1
MRF9135L MRF9135LR3 MRF9135LSR3
MOTOROLA RF DEVICE DATA
The RF SubMicron MOSFET Line
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for largesignal, commonsource amplifier
applications in 26 volt base station equipment.
Typical NCDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 1100 mA
IS95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power -- 25 Watts Avg.
Power Gain -- 17.8 dB
Efficiency -- 25%
Adjacent Channel Power --
750 kHz: 47 dBc @ 30 kHz BW
Internally Matched, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent LargeSignal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
65
Vdc
GateSource Voltage
V
GS
+15, 0.5
Vdc
Total Device Dissipation @ T
C
> = 25
C
Derate above 25
C
P
D
298
1.7
Watts
W/
C
Storage Temperature Range
T
stg
65 to +200
C
Operating Junction Temperature
T
J
200
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C7 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.6
C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9135L/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
880 MHz, 135 W, 26 V
LATERAL NCHANNEL
RF POWER MOSFETs
CASE 46506, STYLE 1
NI780
MRF9135L
CASE 465A06, STYLE 1
NI780S
MRF9135LSR3
MRF9135L
MRF9135LR3
MRF9135LSR3
Motorola, Inc. 2002
REV 1
MRF9135L MRF9135LR3 MRF9135LSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
GateSource Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 450
A)
V
GS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 1100 mAdc)
V
GS(Q)
3
3.7
5
Vdc
DrainSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
DS(on)
--
0.19
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 9 Adc)
g
fs
--
12
--
S
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
DS
= 26 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
--
109
--
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
4.4
--
pF
FUNCTIONAL TESTS (In Motorola Test Fixture) SingleCarrier NCDMA, 1.2288 MHz Channel Bandwidth Carrier,
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
CommonSource Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 25 W Avg. NCDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
G
ps
16
17.8
--
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 25 W Avg. NCDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
22
25
--
%
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 25 W Avg. NCDMA, I
DQ
= 1100 mA,
f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz
Channel Spacing)
ACPR
--
47
45
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 25 W Avg. NCDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
IRL
--
13.5
9
dB
CommonSource Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 25 W Avg. NCDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
G
ps
--
17
--
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 25 W Avg. NCDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
--
24
--
%
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 25 W Avg. NCDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750
kHz Channel Spacing)
ACPR
--
46
--
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 25 W Avg. NCDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
IRL
--
12.5
--
dB
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 135 W CW, I
DQ
= 1100 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
No Degradation In Output Power
3
