1
Motorola Bipolar Power Transistor Device Data
High Voltage NPN Silicon
Power Transistors
. . . designed for line operated audio output amplifier, Switchmode power supply
drivers and other switching applications.
250 V to 400 V (Min) -- VCEO(sus)
1 A Rated Collector Current
Popular TO220 Plastic Package
MAXIMUM RATINGS
Rating
Symbol
TIP47
TIP48
TIP49
TIP50
Unit
CollectorEmitter Voltage
VCEO
250
300
350
400
Vdc
CollectorBase Voltage
VCB
350
400
450
500
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
1.0
2.0
Adc
Base Current
IB
0.6
Adc
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
40
0.32
Watts
W/
_
C
Total Power Dissipation
@ TA = 25
_
C
Derate above 25
_
C
PD
2.0
0.016
Watts
W/
_
C
Unclamped Inducting Load
Energy (See Figure 8)
E
20
mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
3.125
_
C/W
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
0
100
0
10
160
20
30
60
80
40
140
40
20
120
P
D
, POWER DISSIP
A
TION (W
A
TTS)
TC
TC
0
1
2
3
4
TA
TA
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP47/D
Motorola, Inc. 1995
TIP47
TIP49
TIP48
TIP50
1.0 AMPERE
POWER TRANSISTORS
NPN SILICON
250 300 350 400 VOLTS
40 WATTS
*Motorola Preferred Device
*
*
*
*
CASE 221A06
TO220AB
REV 1
TIP47 TIP49 TIP48 TIP50
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
TIP47
(IC = 30 mAdc, IB = 0)
TIP48
TIP49
TIP50
VCEO(sus)
250
300
350
400
--
--
--
--
Vdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
TIP47
(VCE = 200 Vdc, IB = 0)
TIP48
(VCE = 250 Vdc, IB = 0)
TIP49
(VCE = 300 Vdc, IB = 0)
TIP50
ICEO
--
--
--
--
1.0
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 350 Vdc, VBE = 0)
TIP47
(VCE = 400 Vdc, VBE = 0)
TIP48
(VCE = 450 Vdc, VBE = 0)
TIP49
(VCE = 500 Vdc, VBE = 0)
TIP50
ICES
--
--
--
--
1.0
1.0
1.0
1.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
hFE
30
10
150
--
--
CollectorEmitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
VCE(sat)
--
1.0
Vdc
BaseEmitter On Voltage
(IC = 1.0 Adc, VCE = 10 Vdc)
VBE(on)
--
1.5
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz)
fT
10
--
MHz
SmallSignal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
--
--
(1) Pulse Test: Pulse width
v
300
s, Duty Cycle
v
2.0%.
TURNON PULSE
APPROX
+11 V
Vin 0
VEB(off)
t1
APPROX
+11 V
Vin
t2
TURNOFF PULSE
t3
t1
7.0 ns
100 < t2 < 500
s
t3 < 15 ns
DUTY CYCLE
2.0%
APPROX 9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
4.0 V
Figure 2. Switching Time Equivalent Circuit
0.02
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (AMPS)
0.01
0.1
2.0
1.0
TJ = 25
C
VCC = 200 V
IC/IB = 5.0
t,
TIME (
s)
0.5
0.2
0.1
0.05
0.05
0.5
0.02
1.0
tr
0.2
td
TIP47 TIP49 TIP48 TIP50
3
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1.0
0.01
0.01
0.1
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
1.0
1.0
100
Z
JC(t) = r(t) R
JC
R
JC = 3.125
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) Z
JC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.02
0.01
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02
0.05
0.2
0.5
2.0
5.0
200
500
10
20
50
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
20
5.0
50
500
Figure 5. Active Region Safe Operating Area
0.02
0.05
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ 25
C
BONDING WIRE LIMITED
1.0 ms
dc
100
s
0.2
0.1
5.0
2.0
I C
, COLLECT
OR CURRENT
(AMPS)
CURVES APPLY
BELOW RATED VCEO
1.0
0.5
100
200
500
s
TC
25
C
TIP47
TIP48
TIP49
TIP50
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
0.1
0.2
0.02
0.5
IC, COLLECTOR CURRENT (AMPS)
Figure 6. TurnOff Time
5.0
t,
TIME (
s)
2.0
1.0
0.5
0.2
0.1
0.05
1.0
2.0
ts
TJ = 25
C
VCC = 200 V
IC/IB = 5.0
tf
IC, COLLECTOR CURRENT (AMPS)
+ 4.5
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+ 3.5
+ 2.5
+ 1.5
0
0.5
1.5
2.5
*APPLIES FOR IC/IB
hFE/5
VC FOR VCE(sat)
VB FOR VBE
Figure 7. Temperature Coefficients
0.02
0.05
0.1
0.2
0.5
1.0
2.0
+ 25
C to + 150
C
55
C to + 25
C
+ 25
C to + 150
C
55
C to + 25
C
+ 0.5
TIP47 TIP49 TIP48 TIP50
4
Motorola Bipolar Power Transistor Device Data
Figure 8. Inductive Load Switching
Note A: Input pulse width is increased until ICM = 0.63 A.
INPUT
50
MJE171
RBB1 =
150
100 mH
RBB2 =
100
VBB2 =
0
VBB1 = 10 V
VCE MONITOR
TUT
VCC = 20 V
IC MONITOR
RS =
0.1
50
0.63 A
0 V
5 V
tw
3 ms
(SEE NOTE A)
INPUT
VOLTAGE
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
VCER
0 V
10 V
100 ms
VCE(sat)
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
Figure 9. DC Current Gain
100
200
0.04 0.06
0.2
2.0
0.02
60
40
20
10
6.0
4.0
0.1
Figure 10. "On" Voltages
VCE = 10 V
2.0
0.6
1.0
0.4
25
C
TJ = 150
C
55
C
1.4
0.02
IC, COLLECTOR CURRENT (AMPS)
1.0
0.8
0.4
1.2
0.6
0.2
0
0.04 0.06
0.1
0.2
0.4 0.6
V
, VOL
T
AGE (VOL
TS)
1.0
2.0
VBE(sat) @ IC/IB = 5.0 V
VBE(on) @ VCE = 4 V
VCE(sat) @ IC/IB = 5.0 V
TIP47 TIP49 TIP48 TIP50
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
TIP47 TIP49 TIP48 TIP50
6
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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