1
MRF897
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF largesignal, common emitter, classAB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800 970 MHz.
Specified 24 Volt, 900 MHz Characteristics
Output Power = 30 Watts
Minimum Gain = 10 dB @ 900 MHz, classAB
Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)
Maximum Intermodulation Distortion 30 dBc @ 30 Watts (PEP)
Characterized with Series Equivalent LargeSignal Parameters from 800
to 960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power
Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
30
Vdc
CollectorEmitter Voltage
VCES
60
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
CollectorCurrent -- Continuous
IC
4.0
Adc
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
105
0.60
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.67
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
V(BR)CEO
30
33
--
Vdc
CollectorEmitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
V(BR)CES
60
80
--
Vdc
EmitterBase Breakdown Voltage (IE = 5 mAdc, IC = 0)
V(BR)EBO
4.0
4.7
--
Vdc
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0)
ICES
--
--
10.0
mAdc
ON CHARACTERISTICS
DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc)
hFE
30
80
120
--
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz)
Cob
14
21
28
pF
(continued)
Order this document
by MRF897/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF897
30 W, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 395B01, STYLE 1
Motorola, Inc. 1994
REV 6
MRF897
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL CHARACTERISTICS
CommonEmitter Amplifier Power Gain
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,
f2 = 900.1 MHz)
Gpe
10.0
12.0
--
dB
Collector Efficiency
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,
f2 = 900.1 MHz)
35
38
--
%
Intermodulation Distortion
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,
f2 = 900.1 MHz)
IMD
--
37
30
dBc
Output Mismatch Stress
(VCC = 26 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,
f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles))
No Degradation in Output Power
Before and After Test
Figure 1. MRF897 Broadband Test Circuit
B1, B2, B3, B4 -- Ferrite Bead, Fair Rite #2743019447
C1 -- 0.8 8.0 pF Trimmer Capacitor, Johanson
C2, C3, C23, C24 -- 43 pF, 100 mil, ATC Chip Capacitor
C4, C5, C18, C19, C21, C22 -- 820 pF, 100 mil, Chip Capacitor, Kemet
C6, C7, C11, C12 -- 10
F, Lytic Capacitor, Panasonic
C8, C9, C16, C17 -- 100 pF, 100 mil, Chip Capacitor, Murata Erie
C10 -- 13 pF, 50 mil, ATC Chip Capacitor
C13, C14 -- 250
F Lytic Capacitor, Mallory
C15 -- 1.1 pF, 50 mil, ATC Chip Capacitor
C20 -- 6.8 pF, 100 mil, ATC Chip Capacitor
L1, L2, L3, L4, L5, L6 -- 5 Turns 20 AWG, IDIA 0.126
choke
N1, N2 -- Type N Flange Mount, Omni Spectra 3052164810
Q1 -- Bias Transistor BD136 PNP
R1, R12 -- 39 Ohm, 2.0 W
R3, R4, R5, R6 -- 4.0 x 39 Ohm, 1/8 W, Chips in Parallel,
R3, R4, R5, R6 --
Rohm 390J
TL1 TL11 -- See Photomaster
Balun1, Balun2, Coax 1, Coax 2 -- 2.20
50 Ohm, 0.088
o.d.
Balun1, Balun2, Coax 1, Coax 2 --
semirigid coax, Micro Coax
Balun1, Balun2, Coax 1, Coax 2 --
UT85M17
Board -- 1/32
Glass Teflon, Arlon GX03005522,
r = 2.55
COAX 1
BALUN 1
INPUT
OUTPUT
BALUN 2
COAX 2
VCC
VCC
VBB
VBB
TL2
TL1
C1
C2
C3
TL4
TL3
TL5
TL6
C10
L1
L2
B2
C9
R4
C5
R2
Q2
C7
+
L4
D.U.T.
C8
L3
C6
Q1
R1
+
R3
C4
B1
C11
C13
C18
+
+
L5
R5
C21
TL9
B3
L7
C16
TL7
TL8
C15
C20
C23
C24
TL11
TL10
L8
B4
C22
L6
C17
R6
C12
C14
C19
+
+
3
MRF897
MOTOROLA RF DEVICE DATA
, EFFICIENCY
(%)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage
Figure 5. Intermodulation versus Output Power
2.5
3.0
0.0
1.0
0.5
1.5
2.0
45
40
35
30
15
0
5
10
25
20
f = 800 MHz
900 MHz
960 MHz
VCC = 24 Vdc
Icq = 125 mA
PIN, INPUT POWER (WATTS)
P
45
40
35
30
15
0
5
10
25
20
1.5 W
1 W
0.5 W
VCC = 24 Vdc
Icq = 125 mA
f, FREQUENCY (MHz)
2 W
2.5 W
PIN = 3 W
800
820
840
880
920
960
860
900
940
45
40
35
30
15
0
5
10
25
20
1.5 W
0.5 W
VCC, SUPPLY VOLTAGE (VOLTS)
PIN = 2.5 W
14
16
18
22
26
30
20
24
28
Figure 6. Power Gain versus Output Power
Figure 7. Broadband Test Fixture Performance
10
0.01
1
0.1
14.0
13.5
13.0
12.5
12.0
9.0
10.5
11.5
11.0
10.0
9.5
Po, OUTPUT POWER, (WATTS)
300 mA
250 mA
200 mA
125 mA
Icq = 400 mA
G , POWER GAIN (dB)
PE
890
900
840
850
860
870
880
12
11
10
9
8
6
7
50
45
40
35
30
20
25
GPE
POUT = 30 W (PEP)
VCC = 24 Vdc
Icq = 125 mA
f, FREQUENCY (MHz)
G , POWER GAIN (dB)
PE
1.0
1.5
2.0
INPUT
VSWR
o
, OUTPUT
POWER (W
A
TTS)
INPUT VSWR
f = 900 MHz
VCC = 24 Vdc
Icq = 125 mA
f = 900 MHz
Icq = 125 mA
25
30
35
40
55
70
65
60
45
50
5TH
Po, OUTPUT POWER (WATTSPEP)
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
3RD ORDER
0
5
10
20
30
15
25
f1 = 900 MHz
f2 = 900.1 MHz
VCC = 24 Vdc
Icq = 125 mA
35
7TH
P o
, OUTPUT
POWER (W
A
TTS)
P o
, OUTPUT
POWER (W
A
TTS)
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