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Электронный компонент: MRF891

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MRF891 MRF891S
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistors
. . . designed for 24 volt UHF largesignal, commonemitter amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
800 960 MHz.
Specified 24 Volt, 900 MHz Characteristics
Output Power = 5.0 Watts
Power Gain = 9.0 dB Min
Efficiency = 50% Min
Series Equivalent LargeSignal Characterization
Capable of Withstanding 20:1 VSWR Load Mismatch at Rated Output
Power and Supply Voltage
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Silicon Nitride Passivated
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
30
Vdc
CollectorEmitter Voltage
VCES
55
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current -- Continuous
IC
0.6
Adc
Total Device Dissipation @ TA = 50
C (1)
Derate above 50
C
PD
18
0.143
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
JC
7.0
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
30
--
--
Vdc
CollectorEmitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CES
55
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 0.5 mAdc, IC = 0)
V(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25
C)
ICES
--
--
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
hFE
30
--
150
--
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF891/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF891
MRF891S
5.0 W, 900 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 31907, STYLE 2
MRF891
CASE 319A02, STYLE 2
MRF891S
Motorola, Inc. 1994
REV 6
MRF891 MRF891S
212
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
6.5
8.0
pF
FUNCTIONAL TESTS
CommonEmitter Amplifier Power Gain (Broadband)
(VCC = 24 Vdc, Pout = 5.0 W, f = 900 MHz)
Gpe
9.0
10
--
dB
Collector Efficiency
(VCC = 24 Vdc, Pout = 5.0 W, f = 900 MHz)
50
57
--
%
Load Mismatch Stress
(VCC = 24 Vdc, Pin = 0.63 W, f = 900 MHz,
VSWR = 20:1, all phase angles)
No Degradation in Output Power
Figure 1. Broadband Test Fixture
C1 -- 39 pF, 100 Mil Chip Capacitor
C2, C8, C15 -- 0.8 8.0 pF Johansen Gigatrim
C3, C4 -- 12 pF, MiniUnelco
C5, C13 -- 1000 pF, 350 V Unelco
C6, C14 -- 10
F, 25 V Tantalum
C7, C11, C12 -- 91 pF, MiniUnelco
C9 -- 5.0 pF, MIniUnelco
C10 -- 47 pF, 100 Mil Chip Capacitor
L1, L6 -- 10 Turns #20 AWG Around 10 Ohm 1/2 Watt Resistor
L2, L5 -- Ferrite Bead
L3 -- 4 Turns #16 AWG Choke
L4 -- 0.5
, #18 AWG Wire
T1, T4 -- 50 Ohm Microstrip Line
T2 -- W = 165 Mils, = 1946 Mils
T3 -- W = 166 Mils, = 1563 Mils
PC Board -- 0.031
Glass Teflon (
r = 2.56)
SHORTED
PLUG
(FOR
VRE
TEST)
+ VCC
GND
0.685
DUT
SOCKETS
+
+
C1
C11
T1
T2
T3
T4
C6
C5
L1
L2
C7
L3
C2
C4
C3
C9
L5
L6
C12
C13
C14
C15
C10
C8
L4
213
MRF891 MRF891S
MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
Figure 4. Output Power versus Frequency
Figure 5. Typical Broadband Circuit Performance
Figure 6. Series Equivalent Input Impedance
Figure 7. Series Equivalent Output Impedance
8
0
Pin, INPUT POWER (WATTS)
7
0.1
VCC = 24 Vdc
6
5
4
4
3
2
2
1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
900 MHz
960 MHz
850 MHz
P
, OUTPUT
POWER (W
A
TTS)
out
8
Pin, INPUT POWER (WATTS)
6
4
2
P
, OUTPUT
POWER (W
A
TTS)
out
8
VCC, SUPPLY VOLTAGE (VOLTS)
18
6
20
22
24
26
28
Pin = 1 W
f = 900 MHz
8
7
6
5
4
3
2
1
0
P
, OUTPUT
POWER (W
A
TTS)
out
8
f, FREQUENCY (MHz)
850
875
900
925
950
Pin = 1 W
0.6 W
VCC = 24 Vdc
8
7
6
5
4
3
2
1
0
P
, OUTPUT
POWER (W
A
TTS)
out
f, FREQUENCY (MHz)
850
875
900
925
950
Pin = 0.6 W
VCC = 24 Vdc
c
, COLLECT
OR EFFICIENCY
60%
50%
2.0:1
1.6:1
1.2:1
Pout
c
INPUT VSWR
VSWR
0.2 W
0.6 W
0.2 W
f = 850 MHz
ZOL*
Zin
900
f = 850 MHz
960
900
960
Zo = 10
ZOL* = Conjugate of the optimum load
impedance into which the device output
operates at a given output power ,
voltage and frequency.
VCC = 24 Vdc, Pout = 5.0 W, Eff > 50%
f
MHz
ZOL*
Ohms
850
900
960
8.34 j13.2
9.1 j13.8
10.4 j14.6
VCC = 24 Vdc, Pout = 5.0 W, Eff > 50%
f
MHz
Zin
Ohms
850
900
960
1.1 + j3.0
1.0 + j3.25
1.18 + j3.5
MRF891 MRF891S
214
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 31907
ISSUE M
MRF891
0.965
0.355
0.230
0.115
0.102
0.075
0.160
0.004
0.090
0.225
0.125
0.985
0.375
0.260
0.125
0.114
0.085
0.170
0.006
0.110
0.241
0.135
24.52
9.02
5.85
2.93
2.59
1.91
4.07
0.11
2.29
5.72
3.18
25.01
9.52
6.60
3.17
2.90
2.15
4.31
0.15
2.79
6.12
3.42
M
M
MIN
MIN
MAX
MAX
INCHES
MILLIMETER
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.725 BSC
18.42 BSC
SEATING
PLANE
IDENTIFICATION
NOTCH
1
2
3
4
5
6
F
J
B
H
E
K
L
0.15 (0.006)
T A
N
M
-A-
-N-
-T-
Q
2 PL
D
2 PL
M
M
0.38 (0.015)
T
A
N
M
M
M
0.38 (0.015)
T
A
N
M
C
PIN 1. EMITTER (COMMON)
2. BASE (INPUT)
3. EMITTER (COMMON)
4. EMITTER (COMMON)
5. COLLECTOR (OUTPUT)
6. EMITTER (COMMON)
STYLE 2:
CASE 319A02
ISSUE B
MRF891S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. EMITTER
5. COLLECTOR
6. EMITTER
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.355
0.365
9.02
9.27
B
0.225
0.235
5.72
5.96
C
0.110
0.125
2.80
3.17
D
0.115
0.125
2.93
3.17
F
0.075
0.085
1.91
2.15
H
0.035
0.045
0.89
1.14
J
0.004
0.006
0.11
0.15
K
0.090
0.110
2.29
2.79
IDENTIFICATION
NOTCH
SEATING
PLANE
6
5
4
1
2
3
A
K
B
D
F
C
J
H
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF891/D
*MRF891/D*