MRF5P21180

MOTOROLA RF DEVICE DATA

The RF SubMicron MOSFET Line

RF Power Field Effect Transistor

NChannel EnhancementMode Lateral MOSFET

Designed for WCDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCNPCS/cellular radio and WLL applications.
· Typical 2carrier WCDMA Performance for V

= 28 Volts,

= 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz,

Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1

MHz

and

f2 + 5 MHz. Distortion Products

Measured over a 3.84 MHz BW @ f1

10 MHz and

f2 + 10 MHz,

Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Output Power -- 38 Watts Avg.
Power Gain -- 14 dB
Efficiency -- 25.5%

IM3 -- 37.5 dBc
ACPR -- 41 dBc

· Internally Matched, Controlled Q, for Ease of Use
· High Gain, High Efficiency and High Linearity
· Integrated ESD Protection
· Designed for Maximum Gain and Insertion Phase Flatness
· Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW

Output Power

· Excellent Thermal Stability
· Characterized with Series Equivalent LargeSignal Impedance Parameters
· Qualified Up to a Maximum of 32 V

Operation

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

DrainSource Voltage

DSS

Vdc

GateSource Voltage

0.5, +15

Vdc

Total Device Dissipation @ T

= 25

°C

Derate above 25

°C

437.5

2.5

Watts

°C

Storage Temperature Range

stg

65 to +150

°C

Operating Junction Temperature

200

°C

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF5P21180/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF5P21180

2170 MHz, 180 W AVG.,

2 x WCDMA, 28 V

LATERAL NCHANNEL

RF POWER MOSFET

CASE 375D04, STYLE 1

NI1230

Motorola, Inc. 2002

REV 0

MRF5P21180
2

MOTOROLA RF DEVICE DATA

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

Case Temperature 80

°C, 180 W CW

Case Temperature 80

°C, 38 W CW

0.40
0.40

°C/W

ELECTRICAL CHARACTERISTICS

= 25

°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Zero Gate Voltage Drain Leakage Current

= 65 Vdc, V

= 0 Vdc)

DSS

µAdc

Zero Gate Voltage Drain Leakage Current

= 28 Vdc, V

= 0)

DSS

µAdc

GateSource Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

µAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

= 10 Vdc, I

= 200

µAdc)

GS(th)

2.5

2.8

3.5

Vdc

Gate Quiescent Voltage

= 28 Vdc, I

= 800 mAdc)

GS(Q)

3.6

Vdc

DrainSource OnVoltage

= 10 Vdc, I

= 2 Adc)

DS(on)

0.26

0.3

Vdc

Forward Transconductance

= 10 Vdc, I

= 2 Adc)

DYNAMIC CHARACTERISTICS (1)

Reverse Transfer Capacitance

= 28 Vdc

± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

1.7

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2carrier WCDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

CommonSource Amplifier Power Gain

= 28 Vdc, P

out

= 38 W Avg., I

= 2 x 800 mA,

f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)

12.5

Drain Efficiency

= 28 Vdc, P

out

= 38 W Avg., I

= 2 x 800 mA,

f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)

25.5

Third Order Intermodulation Distortion

= 28 Vdc, P

out

= 38 W Avg., I

= 2 x 800 mA,

f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 10 MHz
and f2 +10 MHz referenced to carrier channel power.)

IM3

37.5

dBc

Adjacent Channel Power Ratio

= 28 Vdc, P

out

= 38 W Avg., I

= 2 x 800 mA,

f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 5 MHz
and f2 +5 MHz.)

ACPR

dBc

Input Return Loss

= 28 Vdc, P

out

= 38 W Avg., I

= 2 x 800 mA,

f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)

IRL

(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in pushpull configuration.

