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Электронный компонент: MRF947T1

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21
MMBR941 MRF947 MRF9411 SERIES
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
Low Noise, High-Frequency
Transistors
Designed for use in high gain, low noise smallsignal amplifiers. This series
features excellent broadband linearity and is offered in a variety of packages.
Fully Implanted Base and Emitter Structure
9 Finger, 1.25 Micron Geometry with Gold Top Metal
Gold Sintered Back Metal
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
Order this document
by MMBR941LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBR941
MRF947
MRF9411
SERIES
IC = 50 mA
LOW NOISE
HIGHFREQUENCY
TRANSISTORS
CASE 31808, STYLE 6
SOT23
LOW PROFILE
MMBR941LT1, T3, MMBR941BLT1
CASE 318A05, STYLE 1
SOT143
LOW PROFILE
MRF9411LT1
CASE 41902, STYLE 3
MRF947AT1, MRF947BT1,
MRF947T1, T3
Motorola, Inc. 1997
REV 9
MMBR941 MRF947 MRF9411 SERIES
22
MOTOROLA RF DEVICE DATA
MAXIMUM RATINGS
Rating
Symbol
MMBR941LT1, T3
MRF9411LT1
MRF947 Series
Unit
CollectorEmitter Voltage
VCEO
10
10
10
Vdc
CollectorBase Voltage
VCBO
20
20
20
Vdc
EmitterBase Voltage
VEBO
1.5
1.5
1.5
Vdc
Power Dissipation (1) TC = 75
C
Derate linearly above Tcase = 75
C @
PDmax
0.25
3.33
0.25
3.33
0.188
2.5
Watts
mW/
C
Collector Current -- Continuous (2)
IC
50
50
50
mA
Maximum Junction Temperature
TJmax
150
150
150
C
Storage Temperature
Tstg
55 to +150
55 to +150
55 to +150
C
Thermal Resistance,
Junction to Case
R
JC
300
300
400
C/W
DEVICE MARKING
MMBR941LT1 = 7Y
MMBR941BLT1 = 7N
MRF947T1, T3 = A
MRF947BT1 = H
MRF9411LT1 = 10
MRF947AT1 = G
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (3)
CollectorEmitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
All
V(BR)CEO
10
12
--
Vdc
CollectorBase Breakdown Voltage
(IC = 0.1 mA, IE = 0)
All
V(BR)CBO
20
23
--
Vdc
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
All
IEBO
--
--
0.1
Adc
Collector Cutoff Current
(VCB = 10 V, IE = 0)
All
ICBO
--
--
0.1
Adc
ON CHARACTERISTICS (3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA) (MMBR941LT1, MRF9411LT1)
(MMBR941BLT1)
hFE
50
100
--
--
200
200
--
DC Current Gain (VCE = 1.0 V, IC = 500
A)
MRF947T1, MRF947BT1
hFE1
50
--
--
--
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
MRF947T1, T3
MRF947AT1
MRF947BT1
hFE2
hFE3
hFE4
50
75
100
--
--
--
--
150
200
--
DYNAMIC CHARACTERISTICS
CollectorBase Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
All
Ccb
--
0.35
--
pF
Current Gain -- Bandwidth Product
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
All
fT
--
8.0
--
GHz
NOTE:
1. To calculate the junction temperature use TJ = PD x R
JC + TCASE. Case temperature measured on collector lead immediately adjacent to
body of package.
2. IC -- Continuous (MTBF
10 years).
3. Pulse width
300
s, duty cycle
2% pulsed.
23
MMBR941 MRF947 MRF9411 SERIES
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
Conditions
Symbol
MRF9411LT1
MMBR941LT1, T3
MRF947 Series
Unit
Conditions
Symbol
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Insertion Gain
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
|S21|2
--
--
16
10
--
--
--
--
14
8.0
--
--
--
--
14
10.8
--
--
dB
Maximum Unilateral Gain (1)
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
GU max
--
--
18
12
--
--
--
--
16
10
--
--
--
--
14.8
11.6
--
--
dB
Noise Figure -- Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
NFMIN
--
--
1.5
2.1
--
--
--
--
1.5
2.1
--
--
--
--
1.5
2.1
--
--
dB
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
GNF
--
--
15
9.5
--
--
--
--
14
8.5
--
--
--
--
14
10
--
--
dB
Noise Figure -- 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NF50
--
1.9
2.8
--
1.9
2.8
--
1.9
2.8
dB
NOTE:
1. Maximum Unilateral Gain is GUmax =
|S
21
|2
, INSER
TION GAIN (dB)
Figure 1. CollectorBase Capacitance
versus Voltage
Figure 2. DC Current Gain versus
Collector Current
Figure 3. Gain Bandwidth Product versus
Collector Current
Figure 4. Insertion Gain versus Collector Current
TYPICAL CHARACTERISTICS
MMBR941LT1, T3; MMBR941BLT1; MRF9411LT1; MRF9411BLT1
IC, COLLECTOR CURRENT (mA)
VCE = 6 V
f = 1 GHz
24
20
16
12
8
4
0
1
2
3
5
10
7
20
100
70
50
30
VCE = 6 V
VCE = 6 V
f = 1 GHz
IC, COLLECTOR CURRENT (mA)
12
10
8
6
4
2
0
1
2
3
5
10
7
20
100
70
50
30
IC, COLLECTOR CURRENT (mA)
200
100
70
50
30
20
10
1
2
3
5
10
7
20
100
70
50
30
300
1
2
3
5
7
10
1
0.7
0.5
0.1
0.2
0.3
MRF9411LT1
f T
, GAIN BANDWIDTH PRODUCT
(GHz)
h
FE
, DC CURRENT

