125
TESTING
VDE
(Reinforced type)
(Standard type)
1
2
3
6
5
4
GU (General Use)-E Type
[1-Channel (Form B) Type]
mm
inch
8.8
0.05
.346
.002
6.4
0.05
.252
.002
3.6
0.2
.142
.008
8.8
0.05
.346
.002
6.4
0.05
.252
.002
3.9
0.2
.154
.008
FEATURES
1. Low on resistance for normally-
closed type
This has been realized thanks to the built-
in MOSFET processed by our proprietary
method, DSD (Double-diffused and Se-
lective Doping) method.
,
,
,
,
Source electrode
N
N
+
N
+
N
+
P
+
N
+
N
+
P
+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
2. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
3. High sensitivity, low ON resistance
Can control a maximum 0.13 A load cur-
rent with a 5 mA input current. Low ON re-
sistance of 18
(AQV410EH). Stable
operation because there are no metallic
contact parts.
4. Low-level off state leakage current
The SSR has an off state leakage current
of several milliamperes, whereas the Pho-
toMOS relay has only 100 pA even with
the rated load voltage of 400 V
(AQV414E).
5. Reinforced insulation 5,000 V type
also available.
More than 0.4 mm internal insulation dis-
tance between inputs and outputs. Con-
forms to EN41003, EN60950 (reinforced
insulation).
TYPICAL APPLICATIONS
Security equipment
Telepone equipment (Dial pulse)
Measuring equipment
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal.
Type
I/O isolation
voltage
Output rating*
Part No.
Packing quantity
Through hole
terminal
Surface-mount terminal
Load
voltage
Load
current
Tube packing style
Tape and reel packing style
Tube
Tape and reel
Picked from the
1/2/3-pin side
Picked from the
4/5/6-pin side
AC/DC
type
1,500 V AC
(Standard)
400 V
120 mA
AQV414E
AQV414EA
AQV414EAX
AQV414EAZ
1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
5,000 V AC
(Reinforced)
350 V
130 mA
AQV410EH
AQV410EHA
AQV410EHAX
AQV410EHAZ
400 V
120 mA
AQV414EH
AQV414EHA
AQV414EHAX
AQV414EHAZ
RATING
1. Absolute maximum ratings (Ambient temperature: 25
C
77
F
)
Item
Symbol
Type of
connection
AQV414E(A)
AQV410EH(A)
AQV414EH(A)
Remarks
Input
LED forward current
I
F
50 mA
LED reverse voltage
V
R
3 V
Peak forwrd current
I
FP
1 A
f = 100 Hz, Duty factor = 0.1%
Power dissipation
P
in
75 mW
Output
Load voltage (peak AC)
V
L
400 V
350 V
400 V
Continuous load current
I
L
A
0.12 A
0.13 A
0.12 A
A connection: Peak AC, DC
B,C connection: DC
B
0.13 A
0.15 A
0.13 A
C
0.15 A
0.17 A
0.15 A
Peak load current
I
peak
0.3 A
0.4 A
0.3 A
A connection: 100 ms (1 shot),
V
L
= DC
Power dissipation
P
out
500 mW
Total power dissipation
P
T
550 mW
I/O isolation voltage
V
iso
1,500 V AC
5,000 V AC
5,000 V AC
Temperature
limits
Operating
T
opr
40
C to +85
C
40
F to +185
F
Non-condensing at low
temperatures
Storage
T
stg
40
C to +100
C
40
F to +212
F
PhotoMOS
RELAYS
AQV414E, AQV41
r
EH
126
2. Electrical characteristics (Ambient temperature: 25
C
77
F
)
For type of connection, see Page 32.
Note: Recommendable LED forward current
Standard type I
F
= 5 mA
Reinforced type I
F
= 5 to 10 mA
*Operate/Reverse time
Item
Symbol
Type of
connec-
tion
AQV414E(A)
AQV410EH(A)
AQV414EH(A)
Condition
Input
LED operate (OFF) current
Typical
I
Foff
--
1.45 mA
1.9 mA
1.75 mA
I
L
= Max.
Maximum
3.0 mA
LED reverse (ON) current
Minimum
I
Fon
--
0.3 mA
0.4 mA
0.3 mA
I
L
= Max.
Typical
1.40 mA
1.8 mA
1.70 mA
LED dropout voltage
Typical
V
F
--
1.14 V (1.25 V at I
F
= 50 mA)
I
F
= 5 mA
Maximum
1.5 V
Output
On resistance
Typical
R
on
A
26
18
25.2
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
Maximum
50
35
50
Typical
R
on
B
20
13
19
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
Maximum
25
17.5
25
Typical
R
on
C
10
6.5
10
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
Maximum
12.5
8.8
12.5
Off state leakage current
Maximum
I
Leak
--
1
A
10
A
10
A
I
F
= 5 mA
V
L
= Max.
