1
MRF9045MR1 MRF9045MBR1
MOTOROLA RF DEVICE DATA
The RF SubMicron MOSFET Line
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for largesignal, commonsource amplifier applications in
28 volt base station equipment.
Typical Performance at 945 MHz, 28 Volts
Output Power -- 45 Watts PEP
Power Gain -- 19 dB
Efficiency -- 41% (Two Tones)
IMD -- 31 dBc
Integrated ESD Protection
Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent LargeSignal Impedance Parameters
DualLead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
TO272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
TO270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
65
Vdc
GateSource Voltage
V
GS
+15, 0.5
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
177
1.18
Watts
W/C
Storage Temperature Range
T
stg
65 to +150
C
Operating Junction Temperature
T
J
175
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.85
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22A113
3
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9045MR1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF9045MR1
MRF9045MBR1
945 MHz, 45 W, 28 V
LATERAL NCHANNEL
BROADBAND
RF POWER MOSFETs
CASE 126508, STYLE 1
TO270
PLASTIC
MRF9045MR1
CASE 133703, STYLE 1
TO272 DUAL LEAD
PLASTIC
MRF9045MBR1
Motorola, Inc. 2003
REV 6
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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MRF9045MR1 MRF9045MBR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
GateSource Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150 Adc)
V
GS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 350 mAdc)
V
GS(Q)
3
3.7
5
Vdc
DrainSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
--
0.22
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
--
4
--
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
--
70
--
pF
Output Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
--
38
--
pF
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1.7
--
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
TwoTone CommonSource Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
G
ps
17
19
--
dB
TwoTone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
38
41
--
%
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
--
31
28
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
--
14
9
dB
TwoTone CommonSource Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
G
ps
--
19
--
dB
TwoTone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
--
41
--
%
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
--
31
--
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
--
13
--
dB
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3
MRF9045MR1 MRF9045MBR1
MOTOROLA RF DEVICE DATA
Figure 1. MRF9045MR1 930960 MHz Broadband Test Circuit Schematic
Z3
0.14 x 0.32 Microstrip
Z4
0.47 x 0.32 Microstrip
Z5
0.16 x 0.32 x 0.62 Taper
Z6
0.18 x 0.62 Microstrip
Z7
0.56 x 0.62 Microstrip
Z8
0.33 x 0.32 Microstrip
Z9
0.14 x 0.32 Microstrip
Z10
0.36 x 0.08 Microstrip
Z11
1.01 x 0.08 Microstrip
Z12
0.15 x 0.08 Microstrip
Z13
0.29 x 0.08 Microstrip
B1, B2
Short Ferrite Beads, Surface Mount
C1, C7, C13, C14
47 pF Chip Capacitors, B Case
C2, C8
2.7 pF Chip Capacitors, B Case
C3
3.9 pF Chip Capacitor, B Case
C4, C5, C8, C9
10 pF Chip Capacitors, B Case
C6, C15, C16
10 F, 35 V Tantalum Surface Mount Capacitors
