168
(Standard type)
TESTING
(Standard type)
1
2
3
6
5
4
HE (High-function Economy)
Type
1- Channel (Form B) Type
mm
inch
8.8
0.05
.346
.002
6.4
0.05
.252
.002
3.9
0.2
.154
.008
8.8
0.05
.346
.002
6.4
0.05
.252
.002
3.6
0.2
.142
.008
FEATURES
1. Form B (Normally-closed) type
Has been realized thanks to the built-in
MOSFET processed by our proprietary
method, DSD (Double-diffused and Se-
lective Doping) method.
,
,
,
Source electrode
N
N
+
N
+
N
+
P
+
N
+
N
+
P
+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
2. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
3. High sensitivity, low ON resistance
Can control a maximum 0.15 A load cur-
rent with a 5 mA input current. Low ON re-
sistance of 16
(AQV454). Stable
operation because there are no metallic
contact parts.
4. Controls various types of load such
as relays, motors, lamps and sole-
noids.
5. Eliminates the need for a power sup-
ply to drive the power MOSFET
A power supply used to drive the power
MOSFET is unnecessary because of the
built-in optoelectronic device. This results
in easy circuit design and small PC board
area.
6. Low thermal electromotive force
(Approx. 1
V) (Basic insulation)
7. Reinforced insulation 5,000 V type
also available.
More than 0.4 mm
.016 inch
internal insu-
lation distance between inputs and out-
puts. Conforms to IEC950 (reinforced
insulation).
TYPICAL APPLICATIONS
Security equipment
High-speed inspection machines
Measuring instruments
Telephone equipment
Sensors
TYPES
* Indicate the peak AC and DC values.
Note: For space reasons, the package type indicator "X"and "Z" are omitted from the seal.
Type
I/O isolation
Output rating*
Part No.
Packing quantity
Load
voltage
Load
current
Through hole
terminal
Surface-mount terminal
Tube packing style
Tape and reel packing style
Tube
Tape and reel
Picked from the
1/2/3-pin side
Picked from the
4/5/6-pin side
AC/DC
1,500 V AC
250 V
200 mA
AQV453
AQV453A
AQV453AX
AQV453AZ
1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
400 V
150 mA
AQV454
AQV454A
AQV454AX
AQV454AZ
Reinforced
5,000 V AC
AQV454H
AQV454HA
AQV454HAX
AQV454HAZ
PhotoMOS
RELAYS
AQV45
r
169
RATING
1. Absolute maximum ratings (Ambient temperature: 25
C
77
F
)
2. Electrical characteristics (Ambient temperature: 25
C
77
F
)
For type of connection, see Page 32.
Note: Recommendable LED forward current.
Standard type: I
F
= 5 mA
Reinforced type: I
F
= 5 to 10 mA
*Operate/Reverse time
Item
Symbol
Type of
connec-
tion
AQV453(A)
AQV454(A)
AQV454H(A)
Remarks
Input
LED forward current
I
F
50 mA
LED reverse voltage
V
R
3 V
Peak forward current
I
FP
1 A
f = 100 Hz, Duty factor = 0.1%
Power dissipation
P
in
75 mW
Output
Load voltage (peak AC)
V
L
250 V
400 V
Continuous load current
I
L
A
0.2 A
0.15 A
A connection: Peak AC, DC
B,C connection: DC
B
0.3 A
0.18 A
C
0.4 A
0.25 A
Peak load current
I
PEAK
0.6 A
0.5 A
A connection: 100 ms (1 shot),
V
L
= DC
Power dissipation
P
OUT
360 mW
Total power dissipation
P
T
410 mW
I/O isolation voltage
V
iso
1,500 V AC
5,000 V AC
Temperature
limits
Operating
T
opr
40
C to +85
C
40
F to +185
F
Non-condensing at low
temperatures
Storage
T
stg
40
C to +100
C
40
F to +212
F
Item
Symbol
Type of
connec-
tion
AQV453(A)
AQV454(A)
AQV454H(A)
Remarks
Input
LED operate (OFF)
current
Typical
I
Foff
--
1 mA
0.9 mA
1.4 mA
I
L
= Max.
