149
1
2
3
6
5
4
Lower output capacitance
and on resistance.
High speed switching.
(Turn on time: 0.1ms,
Turn off time: 0.05ms).
mm
inch
6.3
0.2
.248
.008
4.4
0.2
.173
.008
2.1
0.2
.083
.008
FEATURES
1. 1-channel (Form A) in super
miniature design
The device comes in a super-miniature
SO package measuring (W) 4.4
(L) 6.3
(H) 2.1 mm
(W).173
(L) .248
(H) .083
inch
--approx. 25% of the volume and
50% of the footprint size of DIP type
PhotoMOS Relays.
2. Low capacitance between output
terminals ensure high response
speed:
The capacitance between output
terminals is small, typically 10 pF. This
enables for a fast operation speed of 200
s.
3. Low-level off state leakage current:
The SSR has an off state leakage current
of several milliamperes, whereas the
Volume
(SOP)
(DIP)
Approx. 25%
Footprint
Approx. 50%
PhotoMOS relay has only 30 pA even with
the rated load voltage of 80 V
(AQV225NS).
4. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
5. Tape and reel
The device comes standard in a tape and
reel (1,000 pcs./reel) to facilitate
automatic insertion machines.
TYPICAL APPLICATIONS
Telephones
Measuring instruments
Computer
Industrial robots
High-speed inspection machines
TYPES
1. AC/DC type
*Indicate the peak AC and DC values.
Notes: (1) Tape package is the standard packing style. Also available in tube. (Part No. suffix "X" or "Z" is not needed when ordering; Tube: 75 pcs.;
Case: 1,500 pcs.)
(2) For space reasons, the top two letters of the product number "AQ" are omitted on the product seal. The package type indicator "X" and "Z"
are also omitted from the seal. (Ex. the label for product number AQV224NS is V224NS).
Output rating*
Part No.
Packing quantity in tape and reel
Picked from the 1/2/3-pin side
Picked from the 4/5/6-pin side
Load voltage
Load current
1 Form A
1 Form A
80 V
120 mA
AQV225NSX
AQV225NSZ
1,000 pcs.
200 V
50 mA
AQV227NSX
AQV227NSZ
400 V
40 mA
AQV224NSX
AQV224NSZ
RATING
1. Absolute maximum ratings (Ambient temperature: 25
C
77
F
)
Item
Symbol
Type of
connecti
on
AQV225NS
AQV227NS
AQV224NS
Remarks
Input
LED forward current
I
F
50 mA
LED reverse voltage
V
R
5 V
Peak forward current
I
FP
1 A
f = 100 Hz, Duty factor = 0.1%
Power dissipation
P
in
75 mW
Output
Load voltage (peak AC)
V
L
80 V
200 V
400 V
Continuous load current
I
L
A
0.12 A
0.05 A
0.04 A
A connection: Peak AC, DC
B, C connection: DC
B
0.15 A
0.06 A
0.05 A
C
0.25 A
0.08 A
0.06 A
Peak load current
I
peak
0.36 A
0.15 A
0.12 A
A connection: 100 ms (1 shot),
V
L
= DC
Power dissipation
P
out
450 mW
Total power dissipation
P
T
500 mW
I/O isolation voltage
V
iso
1,500 V AC
Temperature
limits
Operating
T
opr
40
C to +85
C
40
F to +185
F
Non-condensing at low
temperatures
Storage
T
stg
40
C to +100
C
40
F to +212
F
RF PhotoMOS
(AQV22
NS)
RF PhotoMOS (AQV22
NS)
150
2. Electrical characteristics (Ambient temperature: 25
C
77
F
)
For type of connection, see Page 31.
Note: Recommendable LED forward current I
F
= 5 mA.
*Turn on/Turn off time
Item
Symbol
Type of
connecti
on
AQV225NS
AQV227NS
AQV224NS
Remarks
Input
LED operate current
Typical
I
Fon
--
0.7 mA
I
L
= Max.
Maximum
3 mA
LED turn off current
Minimum
I
Foff
--
0.4 mA
I
L
= Max.
Typical
0.65 mA
LED dropout voltage
Typical
V
F
--
1.25 V (1.14 V at I
F
= 5 mA)
I
F
= 50 mA
Maximum
1.5 V
Output
On resistance
Typical
R
on
A
7.0
30
70
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum
10.0
50
100
Typical
R
on
B
3.5
16
55
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum
5.0
25
70
Typical
R
on
C
1.8
8
28
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum
2.5
12.5
35
Output capacitance
Typical
C
out
10 pF
I
F
= 0
V
B
= 0
f = 1 MHz
Maximum
15 pF
Off state leakage current
Typical
I
leak
--
30 pA
90 pA
I
F
= 0
V
L
= Max.
Maximum
10 nA
Transfer
characteristics
Turn on time*
Typical
T
on
--
0.25 ms
0.12 ms
0.1 ms
I
F
= 5 mA
I
L
= Max.
