1
MRF8372R1, R2
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in 800 MHz
and UHF frequency ranges.
Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 750 mW
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)
StateoftheArt Technology
Fine Line Geometry
Gold Top Metal and Wires
Silicon Nitride Passivated
Ion Implanted Arsenic Emitters
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order MRF8372 in tape and reel packaging by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
16
Vdc
CollectorBase Voltage
VCBO
36
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current -- Continuous
IC
200
mAdc
Total Device Dissipation @ TC = 75
C (1)
Derate above 75
C
PD
1.67
22.2
Watts
mW/
C
Storage Temperature Range
TJ, Tstg
55 to +150
C
Maximum Junction Temperature
TJmax
150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
45
C/W
DEVICE MARKING
MRF8372 = 8372
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MRF8372/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF8372R1, R2
750 mW, 870 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 75105, STYLE 1
SORF (SO8)
Motorola, Inc. 1997
(Replaces MRF837/D)
MRF8372R1, R2
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
16
--
--
Vdc
CollectorEmitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25
C)
ICES
--
--
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
90
200
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
1.8
2.5
pF
FUNCTIONAL TESTS
CommonEmitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)
Gpe
8.0
10
--
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)
55
60
--
%
3
MRF8372R1, R2
MOTOROLA RF DEVICE DATA
Figure 1. 800 900 MHz Broadband Circuit
C1, C5 -- 0.8 8.0 pF Johanson Gigatrim
C2, C3 -- 10 pF Ceramic Chip Capacitor
C6 -- 91 pF Clamped Mica, MiniUnderwood
C4 -- 47 pF Ceramic Chip Capacitor
C7 -- 91 pF Clamped Mica, MiniUnderwood
C8 -- 1.0
F 25 V Tantalum
B -- Bead, Ferroxcube 5659065/3B
L1, L2 -- 4 Turns, #21 AWG, 5/32
ID
L3 -- 7 Turns, #21 AWG, 5/32
ID
Z1, Z2 -- 1
x 0.078
Microstrip, Zo = 50 Ohms
Z3 -- 0.25
x 0.078
Microstrip, Zo = 50 Ohms
Z4 -- 0.15
x 0.078
Microstrip, Zo = 50 Ohms
Z5 -- 0.30
x 0.078
Microstrip, Zo = 50 Ohms
Z6 -- 1.63
x 0.078
Microstrip, Zo = 50 Ohms
PCB -- 1/32
Glass Teflon,
r = 2.56
L3
Z6
Z5
Z1
Z2
Z3
Z4
DUT
C4
C1
C2
C3
L1
L2
C6
C7
C8
C5
B
VCC
+
B
+
800/900 MHz BAND DATA
Figure 2. Typical Broadband Performance
12
10
8
6
4
2
820
840
860
880
900
800
f, FREQUENCY (MHz)
70
60
50
10
15
20
25
EFFICIENCY
(%)
IRL, INPUT
RETURN LOSS (dB)
Pout = 750 mW
VCC = 12.5 Vdc
GPE
c
IRL
G
PE
, GAIN (dB)
c
, COLLECT
OR
MRF8372R1, R2
4
MOTOROLA RF DEVICE DATA
f
Zin
Ohms
ZOL*
Ohms
f
VCC = 7.5 V
VCC = 12.5 V
VCC = 7.5 V
VCC = 12.5 V
f
Frequency
MHz
Pin = 150 mW
Pin = 100 mW
Pout = 806 MHz = 820 mW
Pout = 870 MHz = 635 mW
Pout = 960 MHz = 530 mW
Pout = 806 MHz = 1.05 mW
Pout = 870 MHz = 855 mW
Pout = 960 MHz = 580 mW
806
8.0 + j1.9
4.0 + j1.2
24.7 j19.2
20.9 j31.0
870
5.2 + j3.5
6.0 + j1.9
36.9 j20.5
32.1 j26.6
960
6.8 + j4.0
6.1 + j2.5
39.3 j18.5
36.3 j25.7
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency.
Table 1. Series Equivalent Input/Output Impedance
TYPICAL CHARACTERISTICS
800/900 MHz BAND DATA (continued)
Figure 3. Output Power versus Input Power
f = 870 MHz
Figure 4. Output Power versus Frequency
VCC = 7.5 Vdc
Figure 5. Output Power versus Collector Voltage
Figure 6. Output Power versus Frequency
P
, OUTPUT
POWER
(mW)
out
1200
900
600
300
0
6
8
10
12
14
16
VCC, COLLECTOR VOLTAGE (Vdc)
VCC = 12.5 Vdc
7.5 Vdc
100 mW
Pin = 150 mW
50 mW
100 mW
Pin = 150 mW
50 mW
100 mW
Pin = 150 mW
50 mW
P
, OUTPUT
POWER
(mW)
out
1000
500
0
800
820
840
860
880
900
920
940
960
f, FREQUENCY (MHz)
P
, OUTPUT
POWER
(mW)
out
1600
800
400
0
800
820
840
860
880
900
920
940
960
f, FREQUENCY (MHz)
1200
P
, OUTPUT
POWER
(mW)
out
1200
900
600
300
0
0
30
60
90
120
150
Pin, INPUT POWER (mW)
15
45
75
105
135
f = 870 MHz
VCC = 12.5 Vdc
5
MRF8372R1, R2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
800/900 MHz BAND DATA (continued)
Figure 7. Output Power versus Input Power
Figure 8. Output Power versus Frequency
Figure 9. Output Power versus Collector Voltage
Figure 10. Output Power versus Frequency
P
, OUTPUT
POWER
(mW)
out
1600
0
0
Pin, INPUT POWER (mW)
1400
1200
1000
800
600
400
200
10
VCC = 12.5 Vdc
7.5 Vdc
20
30
40
50
60
70
80
P
, OUTPUT
POWER
(mW)
out
1200
f, FREQUENCY (MHz)
400
1000
800
600
400
200
0
420
440
460
480
500
520
Pin = 75 mW
50 mW
25 mW
P
, OUTPUT
POWER
(mW)
out
0
6
VCC, COLLECTOR VOLTAGE (Vdc)
1400
1200
1000
800
600
400
200
10
12
14
16
8
Pin = 75 mW
50 mW
25 mW
P
, OUTPUT
POWER
(mW)
out
1500
f, FREQUENCY (MHz)
400
1300
1100
900
700
600
300
420
440
460
480
500
520
Pin = 75 mW
50 mW
25 mW
f = 512 MHz
VCC = 7.5 Vdc
VCC = 12.5 Vdc
f = 512 MHz
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