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1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Power
Transistors
The MJ15001 and MJ15002 are EpiBase power transistors designed for high
power audio, disk head positioners and other linear applications.
High Safe Operating Area (100% Tested) --
200 W @ 40 V
50 W @ 100 V
For Low Distortion Complementary Designs
High DC Current Gain --
hFE = 25 (Min) @ IC = 4 Adc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
140
Vdc
CollectorBase Voltage
VCBO
140
Vdc
EmitterBase Voltage
VEBO
5
Vdc
Collector Current -- Continuous
IC
15
Adc
Base Current -- Continuous
IB
5
Adc
Emitter Current -- Continuous
IE
20
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
200
1.14
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.875
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/16
from Case for
v
10 seconds
TL
265
_
C
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ15001/D
Motorola, Inc. 1995
MJ15001
MJ15002
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
200 WATTS
NPN
PNP
CASE 107
TO204AA
(TO3)
MJ15001 MJ15002
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC, = 200 mAdc, IB = 0)
VCEO(sus)
140
--
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150
_
C)
ICEX
--
--
100
2
Adc
mAdc
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ICEO
--
250
Adc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
--
100
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1 s (nonrepetitive))
(VCE = 100 Vdc, t = 1 s (nonrepetitive))
IS/b
5
0.5
--
--
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 2 Vdc)
hFE
25
150
--
CollectorEmitter Saturation Voltage
(IC = 4 Adc, IB = 0.4 Adc)
VCE(sat)
--
1
Vdc
BaseEmitter On Voltage
(IC = 4 Adc, VCE = 2 Vdc)
VBE(on)
--
2
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
fT
2
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
--
1000
pF
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
v
2%.
I C
, COLLECT
OR CURRENT
(AMP)
5
Figure 1. ActiveRegion Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
5
7
10
200
10
2
2
3
50 70 100
20
30
7
200
1
3
0.5
0.2
0.7
0.3
TC = 25
C
TJ = 200
C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ (pk) = 200
_
C; TC is
variable depending on conditions. At high case temper-
atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
MJ15001 MJ15002
3
Motorola Bipolar Power Transistor Device Data
f T
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
IC, COLLECTOR CURRENT (AMP)
0.7
1
2
3
5
10
7
20
0.2 0.3
0.5
2
0.7
1
2
3
5
10
7
20
0.2 0.3
0.5
Figure 2. Capacitances
IC, COLLECTOR CURRENT (AMP)
2.0
1.6
1.2
0.4
0.8
0
0.7
1
2
3
5
10
7
20
IC, COLLECTOR CURRENT (AMP)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. CurrentGain -- Bandwidth Product
Figure 4. DC Current Gain
700
500
1000
3
5
10
150
2
300
200
100
70
50
30
20
7
IC, COLLECTOR CURRENT (AMP)
Figure 5. "On" Voltages
10
20
30
70
50
100
1.5
9
8
10
0.3
0.5
1
0.2
4
3
2
1
0.7
MJ15002 (PNP)
0
3
5
10
7
0.1
2
7
6
5
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5
TJ = 25
C
VBE @ VCE = 2 Vdc
VCE(sat) @ IC/IB = 10
V
, VOL
T
AGE (VOL
TS)
TJ = 100
C
25
C
100
C
2.0
1.6
1.2
0.4
0.8
0
0.7
1
2
3
5
10
7
20
0.2 0.3
0.5
TJ = 100
C
25
C
h
FE
, DC CURRENT
GAIN
VCE = 2 Vdc
TJ = 25
C
VCE = 10 V
ftest = 0.5 MHz
Cib
MJ15001 (NPN)
TJ = 25
C
MJ15001 (NPN)
MJ15002 (PNP)
h
FE
, DC CURRENT
GAIN
V
, VOL
T
AGE (VOL
TS)
70
50
100
30
20
10
7
5
3
2
200
70
50
100
30
20
10
7
5
3
200
C, CAP
ACIT
ANCE (pF)
Cib
Cob
Cob
MJ15001
MJ15002
MJ15001
MJ15002
VCE = 2 Vdc
TJ = 100
C
25
C
VBE @ VCE = 2 Vdc
TJ = 25
C
100
C
VCE(sat) @ IC/IB = 10
TJ = 100
C
25
C
TYPICAL CHARACTERISTICS
MJ15001 MJ15002
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
1.050
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.830
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
Q
Y
2
1
U
L
G
B
V
H
CASE 107
TO204AA (TO3)
ISSUE Z
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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
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MJ15001/D
*MJ15001/D*
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