Maximum
0.5 ms
Turn off time*
Typical
T
off
--
0.05 ms
I
F
= 5 mA
I
L
= Max.
Maximum
0.2 ms
I/O capacitance
Typical
C
iso
--
0.8 pF
f = 1 MHz
V
B
= 0
Maximum
1.5 pF
Initial I/O isolation
resistance
Minimum
R
iso
--
1,000 M
500 V DC
Ton
Input
Output
10%
90%
Toff
I
For Dimensions, see Page 28.
I
For Schematic and Wiring Diagrams, see Page 31.
I
For Cautions for Use, see Page 36.
REFERENCE DATA
1. Load current vs. ambient temperature
characteristics
Allowable ambient temperature: 40
C to +85
C
40
F to +185
F
Type of connection: A
2.-(1) On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 5 mA;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
2.-(2) On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 5 mA;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
50
100
150
0
20
40
60
20
8085 100
40
AQV225NS
AQV227NS
AQV224NS
Ambient temperature,
C
Load current, mA
0
4.0
6.0
8.0
10.0
40
12.0
0
20
20
40
60
80 85
2.0
AQV225NS
On resistance,
Ambient temperature,
C
0
40
60
80
100
40
120
0
20
20
40
60
80 85
20
AQV224NS
AQV227NS
Ambient temperature,
C
On resistance,
RF PhotoMOS (AQV22
NS)
151
3. Turn on time vs. ambient temperature
characteristics
LED current: 5 mA;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
4. Turn off time vs. ambient temperature
characteristics
LED current: 5 mA;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate current vs. ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
0.4
0.6
40
1.0
0
20
40
60
80
0.2
0.8
20
AQV225NS
AQV227NS
AQV224NS
85
Turn on time, ms
Ambient temperature,
C
0
0.2
0.3
40
0.5
0
20
40
60
80
0.1
0.4
20
AQV225NS
85
AQV227NS
AQV224NS,
Ambient temperature,
C
Turn off time, ms
0
2
3
40
5
0
20
40
60
80
1
4
20
AQV225NS
AQV227NS
85
AQV224NS
LED operate current, mA
Ambient temperature,
C
6. LED turn off current vs. ambient temperature
characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
7. LED dropout voltage vs. ambient
temperature characteristics
Sample: All types;
LED current: 5 to 50 mA
8. Voltage vs. current characteristics of output
at MOS portion
Measured portion: between terminals 5 and 6,
7 and 8;
Ambient temperature: 25
C
77
F
0
2
3
40
5
0
20
40
60
80
1
4
20
AQV225NS
85
AQV227NS
AQV224NS
Ambient temperature,
C
LED turn off current, mA
0
1.0
1.1
1.2
1.3
40
0
20
20
40
60
80
1.4
50mA
30mA
20mA
10mA
5mA
1.5
85
Ambient temperature,
C
LED dropout voltage, V
4
3
1
4
3
1
150
50
150
50
100
100
2
2
AQV225NS
AQV227NS
AQV224NS
Voltage, V
Current, mA
9. Off state leakage current
Measured portion: between terminals 4 and 6;
Ambient temperature: 25
C
77
F
10. LED forward current vs. turn on time
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC);
Continuous load current: Max. (DC);
Ambient temperature: 25
C
77
F
11. LED forward current vs. turn off time
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC);
Continuous load current: Max. (DC);
Ambient temperature: 25
C
77
F
0
300
400
10
6
10
9
10
12
AQV224NS
100
200
AQV227NS
AQV225NS
Load voltege, V
Off state leakage current, A
0
0.2
0.4
0.6
0.8
1.4
1.0
10
20
30
40
50
60
AQV225NS
1.2
0
AQV224NS,AQV227NS
LED forward current, mA
Turn on time, ms
0
0.06
0.10
0.18
0.14
10
20
30
40
0.22
50
60
AQV225NS AQV224NS
0
AQV227NS
LED forward current, mA
Turn off time, ms
12. Applied voltage vs. output capacitance
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz, 30 mVrms;
Ambient temperature: 25
C
77
F
13. Isolation characteristics
(50
impedance)
Measured portion: between terminals 4 and 6;
Ambient temperature: 25
C
77
F
14. Insertion loss characteristics
(50
impedance)
Measured portion: between terminals 4 and 6;
Ambient temperature: 25
C
77
F
0
2
4
12
20
40
60
80
100
6
8
0
AQV225NS
10
AQV227NS
AQV224NS
Applied voltage, V
Output capacitance, pF
0
10
10
10
6
7
10
40
60
80
20
100
4
5
AQV224NS
AQV225NS,AQV227NS
Frequency, Hz
Isolation, dB
0
10
10
10
6
7
10
2
3
4
1
5
4
5
AQV224NS
6
AQV227NS
AQV225NS
Frequency, Hz
Insertion loss, dB
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