1
MRFG35003M6T1
MOTOROLA RF DEVICE DATA
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Character-
ized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications.
Typical WCDMA Performance: 42 dBc ACPR, 3.55 GHz, 6 Volts,
I
DQ
= 180 mA
Output Power -- 450 mWatts
Power Gain -- 9 dB
Efficiency -- 24%
3 Watts P1dB @ 3.55 GHz
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
8
Vdc
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
22.7
(2)
0.15
(2)
Watts
W/
C
GateSource Voltage
V
GS
5
Vdc
RF Input Power
P
in
24
dBm
Storage Temperature Range
T
stg
65 to +150
C
Channel Temperature
(1)
T
ch
175
C
Operating Case Temperature Range
T
C
20 to +85
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
6.6
(2)
C/W
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22A113
1
(1) For reliable operation, the operating channel temperature should not exceed 150
C.
(2) Simulated.
Order this document
by MRFG35003M6T1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
MRFG35003M6T1
CASE 46602, STYLE 1
PLD1.5
PLASTIC
Motorola, Inc. 2003
REV 1
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Freescale Semiconductor, Inc.
For More Information On This Product,
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MRFG35003M6T1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
I
DSS
--
2.9
--
Adc
Off State Leakage Current
(V
GS
= 0.4 Vdc, V
DS
= 0 Vdc)
I
GSS
--
< 1.0
100
Adc
Off State Drain Current
(V
DS
= 6 Vdc, V
GS
= 1.9 Vdc)
I
DSO
--
0.02
1.0
mAdc
Off State Current
(V
DS
= 20 Vdc, V
GS
= 2.5 Vdc)
I
DSX
--
1.0
15
mAdc
GateSource Cutoff Voltage
(V
DS
= 3.5 Vdc, I
DS
= 15 mA)
V
GS(th)
1.2
1.0
0.7
Vdc
Quiescent Gate Voltage
(V
DS
= 6 Vdc, I
DQ
= 180 mA)
V
GS(Q)
1.1
0.9
0.7
Vdc
Power Gain
(V
DD
= 6 Vdc, I
DQ
= 180 mA, f = 3.55 GHz)
G
ps
8
9
--
dB
Output Power, 1 dB Compression Point
(V
DD
= 6 Vdc, I
DQ
= 180 mA, f = 3.55 GHz)
P1dB
--
3
--
W
Drain Efficiency
(V
DD
= 6 Vdc, I
DQ
= 180 mA, P
out
= 450 mW, f = 3.55 GHz.
Tune for Maximum P
out
)
h
D
22
24
--
%
Adjacent Channel Power Ratio
(V
DD
= 6 Vdc, P
out
= 450 mW Avg., I
DQ
= 180 mA,
f = 3.55 GHz, WCDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
ACPR
--
42
38
dBc
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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3
MRFG35003M6T1
MOTOROLA RF DEVICE DATA
Z8
0.439
x 0.136 Microstrip
Z9
0.062
x 0.280 Microstrip
Z11
0.349
x 0.302 Microstrip
Z12
0.055
x 0.130 Microstrip
Z13
0.044
x 0.502 Microstrip
PCB
Rogers 4350, 0.020
,
r
= 3.50
Figure 1. 3.5 GHz Test Circuit Schematic
Z1, Z14
0.044
x 0.125 Microstrip
Z2
0.440
x 0.105 Microstrip
Z3
0.340
x 0.357 Microstrip
Z4
0.380
x 0.426 Microstrip
Z5, Z10
0.527
x 0.015 Microstrip
Z6
0.027
x 0.347 Microstrip
Z7
0.538
x 0.115 Microstrip
C11
RF
INPUT
RF
OUTPUT
R1
C10
C9
C8
C7
C6
C5
C16 C17 C18 C19 C20
C21 C22
C3 C4
C14 C15
Z5
Z10
C2
C12
C13
C23
C25
C26
C27
C28
C1
C24
Z1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
Z11 Z12
Z13
Z14
V
DD
=6.0
V
GS
Table 1. 3.5 GHz Test Circuit Component Designations and Values
Designation
Description
C1
12 pF Chip Capacitor, B Case, ATC
C2
0.1 pF Chip Capacitor (0805), AVX
C3, C4, C14, C15
3.9 pF Chip Capacitors (0805), AVX
C5, C16
10 pF Chip Capacitors, A Case, ATC
C6, C17
100 pF Chip Capacitors, A Case, ATC
C7, C18
100 pF Chip Capacitors, B Case, ATC
C8, C19
1000 pF Chip Capacitors, B Case, ATC
C9, C20
3.9
F Chip Capacitors, B Case, ATC
C10, C21
0.1
F Chip Capacitors, B Case, ATC
C11, C22
22
F, 35 V Tantalum Surface Mount Capacitor, Newark
C12, C13, C26, C27
0.3 pF Chip Capacitors (0805), AVX
C23, C25, C28
1.0 pF Chip Capacitors (0805), AVX
C24
7.5 pF Chip Capacitor, B Case, ATC
R1
50
W Chip Resistor, Newark
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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MRFG35003M6T1
4
MOTOROLA RF DEVICE DATA
Figure 2. 3.5 GHz Test Circuit Component Layout
Rev 1
MRFG35003M6
R1
+
+
C11
C1
C28
C2
C3
C4
C5
C6
C7
C8
C9
C10
C12
C27
C13
C26
C25
C23
C24
C22
C21
C20
C19
C18
C17
C16
C14
C15
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Freescale Semiconductor, Inc.
For More Information On This Product,
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5
MRFG35003M6T1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
1
-60
0
0.1
-60
0
IRL
ACPR
P
out
, OUTPUT POWER (WATTS)
Figure 3. WCDMA ACPR and Input Return
Loss versus Output Power
ACPR (dBc)
V
DS
= 6 Vdc, I
DQ
= 180 mA
f = 3.55 GHz, 8.5 P/A 3GPP W-CDMA
S
= 0.898-132.18_,
L
= 0.883-134.70_
INPUT
RETURN LOSS (dB)
IRL,
-10
-10
-20
-20
-30
-30
-40
-40
-50
-50
1
8
12
0.1
0
40
G
T
PAE
P
out
, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
, POWER
ADDED EFFICIENCY
(%)
PA
E
G
T
,
TRANSDUCER GAIN (dB)
V
DS
= 6 Vdc, I
DQ
= 180 mA
f = 3.55 GHz, 8.5 P/A 3GPP W-CDMA
S
= 0.898-132.18_,
L
= 0.883-134.70_
11.5
35
11
30
10.5
25
10
20
9.5
15
9
10
8.5
5
NOTE: All data is referenced to package lead interface.
S
and
L
are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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