PIN3
COLLECTOR
(OUTPUT)
PIN1
EMITTER
(GROUND)
PIN2
BASE
(INPUT)
R1
R2
1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a baseemitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC59 package which is designed
for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC59 package can be soldered using wave or reflow.
The modified gullwinged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
MAXIMUM RATINGS
(TA = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorBase Voltage
VCBO
50
Vdc
CollectorEmitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation @ TA = 25
C(1)
Derate above 25
C
PD
*
200
1.6
mW
mW/
C
THERMAL CHARACTERISTICS
Thermal Resistance -- JunctiontoAmbient (surface mounted)
R
JA
625
C/W
Operating and Storage Temperature Range
TJ, Tstg
65 to +150
C
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
10
C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1(2)
8A
8B
8C
8D
8E
10
22
47
10
10
10
22
47
47
MUN2216T1(2)
MUN2230T1(2)
MUN2231T1(2)
MUN2232T1(2)
MUN2233T1(2)
MUN2234T1(2)
8F
8G
8H
8J
8K
8L
4.7
1.0
2.2
4.7
4.7
22
1.0
2.2
4.7
47
47
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MUN2211T1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN SILICON
BIAS RESISTOR
TRANSISTOR
Motorola Preferred Devices
CASE 318D03, STYLE 1
(SC59)
MUN2211T1
SERIES
2
1
3
Motorola, Inc. 1996
REV 4
MUN2211T1 SERIES
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (VCB = 50 V, IE = 0)
ICBO
--
--
100
nAdc
CollectorEmitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
--
--
500
nAdc
EmitterBase Cutoff Current
MUN2211T1
(VEB = 6.0 V, IC = 0)
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
IEBO
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
CollectorBase Breakdown Voltage (IC = 10
A, IE = 0)
V(BR)CBO
50
--
--
Vdc
CollectorEmitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
--
--
Vdc
ON CHARACTERISTICS(3)
DC Current Gain
MUN2211T1
(VCE = 10 V, IC = 5.0 mA)
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
350
350
5.0
15
30
200
150
--
--
--
--
--
--
--
--
--
--
--
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1
(IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/
MUN2232T1/MUN2233T1/MUN2234T1
VCE(sat)
--
--
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k
)
MUN2211T1
MUN2212T1
MUN2214T1
VOL
--
--
--
--
--
--
0.2
0.2
0.2
Vdc
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k
)
MUN2213T1
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
MUN2211T1 SERIES
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(Continued)
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k
)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k
) MUN2230T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k
)
MUN2215T1
MUN2216T1
MUN2233T1
VOH
4.9
--
--
Vdc
Input Resistor
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
k
Resistor Ratio
MUN2211T1/MUN2212T1/MUN2213T1
MUN2214T1
MUN2215T1/MUN2216T1
MUN2230T1/MUN2231T1/MUN2232T1
MUN2233T1
MUN2234T1
R1/R2
0.8
0.17
--
0.8
0.055
0.38
1.0
0.21
--
1.0
0.1
0.47
1.2
0.25
--
1.2
0.185
0.56
Figure 1. Derating Curve
250
200
150
100
50
0
50
0
50
100
150
TA, AMBIENT TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
R
JA = 625
C/W
MUN2211T1 SERIES
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2211T1
V
in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
10
0
20
30
IC, COLLECTOR CURRENT (mA)
10
1
0.1
VO = 0.2 V
TA = 25
C
75
C
25
C
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001
0
20
40
60
80
IC, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
1000
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
TA = 75
C
25
C
25
C
TA = 25
C
25
C
IC/IB = 10
Figure 5. Output Current versus Input Voltage
75
C
25
C
TA = 25
C
100
10
1
0.1
0.01
0.001
0
1
2
3
4
Vin, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 6. Input Voltage versus Output Current
50
0
10
20
30
40
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAP
ACIT
ANCE (pF)
75
C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25
C
VO = 5 V
MUN2211T1 SERIES
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2212T1
V
in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA = 75
C
25
C
25
C
100
10
1
100
75
C
25
C
100
0
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001
2
4
6
8
10
TA = 25
C
0
IC, COLLECTOR CURRENT (mA)
100
VO = 0.2 V
TA = 25
C
75
C
10
1
0.1
10
20
30
40
50
25
C
Figure 11. Input Voltage versus Output Current
0.001
V
CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
25
C
IC/IB = 10
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
0
20
60
80
50
0
10
20
30
40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAP
ACIT
ANCE (pF)
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25
C
VO = 5 V
TA = 25
C
75
C
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