MRF9135L MRF9135LR3 MRF9135LSR3
MOTOROLA RF DEVICE DATA
Figure 1. 880 MHz Test Circuit Schematic
Z1
0.430
x 0.080 Microstrip
Z2
0.430
x 0.080 Microstrip
Z3
0.800
x 0.080 Microstrip
Z4
0.200
x 0.220 Microstrip
Z5
0.110
x 0.220 Microstrip
Z6
0.175
x 0.220 Microstrip
Z7
0.200
x 0.220 x 0.630 Taper
Z8
0.250
x 0.630 Microstrip
Z9
0.050
x 0.630 Microstrip
Z10
0.050
x 0.630 Microstrip
Z11
0.105
x 0.630 Microstrip
Z12
0.145
x 0.630 Microstrip
Z13
0.200
x 0.630 x 0.220 Taper
Z14
0.180
x 0.220 Microstrip
Z15
0.110
x 0.220 Microstrip
Z16
0.200
x 0.220 Microstrip
Z17
0.900
x 0.080 Microstrip
Z18
0.360
x 0.080 Microstrip
Z19
0.410
x 0.080 Microstrip
RF
INPUT
RF
OUTPUT
Z1
V
GG
C1
C17
Z4
DUT
V
DD
C3
Z2
Z12
C14
C19
C23
C2
+
+
+
C18
C20 C21 C22
L2
C16
C15
Z16
Z13 Z14
Z17
Z18
Z19
L1
+
C9
C8
C7
+
B2
B1
C13
C11
C12
C10
C6
C5
Z5
Z6
Z7
C4
Z3
Z8
Z9
Z15
Z11
Z10
Table 1. 880 MHz Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
B1, B2
Short Ferrite Beads, Surface Mount
95F786
Newark
C1, C7, C17, C18
47 pF Chip Capacitors, B Case
100B470JP 500X
ATC
C2, C16
0.64.5 Gigatrim Variable Capacitors
44F3360
Newark
C3
8.2 pF Chip Capacitor, B Case
100B8R2BP 500X
ATC
C4, C15
0.88.0 Gigatrim Variable Capacitors
44F3360
Newark
C5, C6
12 pF Chip Capacitors, B Case
100B120JP 500X
ATC
C8
20K pF Chip Capacitor, B Case
200B203MP50X
ATC
C9, C20, C21, C22
10
F, 35 V Tantulum Capacitors
93F2975
Newark
C10, C11, C12, C13
7.5 pF Chip Capacitors, B Case
100B7R5JP 500X
ATC
C14
11 pF Chip Capacitor, B Case
100B110JP 500X
ATC
C19
0.56
F, 50 V Chip Capacitor
C1825C564K5RA7800
Kemet
C23
470
F Electrolytic Capacitor
14F185
Newark
L1, L2
12.5 nH Coilcraft inductors
A04T5
Coilcraft
WB1, WB2
10 mil Brass Shim (0.205 x 0.530)
RFDesign Lab
RFDesign Lab
PCB
Etched Circuit Board
900 MHz 4X6 Cobra Rev 02
CMR
Bedstead
Circuit Bedstead
DWG #990528JAM2
RFDesign Lab
Board Material
30 mil Glass Teflon
,
r
= 2.55, 2 oz Cu
GX03005522
Arlon
MRF9135L MRF9135LR3 MRF9135LSR3
4
MOTOROLA RF DEVICE DATA
C20 C21 C22
C14
Figure 2. 880 MHz Test Circuit Component Layout
CUT
OUT
AREA
900 MHz
MRF9135L
Rev-02
WB1
WB2
L1
L2
C10
C9
B1
C11
C13
C12
C1
C2
C3
C4
C6
C7
C5
C8
B2
C18
C15
C16
C17
C19
C23
5
MRF9135L MRF9135LR3 MRF9135LSR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
900
865
870
875
880
885
890
895
11
19
860
-60
35
IRL
G
ps
ACPR
V
DD
= 26 Vdc
P
out
= 25 W (Avg.)
I
DQ
= 1100 mA
N-CDMA IS-95 Pilot, Sync, Paging
Traffic Codes 8 through 13
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit
Performance
G
ps
, POWER GAIN (dB)
18
30
17
25
16
20
15
-20
14
-30
13
-40
12
-50
-18
-10
-12
-14
-16
INPUT
RETURN LOSS (dB)
IRL,
ACPR (dBc)
100
15.5
19
1
I
DQ
= 1650 mA
1320 mA
V
DD
= 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
18.5
18
17.5
17
16.5
16
1100 mA
880 mA
10
100
-60
1
1650 mA
I
DQ
= 880 mA
V
DD
= 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
INTERMODULA
TION DIST
OR
TION (dBc)
IMD,
-20
-30
-40
-50
10
1100 mA
1320 mA
100
-80
-10
1
7th Order
V
DD
= 26 Vdc
I
DQ
= 1100 mA
f1 = 880 MHz, f2 = 880.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION DIST
OR
TION (dBc)
IMD,
-20
-30
-40
-50
-60
-70
10
5th Order
3rd Order
100
10
20
1
0
50
G
ps
V
DD
= 26 Vdc
I
DQ
= 1100 mA
f1 = 880 MHz
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
G
ps
, POWER GAIN (dB)
, DRAIN EFFICIENCY
(%)
18
40
16
30
14
20
12
10
10
, DRAIN
h
EFFICIENCY
(%)
PDF 
ZIP