Transfer
characteristics
Switching
speed
Operate
(OFF) time*
Typical
T
off
--
0.7 ms
1.5 ms
1.3 ms
I
F
= 0 mA
5 mA
I
L
= Max.
Maximum
2.0 ms
3.0 ms
3.0 ms
Reverse
(ON) time*
Typical
T
on
--
0.1 ms
0.3 ms
0.3 ms
I
F
= 5 mA
0 mA
I
L
= Max.
Maximum
1.0 ms
1.5 ms
1.5 ms
I/O capacitance
Typical
C
iso
--
0.8 pF
0.8 pF
0.8 pF
f = 1 MHz
V
B
= 0
Maximum
1.5 pF
Initial I/O isolation
resistance
Minimum
R
iso
--
1,000 M
500 V DC
Toff
Input
Output
10%
90%
Ton
s
For Dimensions, see Page 27.
s
For Schematic and Wiring Diagrams, see Page 32.
s
For Cautions for Use, see Page 36.
REFERENCE DATA
1. Load current vs. ambient temperature char-
acteristics
Allowable ambient temperature: 40
C to +85
C
40
F to +185
F
Type of connection: A
2. On resistance vs. ambient temperature char-
acteristics
Measured portion: between terminals 4 and 6;
LED current: 0 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
3. Operate (OFF) time vs. ambient temperature
characteristics
LED current: 5mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
Ambient temperature,
C
Load current, mA
0
40
60
80
100
140
120
0
20
40
60
80
100
40 20
20
85
AQV410EH
AQV414E(H)
Ambient temperature,
C
On resistance,
0
10
20
30
40
40
20
50
0
20
40
60
8085
AQV410EH
AQV414(EH)
Ambient temperature,
C
Operate (OFF) time, ms
0
2.0
3.0
40
20
5.0
0
20
40
60
80
1.0
4.0
85
AQV410EH
AQV414E
AQV414EH
AQV414E, AQV41
r
EH
127
4. Reverse (ON) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate (OFF) current vs. ambient tem-
perature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
6. LED reverse (ON) current vs. ambient tem-
perature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
Ambient temperature,
C
Reverse (ON) time, ms
0
20
40
20
40
60
80 85
0.8
0.6
0.4
0.2
0
AQV410EH
AQV414E
AQV414EH
Ambient temperature,
C
LED operate (OFF) curremt, mA
0
1
2
3
4
40
20
5
0
20
40
60
8085
AQV410EH
AQV414E
AQV414EH
Ambient temperature,
C
LED reverse (ON) current, mA
0
1
2
3
4
40
20
5
0
20
40
60
80 85
AQV410EH
AQV414E
AQV414EH
7. LED dropout voltage vs. ambient tempera-
ture characteristics
LED current: 5 to 50 mA
8. Voltage vs. current characteristics of output
at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25
C
77
F
9. Off state leakage current
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Ambient temperature: 25
C
77
F
Ambient temperature,
C
LED dropout voltage, V
0
40
20
20
40
60
80 85
1.5
1.4
1.3
1.2
1.1
1.0
0
50mA
30mA
20mA
10mA
5mA
20
40
60
80
140
120
100
3
2
1
2.5
1.5
0.5
0.5
3
1.5
2.5
1
2
20
40
60
80
100
120
140
AQV410EH
AQV414E
AQV414EH
Current, mA
Voltage, V
Load voltage, V
Off state leakage current, A
20
0
60
40
80
100
10
3
10
6
10
9
10
12
10. LED forward current vs. operate (OFF) time
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
C
77
F
11. LED forward current vs. reverse (ON) time
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
C
77
F
12. Applied voltage vs. output capacitance
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz;
Ambient temperature: 25
C
77
F
LED forward current, mA
Operate (OFF) time, ms
0
2.0
4.0
6.0
8.0
10.0
10
20
30
40
50
AQV414E
AQV410EH
AQV414EH
LED forward current, mA
Reverse (ON) time, ms
10
20
30
40
50
60
10
0
20
30
40
50
60
0.5
0.4
0.3
0.2
0.1
0
AQV414E
AQV410EH
AQV414EH
Applied voltage, V
Output capacitance, pF
0
20
40
100
10
20
30
40
50
60
80
120
5/7/2001
All Rights Reserved, Copyright Matsushita Electric Works, Ltd.
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