID = 100 mA

S11

S21

S12

S22

MHz

|S11|

|S21|

|S12|

|S22|

100
200
300
400
500
700
850

1000

0.67
0.66
0.71
0.77
0.82
0.86
0.91
0.93
0.95

136
153
160
163
165
168
173
176
179

9.1
4.6
2.2
1.3

0.89
0.64
0.37
0.27
0.20

99
84
66
54
44
36
25
20
16

0.047
0.048
0.043
0.037
0.031
0.025
0.015
0.010
0.009

10
3

26
32
35
30

0.82
0.85
0.87
0.90
0.92
0.94
0.96
0.97
0.98

158
168
172
174
175
177
179

179
177

ID = 500 mA

S11

S21

S12

S22

MHz

|S11|

|S21|

|S12|

|S22|

100
200
300
400
500
700
850

1000

0.81
0.81
0.82
0.84
0.86
0.88
0.91
0.93
0.94

150
164
170
173
174
175
178

180
178

11.1

5.6
2.7
1.7
1.2

0.92
0.57
0.43
0.33

98
86
73
63
55
47
35
29
23

0.027
0.027
0.025
0.023
0.020
0.018
0.013
0.013
0.014

5
9
9
7

26
44

0.85
0.87
0.88
0.89
0.91
0.92
0.94
0.95
0.96

168
174
176
177
178
179

180
178
177

ID = 2.5 A

S11

S21

S12

S22

MHz

|S11|

|S21|

|S12|

|S22|

100
200
300
400
500
700
850

1000

0.86
0.85
0.86
0.87
0.89
0.91
0.93
0.94
0.95

144
161
170
173
175
176
179

179
177

10.1

5.2
2.5
1.6
1.1

0.84
0.52
0.39
0.30

101

88
74
64
55
48
37
30
26

0.022
0.022
0.021
0.019
0.017
0.015
0.013
0.014
0.016

4
2

22
39
52

0.85
0.87
0.89
0.90
0.91
0.93
0.95
0.96
0.96

171
175
177
178
178
179

179
178
176

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