GAIN
C
CB
, CAP
ACIT
ANCE
(pF)
VCB, REVERSE VOLTAGE (V)
MMBR941LT1, T3
f = 1 MHz
|S21|2
(1
|S11|2)(1 |S22|2)
MMBR941 MRF947 MRF9411 SERIES
24
MOTOROLA RF DEVICE DATA
|S
21
|2
, INSER
TION GAIN (dB)
|S
21
|2
, INSER
TION GAIN (dB)
Figure 5. MMBR941LT1, T3
Figure 6. MRF9411LT1
Figure 7. Noise Figure and Associated Gain
versus Frequency
Figure 8. Minimum Noise Figure versus
Collector Current
FORWARD INSERTION GAIN AND
MAXIMUM UNILATERAL GAIN versus FREQUENCY
Figure 9. Functional Circuit Schematic (all devices)
30
25
20
15
10
5
0
0.1
0.2 0.3
0.5
1
0.7
2
10
7
5
3
f, FREQUENCY, (GHz)
IC, COLLECTOR CURRENT (mA)
IC = 15 mA
VCE = 6 V
VCE = 6 V
IC = 5 mA
VCE = 6 V
|S21|2
GUmax
NFmin
NFmin @ 2 GHz
|S21|2
GUmax
GU
max
, MAXIMUM UNILA
TERAL

GAIN
(dB)
MRF9411LT1
NF50
VBE
VCE
DUT
RF INPUT
RF OUTPUT
*SLUG TUNER
*SLUG TUNER
BIAS
NETWORK
BIAS
NETWORK
*MICROLAB/FXR
**
SF 11N < 1 GHz
**
SF 31IN
1 GHz
0
1
2
3
4
5
6
30
25
20
15
10
5
0
0.1
0.2 0.3
0.5
1
0.7
2
10
7
5
3
f, FREQUENCY, (GHz)
24
20
16
12
8
4
0
0.1
0.2 0.3
0.5
1
0.7
2
10
7
5
3
f, FREQUENCY, (GHz)
6
5
4
3
2
1
0
1
2
3
5
10
7
20
100
70
50
30
IC = 15 mA
VCE = 6 V
NF
, NOISE FIGURE (dB)
NF
, NOISE FIGURE (dB)
G
NF
,
ASSOCIA
TED GAIN (dB)
GU
max
, MAXIMUM UNILA
TERAL

GAIN
(dB)
CIRCUIT -- FIGURE 9
MMBR941LT1, T3
MRF947
NFmin @ 1 GHz
25
MMBR941 MRF947 MRF9411 SERIES
MOTOROLA RF DEVICE DATA
1
2
5
20
30
10
1
0.1
0.2
0.5
REVERSE VOLTAGE (V)
C, CAP
ACIT
ANCE
(pF)
Figure 10. Capacitance versus Voltage
0.1
0.5
1
10
5
20
2
30
150
130
110
50
70
90
IC, COLLECTOR CURRENT (mA)
h , DC CURRENT
GAIN
FE
Figure 11. DC Current Gain versus Collector Current
TYPICAL CHARACTERISTICS
MRF947 SERIES
Cob
Ccb
20
1
2
30
10
8
6
4
0
2
5
f T
IC, COLLECTOR CURRENT (mA)
Figure 12. GainBandwidth Product
versus Collector Current
3
4
15
20
1
2
30
10
15
13
11
9
5
7
5
G
NF
IC, COLLECTOR CURRENT (mA)
Figure 13. Associated Gain and Minimum
Noise Figure versus Collector Current
5
4
3
2
0
1
N
F
(dB)
0.2
0.3
0.5
1
3
2
5
32
28
24
20
16
0
4
12
8
0.1
f, FREQUENCY (GHz)
GAIN (dB)
Figure 14. Forward Insertion Gain and Maximum
Stable/Available Power Gain versus Frequency
, GAIN BANDWIDTH PRODUCT
(GHz)
,
ASSOCIA
TED GAIN (dB)
VCE = 6 V
IC = 5 mA
S21 2
NF
VCE = 6 V
GNF
MSG
f = 1 GHz
VCE = 6 V
MSG
MAG