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Электронный компонент: TIP34C

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1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon
High-Power Transistors
. . . for generalpurpose power amplifier and switching applications.
10 A Collector Current
Low Leakage Current -- ICEO = 0.7 mA @ 60 V
Excellent dc Gain -- hFE = 40 Typ @ 3.0 A
High Current Gain Bandwidth Product -- hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz
MAXIMUM RATINGS
Rating
Symbol
TIP33B
TIP34B
TIP33C
TIP34C
Unit
CollectorEmitter Voltage
VCEO
80 V
100 V
Vdc
CollectorBase Voltage
VCB
80 V
100 V
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak (1)
IC
10
15
Adc
Base Current -- Continuous
IB
3.0
Adc
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
80
0.64
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.56
_
C/W
JunctionToFreeAir Thermal Resistance
R
JA
35.7
_
C/W
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle
v
10%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (A)
0.1
1.0
5.0
10
10
20
100
500
h
FE
, DC CURRENT
GAIN
200
50
NPN
PNP
VCE = 4.0 V
TJ = 25
C
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP33B/D
Motorola, Inc. 1995
TIP33B
TIP33C
TIP34B
TIP34C
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
100 VOLTS
80 WATTS
*Motorola Preferred Device
*
NPN
*
PNP
CASE 340D01
TO218AC
TIP33B TIP33C TIP34B TIP34C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 30 mA, IB = 0)
TIP33B, TIP34B
TIP33C, TIP34C
VCEO(sus)
80
100
--
--
Vdc
CollectorEmitter Cutoff Current
(VCE = 60 V, IB = 0)
TIP33B, TIP33C, TIP34B, TIP34C
ICEO
--
0.7
mA
CollectorEmitter Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
--
0.4
mA
EmitterBase Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
--
1.0
mA
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 1.0 A, VCE = 4.0 V)
(IC = 3.0 A, VCE = 4.0 V)
hFE
40
20
--
100
--
CollectorEmitter Saturation Voltage
(IC = 3.0 A, IB = 0.3 A)
(IC = 10 A, IB = 2.5 A)
VCE(sat)
--
--
1.0
4.0
Vdc
BaseEmitter On Voltage
(IC = 3.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
VBE(on)
--
--
1.6
3.0
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain
(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz)
hfe
20
--
--
CurrentGain -- Bandwidth Product
(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz)
fT
3.0
--
MHz
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
v
2.0%.
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
20
1.0
50
100
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
1.0
0.1
2.0
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT
1.0 ms
dc
300
s
5.0
3.0
15
10
I C
, COLLECT
OR CURRENT
(AMPS)
10 ms
0.2
0.5
2.0
3.0
5.0 7.0
30
70
TC = 25
C
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
60
0
80
100
Figure 3. Maximum Rated Forward Bias
Safe Operating Area
0
10
15
20
I C
, COLLECT
OR CURRENT
(AMPS)
5.0
20
40
TIP33B
TIP34B
TIP33C
TIP34C
TIP33B
TIP34B
TIP33C
TIP34C
L = 200
H
IC/IB
5.0
VBE(off) = 0 to 5.0 V
TC = 100
C
FORWARD BIAS
The Forward Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during forward bias. The data is based on TC = 25
_
C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10%, and must be der-
ated thermally for TC > 25
_
C.
REVERSE BIAS
The Reverse Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during reverse biased turnoff. This rating is verified under
clamped conditions so the device is never subjected to an
avalanche mode.
TIP33B TIP33C TIP34B TIP34C
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 340D01
TO218AC
ISSUE A
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
D
V
G
K
S
L
U
B
Q
E
C
J
H
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
19.00
19.60
0.749
0.771
B
14.00
14.50
0.551
0.570
C
4.20
4.70
0.165
0.185
D
1.00
1.30
0.040
0.051
E
1.45
1.65
0.058
0.064
G
5.21
5.72
0.206
0.225
H
2.60
3.00
0.103
0.118
J
0.40
0.60
0.016
0.023
K
28.50
32.00
1.123
1.259
L
14.70
15.30
0.579
0.602
Q
4.00
4.25
0.158
0.167
S
17.50
18.10
0.689
0.712
U
3.40
3.80
0.134
0.149
V
1.50
2.00
0.060
0.078
1
2
3
4
TIP33B TIP33C TIP34B TIP34C
4
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
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TIP33B/D
*TIP33B/D*