Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0700
V4.00
Features
Cascadable 50
Gain Block
Low Operating Voltage (4.0 V Typical Vd)
3dB Bandwidth: DC to 2.0 GHz
11.5 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Description
M-Pulse's MP4TD0700 is a high performance silicon
bipolar MMIC chip. The MP4TD0700 is designed for
use where a general purpose 50
gain block is required.
Typical applications include narrow and wide band IF
and RF amplifiers in industrial and military applications.
The MP4TD0700 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
1 0
1 2
1 4
0 .1
1
1 0
FR E Q U EN C Y (G H z)
GA
I
N
(
d
B
)
Id = 22 m A
G ain F lat to D C
Chip Outline Drawing
1,2,3,4
RF Input
Ground
Optional RF Output & +4.0 Volts
Optional +5 Volts
Optional +12 Volts
Optional +15 Volts
375
(14.8 mil)
375
(14.8 mil)
Notes: (unless otherwise specified)
1. Chip Thickness is 120
m; 4.8 mils
2. Bond Pads are 40
m; 1.6 mils typical in diameter
3. Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:
m .xx =
.13; mil .x =
.5
Ordering Information
Model No.
Type of Carrier
MP4TD0700G GEL
PACK
MP4TD0700W Waffle
Pack
Electrical Specifications @ T
A
= +25
C, Id = 22 mA; Z0 = 50
Symbol
Parameters
Test Conditions
Units
Min.
Typ.
Max.
Gp
Power Gain (
S21
2)
f = 0.1 GHz
dB
-
13.5
-
Gp
Gain Flatness
f = 0.1 to 1.0 GHz
dB
-
+ 0.6
-
f
3dB
3 dB Bandwidth
-
GHz
-
1.5
-
SWR
in
Input SWR
f = 0.1 to 2.0 GHz
-
-
1.6
-
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
-
-
1.5
-
P
1dB
Output Power @ 1dB Gain Compression
f = 1.0 GHz
dBm
-
5.5
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
4.5
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
19.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
140
-
V
d
Device
Voltage
-
V 3.6 4.0 4.4
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -7.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0700
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
80 mA
Power Dissipation
2,3
275
mW
RF Input Power
+13 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jms
= 50
C/W
1. Exceeding these limits may cause permanent damage.
2. Mounting Surface Temperature (TMS)= 25
C.
3. Derate at 20 mW/
C for TMS > 186
C
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 7 V
Vd = 5.0 V
Id =
Vcc - Vd
Rbias
MP4TD0700
Typical Performance Curves @ Id = 22 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
5
1 0
1 5
2 0
2 5
3 0
3 5
4 0
0
1
2
3
4
5
Vd, D EV IC E VO L TA GE (V)
I
d
,
DE
VI
CE
CURRE
NT
(
m
A
)
POWER GAIN vs CURRENT
0
2
4
6
8
10
12
14
0
10
2 0
30
4 0
50
Id, D E VIC E C U R R E N T (m A)
GA
I
N
(
d
B
)
f= 0.1 G H z
f= 0 .5 G H z
f= 1.0 G H z
f= 2.0 GH z
RETURN LOSS vs FREQUENCY
-3 5
-3 0
-2 5
-2 0
-1 5
-1 0
-5
0 .1
1
1 0
F R EQ U E N C Y (G H z)
RE
T
URN L
O
S
S
(
d
B
)
IN P U T
O U TP U T
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
0
2
4
6
8
1 0
1 2
1 4
1 6
0 .1
1
1 0
FR E Q U EN C Y (G H z)
P
OU
T
-1
dB
(dB
m
)
Id = 22 m A
I d= 40 m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0700
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
3
3.5
4
4.5
5
5.5
6
0 .1
1
1 0
F R EQ U E N C Y (G H z)
NO
I
S
E
F
I
G
URE
(
d
B
)
I d= 1 5m A
I d= 2 2m A
Id = 40 m A
REVERSE ISOLATION vs FREQUENCY
-2 1
-1 9
-1 7
-1 5
-1 3
-1 1
-9
-7
-5
0 .1
1
1 0
F R EQ U E N C Y (G H z)
RE
VE
RS
E
I
S
O
L
AT
I
O
N (
d
B
)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 22 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.042
96.5
4.73
171.5
0.098
9.3
0.033
-52.9
0.2 0.082
97.3
4.72
164.3
0.104
6.2
0.034
-56.2
0.4
0.153 107.3 4.70 150.9 0.116 15.6 0.051 -80.9
0.6
0.185 116.5 4.27 136.9 0.121 20.6 0.071
-103.6
0.8
0.198 128.5 4.03 122.4 0.132 25.7 0.083
-115.6
1.0
0.200 139.6 3.85 110.7 0.143 29.0 0.087
-123.9
1.5
0.203
165.4 3.24 86.3 0.180 34.7 0.086
-138.1
2.0
0.200
173.6 2.64 60.3 0.215 35.7 0.088
-150.0
2.5
0.180
174.2 2.16 46.9 0.243 33.0 0.082
-163.7
3.0
0.152
162.8 1.86 33.5 0.267 31.8 0.087
-163.6
3.5
0.123
144.0 1.69 20.5 0.296 30.3 0.119
-166.8
4.0
0.149 101.8 1.50 114.8 0.318 27.9 0.139
-171.4
4.5 0.250 84.1 1.45 4.7 0.355 25.8 0.183
-170.8
5.0
0.337 79.6 1.34 -2.9 0.389 21.7 0.229
-175.4
6.0
0.485 72.4 1.19 -12.9 0.456 16.5 0.272
178.3
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