C10
2.2 pF Chip Capacitor, B Case
C11
4.7 pF Chip Capacitor, B Case
C12
1.2 pF Chip Capacitor, B Case
C17
220 F, 50 V Electrolytic Capacitor
L1, L2
12.5 nH Inductors
Z1
0.20 x 0.08 Microstrip
Z2
0.57 x 0.12 Microstrip
B1
C1
RF
INPUT
RF
OUTPUT
V
GG
V
DD
C6
L1
Z5
Z4
Z3
C2
Z2
Z1
Z7
C8
C9
Z8
Z9
Z10
C13
C14
B2
C15
C16
C17
C4
C5
Z6
+
+
C7
+
+
C12
C3
Z11
Z12
Z13
L2
DUT
C10
C11
Figure 2. MRF9045MR1 930960 MHz Broadband Test Circuit Component Layout
CUT
OUT
AREA
MRF9045MR1
Ground
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10 C11
C12 C13
C14
C15 C16
L1
L2
A1
A2
B1
B2
WB1
WB2
Ground
V
bias
V
supply
C17
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MRF9045MR1 MRF9045MBR1
4
MOTOROLA RF DEVICE DATA
Figure 3. MRF9045MBR1 930960 MHz Broadband Test Circuit Schematic
Z1
0.260 x 0.060 Microstrip
Z2
0.240 x 0.060 Microstrip
Z3
0.500 x 0.100 Microstrip
Z4
0.215 x 0.270 Microstrip
Z5
0.315 x 0.270 Microstrip
Z6
0.160 x 0.270 x 0.520 Taper
Z7
0.285 x 0.520 Microstrip
Z8
0.140 x 0.270 Microstrip
Z9
0.450 x 0.270 Microstrip
Z10
0.250 x 0.060 Microstrip
Z11
0.720 x 0.060 Microstrip
Z12
0.490 x 0.060 Microstrip
Z13
0.290 x 0.060 Microstrip
Board
Taconic RF350300,
r
= 3.5
B1
Short Ferrite Bead
B2
Long Ferrite Bead
C1, C8, C13, C14
47 pF Chip Capacitors, B Case
C2
0.42.5 pF Variable Capacitor, Johanson Gigatrim
C3
3.6 pF Chip Capacitor, B Case
C4
0.88.0 pF Variable Capacitor, Johanson Gigatrim
C5, C6, C9, C10
10 pF Chip Capacitors, B Case
C7, C15, C16
10 F, 35 V Tantalum Chip Capacitors
C11
7.5 pF Chip Capacitor, B Case
C12
0.64.5 pF Variable Capacitor, Johanson Gigatrim
C17
220 F Electrolytic Chip Capacitor
L1, L2
12.5 nH Surface Mount Inductors
WB1, WB2
10 mil Brass Wear Blocks
B1
C1
RF
INPUT
RF
OUTPUT
V
GG
V
DD
C7
L1
Z5
Z4
Z3
C2
Z2
Z1
Z7
C10
C9
Z8
Z9
Z10
C13
L2
C14
B2
C15
C16
C17
C6
C5
Z6
+
+
C8
+
+
C11
C4
C12
Z11
Z12
Z13
C3
Figure 4. MRF9045MBR1 930960 MHz Broadband Test Circuit Component Layout
CUT
OUT
AREA
WB1
WB2
C1
C2
C3
C5
C6
C7
C8
C9
C10
C4
C11
C12
C13
C14
C15 C16
C17
L1
L2
Rev-02
900 MHz
MRF9045MB
OUTPUT
INPUT
V
GG
V
DD
DUT
B1
B2
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5
MRF9045MR1 MRF9045MBR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
960
12
20
-38
50
IRL
IMD
f, Frequency (MHz)
Figure 5. Class AB Broadband Circuit
Performance
G
ps
, POWER GAIN (dB)
18
40
17
35
16
-30
19
45
15
-32
14
-34
13
-36
955
950
945
940
935
930
V
DD
= 28 Vdc
P
out
= 45 W (PEP)
I
DQ
= 350 mA
Two-Tone Measurement
100 kHz Tone Spacing
100
17
21
I
DQ
= 525 mA
420 mA
V
DD
= 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
350 mA
280 mA
20.5
20
19.5
19
18.5
18
17.5
10
1
0.1
100
-15
I
DQ
= 280 mA
350 mA
V
DD
= 28 Vdc
f1 = 945 MHz,
f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion versus
Output Power
INTERMODULATION DIST
OR
TION (dBc)
IMD,
420 mA
525 mA
-20
-25
-30
-35
-40
-45
-50
-55
10
1
0.1
100
-10
1
7th Order
V
DD
= 28 Vdc
I
DQ
= 350 mA
f1 = 945 MHz
f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DIST
OR
TION (dBc)
IMD,
3rd Order
5th Order
-20
-30
-40
-50
-60
-70
-80
10
Figure 9. Power Gain and Efficiency versus
Output Power
G
ps
-10
-18
-14
, DRAIN
h
EFFICIENCY
(%)
IMD, INTERMODULATION
DIST
OR
TION (dBc)
IRL, INPUT
RETURN
LOSS (dB)
-12
-16
100
20
0
50
V
DD
= 28 Vdc
I
DQ
= 350 mA
f = 945 MHz
P
out
, OUTPUT POWER (WATTS) AVG.