MRF5P21180

MOTOROLA RF DEVICE DATA

Figure 1. MRF5P21180 Test Circuit Schematic

Z1, Z22

1.000

x 0.066 Microstrip

Z2, Z21

0.760

x 0.113 Microstrip

Z3, Z20

0.068

x 0.066 Microstrip

Z4, Z19

1.672

x 0.066 Microstrip

Z5, Z6

0.318

x 0.066 Microstrip

Z7, Z8

0.284

x 0.180 Microstrip

C23

C13

C11

Z11

INPUT

Z10

Z12

C24

C14

C12

Z15

Z16

C19

C20

C16

C18

+ V

C10

C21

C22

C15

C17

+ V

Z13

Z17

Z19

Z14

Z18

Z20

Z21

Z22

OUTPUT

DUT

Z9, Z10

0.256

x 0.650 Microstrip

Z11, Z12

1.030

x 0.035 Microstrip

Z13, Z14

0.500

x 0.650 Microstrip

Z15, Z16

0.550

x 0.058 Microstrip

Z17, Z18

0.353

x 0.066 Microstrip

PCB

Taconic RF35, 0.76 mm,

= 3.5

Table 1. MRF5P21180 Test Circuit Component Designations and Values

Part

Description

Value, P/N or DWG

Manufacturer

C1, C2, C3, C4

30 pF Chip Capacitors

100B300JCA500X

ATC

C5, C6, C7, C8

5.6 pF Chip Capacitors

100B5R6JCA500X

ATC

C9, C10

µF Tantalum Capacitors

T495X106K035AS4394

Kemet

C11, C12

1000 pF Chip Capacitors

100B102JCA500X

ATC

C13, C14, C15, C16

0.1

µF Chip Capacitors

CDR33BX104AKWS

Kemet

C17, C18, C19, C20,
C21, C22

µF Tantalum Capacitors

T491X226K035AS4394

Kemet

C23, C24

1.0

µF Tantalum Capacitors

T491C105M050

Kemet

R1, R2, R3, R4

W, 1/8 W Chip Resistors

1.0 k

W, 1/8 W Chip Resistor

WB1, WB2, WB3, WB4

Wear Blocks

5 x 180 x 500 mil Brass Shim

Motorola

MRF5P21180

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

2200

2080

-45

IRL

ACPR

IM3

f, FREQUENCY (MHz)

Figure 3. 2Carrier WCDMA Broadband Performance

, POWER GAIN (dB)

= 28 Vdc, P

out

= 38 W (Avg.), I

= 1600 mA

2-Carrier W-CDMA, 10 MHz Carrier Spacing

3.84 MHz Channel Bandwidth

Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)

IM3 (dBc),

ACPR (dBc)

, DRAIN

-30

-10
-15
-20
-25

INPUT

RETURN LOSS (dB)

IRL,

EFFICIENCY

(%)

-35

-20

-25

-30

-35

-40

2100

2120

2140

2160

2180

300

12.5

= 2400 mA

2000 mA

out

, OUTPUT POWER (WATTS) PEP

Figure 4. TwoTone Power Gain versus

Output Power

, POWER GAIN (dB)

= 28 Vdc

f1 = 2135 MHz, f2 = 2145 MHz

Two-Tone Measurement, 10 MHz Tone Spacing

800 mA

1600 mA

1200 mA

14.5

13.5

80 100

200

300

-50

-20

= 800 mA

2400 mA

out

, OUTPUT POWER (WATTS) PEP

Figure 5. Third Order Intermodulation Distortion

versus Output Power

IM3,

THIRD ORDER

INTERMODULA

TION DIST

TION (dBc)

= 28 Vdc

f1 = 2135 MHz, f2 = 2145 MHz

Two-Tone Measurement, 10 MHz Tone Spacing

-25

-30

-35

-40

-45

80 100

200

2000 mA

1200 mA

1600 mA

-60

-20

0.1

7th Order

TWO-TONE SPACING (MHz)

Figure 6. Intermodulation Distortion Products

versus Tone Spacing

INTERMODULA

TION DIST

TION (dBc)

IMD,

= 28 Vdc, P

out

= 170 W (PEP), I

= 1600 mA

Two-Tone Measurements, Center Frequency = 2140 MHz

-25

-30

-35

-40

-45

-50

-55

5th Order

3rd Order

Actual

P3dB = 53.72 dBm (236 W)

, INPUT POWER (dBm)

Figure 7. Pulse CW Output Power versus

Input Power

P out

, OUTPUT

POWER (dBm)

= 28 Vdc, I

= 1600 mA

Pulsed CW, 5 µsec (on), 1 msec (off)

Center Frequency = 2140 MHz

Ideal

P1dB = 52.99 dBm (199 W)

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