1
MRF9030R1 MRF9030SR1
MOTOROLA RF DEVICE DATA
The RF SubMicron MOSFET Line
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for largesignal, commonsource amplifier applications in
26 volt base station equipment.
Typical TwoTone Performance at 945 MHz, 26 Volts
Output Power -- 30 Watts PEP
Power Gain -- 19 dB
Efficiency -- 41.5%
IMD -- 32.5 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent LargeSignal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
68
Vdc
GateSource Voltage
V
GS
0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
C
MRF9030R1
Derate above 25
C
P
D
92
0.53
Watts
W/
C
Total Device Dissipation @ T
C
= 25
C
MRF9030SR1
Derate above 25
C
P
D
117
0.67
Watts
W/
C
Storage Temperature Range
T
stg
65 to +200
C
Operating Junction Temperature
T
J
200
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF9030R1
MRF9030SR1
R
JC
1.9
1.5
C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9030/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF9030R1
MRF9030SR1
945 MHz, 30 W, 26 V
LATERAL NCHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B05, STYLE 1
NI360
MRF9030R1
CASE 360C05, STYLE 1
NI360S
MRF9030SR1
Motorola, Inc. 2002
REV 2
MRF9030R1 MRF9030SR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
GateSource Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
Adc)
V
GS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 250 mAdc)
V
GS(Q)
--
3.8
--
Vdc
DrainSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 0.7 Adc)
V
DS(on)
--
0.19
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
--
3
--
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 26 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
--
49.5
--
pF
Output Capacitance
(V
DS
= 26 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
--
26.5
--
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1
--
pF
(continued)
3
MRF9030R1 MRF9030SR1
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
TwoTone CommonSource Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
G
ps
18
19
--
dB
TwoTone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
37
41.5
--
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
--
32.5
28
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
--
15.5
9
dB
TwoTone CommonSource Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
G
ps
--
19
--
dB
TwoTone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
--
41.5
--
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
--
33
--
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
--
14
--
dB
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
P
1dB
--
30
--
W
CommonSource Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
G
ps
--
19
--
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
--
60
--
%
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
No Degradation In Output Power
MRF9030R1 MRF9030SR1
4
MOTOROLA RF DEVICE DATA
Z11
C17
Figure 1. 945 MHz Broadband Test Circuit Schematic
RF
INPUT
RF
OUTPUT
Z1
Z2
V
GG
C1
L1
V
DD
B1
Short Ferrite Bead
B2
Long Ferrite Bead
C1, C8, C13, C14
47 pF Chip Capacitors, B Case
C2, C4
0.8 pF to 8.0 pF Trim Capacitors
C3
3.9 pF Chip Capacitor, B Case
C5, C6
7.5 pF Chip Capacitors, B Case
C7, C15, C16
10
F, 35 V Tantalum Capacitors
C9, C10
10 pF Chip Capacitors, B Case
C11
9.1 pF Chip Capacitor, B Case
C12
0.6 pF to 4.5 pF Trim Capacitor
C17
220
F, 50 V Electrolytic Capacitor
L1, L2
12.5 nH Surface Mount Inductors
Z1
0.260
x 0.060 Microstrip
Z2
0.240
x 0.060 Microstrip
Z3
0.500
x 0.100 Microstrip
Z4
0.215
x 0.270 Microstrip
Z5
0.315
x 0.270 Microstrip
Z6
0.160
x 0.270 x 0.520, Taper
Z7
0.285
x 0.520 Microstrip
Z8
0.140
x 0.270 Microstrip
Z9
0.450
x 0.270 Microstrip
Z10
0.250
x 0.060 Microstrip
Z11
0.720
x 0.060 Microstrip
Z12
0.490
x 0.060 Microstrip
Z13
0.290
x 0.060 Microstrip
Board
Taconic RF350300,
(
r
= 3.5) CAX1/CAX1
Z3
Z8
Z9
Z7
Z5
Z6
L2
B2
Z4
Z10
C15
Figure 2. 945 MHz Broadband Test Circuit Component Layout
B1
C1
C2
C3
C5
C7
C8
C9
C10
C6
C11
C12
C13
C14
C15 C16
C17
L1
L2
Rev-02
900 MHz
MRF9030
C7
C2
C5
C16
C9
Z12
Z13
C4
C13
CUT
OUT
AREA
+
+
+
+
DUT
C8
C14
C3
C4
C6
C10
C11
C12
V
GG
V
DD
RF INPUT
RF OUTPUT
5
MRF9030R1 MRF9030SR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
960
12
20
930
-38
50
IRL
G
ps
IMD
V
DD
= 26 Vdc
P
out
= 30 W (PEP)
I
DQ
= 250 mA
Two-Tone, 100 kHz Tone Spacing
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
G
ps
, POWER GAIN (dB)
INTERMODULA
TION DIST
OR
TION (dBc)
IMD,
, DRAIN EFFICIENCY
(%)
19
45
18
40
17
35
16
-30
15
-32
14
-34
13
-36
955
950
945
940
935
-18
-10
-12
-14
-16
INPUT
RETURN LOSS (dB)
IRL,
100
17
20
1
I
DQ
= 375 mA
300 mA
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
19.5
19
18.5
18
17.5
10
250 mA
200 mA
100
-60
-50
1
I
DQ
= 200 mA
300 mA
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
INTERMODULA
TION DIST
OR
TION (dBc)
IMD,
-20
-30
-40
10
375 mA
250 mA
100
-70
0
1
3rd Order
V
DD
= 26 Vdc
I
DQ
= 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION DIST
OR
TION (dBc)
IMD,
10
-10
-20
-30
-40
-50
-60
5th Order
7th Order
100
10
22
0.1
0
60
G
ps
V
DD
= 26 Vdc
I
DQ
= 250 mA
f = 945 MHz
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
G
ps
, POWER GAIN (dB)
, DRAIN EFFICIENCY
(%)
20
50
18
40
16
30
14
20
12
10
10
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