G
ps
, POWER GAIN (dB) 14
30
10
20
12
10
40
1
10
G
ps
22
16
18
60
, DRAIN EFFICIENCY
(%)
0.1
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MRF9045MR1 MRF9045MBR1
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
22
24
26
28
30
32
V
DD
, DRAIN VOLTAGE (VOLTS)
Figure 10. Output Voltage versus
Supply Voltage (MRF9045MR1)
P
out
, OUTPUT
POWER (W
ATTS) PEP
P
in
= 0.3 W
P
in
= 0.6 W
P
in
= 1 W
I
DQ
= 350 mA
f = 945 MHz
Two-Tone Measurement
100 kHz Tone Spacing
Figure 11. Power Gain, Efficiency and IMD
versus Output Power (MRF9045MBR1)
100
10
1
-20
V
DD
= 28 Vdc
I
DQ
= 350 mA
f1 = 945 MHz
f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
G
ps
, POWER GAIN (dB)
INTERMODULATION DIST
OR
TION (dBc)
IMD,
, DRAIN EFFICIENCY
(%)
20
60
18
20
0
-60
40
-40
10
G
ps
IMD
22
16
14
12
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7
MRF9045MR1 MRF9045MBR1
MOTOROLA RF DEVICE DATA
Figure 12. Series Equivalent Input and Output Impedance (MRF9045MR1)
f
MHz
Z
source
Z
load
930
945
0.81 j0.25
0.85 j0.05
2.03 + j0.09
2.03 + j0.28
V
DD
= 28 V, I
DQ
= 350 mA, P
out
= 45 W (PEP)
f = 945 MHz
Z
o
= 5
f = 930 MHz
f = 945 MHz
f = 930 MHz
Z
load
Z
source
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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MRF9045MR1 MRF9045MBR1
8
MOTOROLA RF DEVICE DATA
Figure 13. Series Equivalent Input and Output Impedance (MRF9045MBR1)
f
MHz
Z
source
Z
load
930
945
960
0.75 j0.6
0.70 j0.5
0.72 j0.6
2.65 j0.05
2.60 j0.05
2.55 j0.02
V
DD
= 28 V, I
DQ
= 350 mA, P
out
= 45 W (PEP)
Z
o
= 5
f = 930 MHz
f = 960 MHz
f = 930 MHz
f = 960 MHz
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Zsource
Z load
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
load
Z
source
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9
MRF9045MR1 MRF9045MBR1
MOTOROLA RF DEVICE DATA
NOTES
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MRF9045MR1 MRF9045MBR1
10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
TO270
MRF9045MR1
PLASTIC
CASE 126508
ISSUE G
DATUM
PLANE
BOTTOM VIEW
A1
2X
E
D1
E4
E1
D2
E3
A2
EXPOSED
HEATSINK AREA
A
B
D
H
PIN ONE ID
D
A
M
aaa
D
A
M
aaa
D
2X
b1
2X
D3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE -H-.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS -A- AND -B- TO BE DETERMINED AT
DATUM PLANE -H-.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. DIMENSIONS "D" AND "E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE -D-.
NOTE 7
c1
F
ZONE J
E2
2X
A
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.078
.082
1.98
2.08
INCHES
A1
.039
.043
0.99
1.09
A2
.040
.042
1.02
1.07
D
.416
.424
10.57
10.77
D1
.378
.382
9.60
9.70
D2
.290
.320
7.37
8.13
D3
.016
.024
0.41
0.61
E
.436
.444
11.07
11.28
E1
.238
.242
6.04
6.15
E2
.066
.074
1.68
1.88
E3
.150
.180
3.81
4.57
E4
.058
.066
1.47
1.68
F
b1
.193
.199
4.90
5.06
c1
.007
.011
0.18
0.28
aaa
.025 BSC
.004
0.64 BSC
0.10
PIN 1
PIN 2
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
E5
E5
E5
.231
.235
5.87
5.97
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Freescale Semiconductor, Inc.
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11
MRF9045MR1 MRF9045MBR1
MOTOROLA RF DEVICE DATA
TO272 DUAL LEAD
PLASTIC
MRF9045MBR1
CASE 133703
ISSUE B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE -H- IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE -H-.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS -A- AND -B- TO BE DETERMINED AT
DATUM PLANE -H-.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
H
C
A
B
SEATING
PLANE
DATUM
PLANE
2X
b1
A
E1
r1
DRAIN
LEAD
D
D1
E
NOTE 8
Y
Y
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.100
.104
2.54
2.64
INCHES
A1
.039
.043
0.99
1.09
A2
.040
.042
1.02
1.07
D
.928
.932
23.57
23.67
D1
E
.438
.442
11.12
11.23
E1
.248
.252
6.30
6.40
F
b1
.193
c1
.007
.011
.18
r1
.063
.068
1.60
aaa
1
VIEW YY
.810 BSC
.004
20.57 BSC
.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
.025 BSC
.28
1.73
PIN 3
A1
A2
F
ZONE "J"
7
B
aaa
M
C A
aaa
M
C A
2X
.199
4.90
0.64 BSC
5.05
c1
2
DRAIN ID
GATE
LEAD
E2
E2
E2
.241
.245
6.12
6.22
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Freescale Semiconductor, Inc.
For More Information On This Product,
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MRF9045MR1 MRF9045MBR1
12
MOTOROLA RF DEVICE DATA
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HOME PAGE: http://motorola.com/semiconductors
MRF9045MR1/D
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