Maximum
3 mA
LED reverse (ON) current
Minimum
I
Fon
--
0.4 mA
I
L
= Max.
Typical
0.9 mA
0.8 mA
1.3 mA
LED dropout voltage
Typical
V
F
--
1.14 V (1.25V at I
F
=50 mA)
I
F
= 5 mA
Maximum
1.5 V
Output
On resistance
Typical
R
on
A
5.5
10.5
10.5
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
Maximum
8
16
16
Typical
R
on
B
2.7
6.3
6.3
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
Maximum
4
8
8
Typical
R
on
C
1.4
3.1
3.1
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
Maximum
2
4
4
Off state leakage current
Maximum
I
Leak
--
1
A
10
A
10
A
I
F
= 5 mA
V
L
= Max.
Transfer
characteristics
Switching
speed
Operate
(OFF) time*
Typical
T
off
--
1.52 ms
1.2 ms
1.8 ms
I
F
= 0 mA
5 mA
I
L
= Max.
Maximum
3 ms
2.0 ms
3.0 ms
Reverse
(ON) time*
Typical
T
on
--
0.4 ms
0.36 ms
0.4 ms
I
F
= 5 mA
0 mA
I
L
= Max.
Maximum
1 ms
1.0 ms
1.0 ms
I/O capacitance
Typical
C
iso
--
1.3 pF
f = 1 MHz
V
B
= 0
Maximum
3 pF
Initial I/O isolation
resistance
Minimum
R
iso
--
1,000 M
500 V DC
Toff
Input
Output
10%
90%
Ton
s
For Dimensions, see Page 27.
s
For Schematic and Wiring Diagrams, see Page 32.
s
For Cautions for Use, see Page 36.
AQV45
r
170
REFERENCE DATA
1. Load current vs. ambient temperature char-
acteristics
Allowable ambient temperature: 40
C to +85
C
40
F to +185
F
Type of connection: A
2. On resistance vs. ambient temperature char-
acteristics
Measured portion: between terminals 4 and 6;
LED current: 0 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
3. Operate (OFF) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
50
100
200
150
0
20
40
60
20
8085100
40
Ambient temperature,
C
Load current, mA
AQV453
AQV454(H)
0
8
10
12
14
40
16
0
20
20
40
60
8085
Ambient temperature,
C
On resistance,
AQV454(H)
AQV453
0
2
3
40
5
0
20
20
40
60
8085
1
4
AQV454H
Ambient temperautre,
C
Operate (OFF) time, ms
Ambient temperautre,
C
AQV453
AQV454
4. Reverse (ON) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate (OFF) current vs. ambient tem-
perature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
6. LED reverse (ON) current vs. ambient tem-
perature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
0.5
1.0
2.0
2.5
40
0
20
20
40
60
8085
AQV454H
AQV454, AQV453
1.5
Ambient temperautre,
C
Reverse (ON) time, ms
0
1
2
3
4
40
5
0
20
20
40
60
8085
AQV454H
Ambient temperautre,
C
LED operate (OFF) current, mA
AQV454
AQV453
0
1
2
3
4
40
5
0
20
20
40
60
80
AQV454H
AQV454
Ambient temperautre,
C
LED reverse (ON) current, mA
7. LED dropout voltage vs. ambient tempera-
ture characteristics
LED current: 5 to 50 mA
8. Voltage vs. current characteristics of output
at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25
C
77
F
9. Off state leakage current
Sample: AQV454;
Measured portion: between terminals 4 and 6;
Ambient temperature: 25
C
77
F
0
1.0
1.1
1.2
1.3
40
0
20
20
40
60
80 85
1.4
50mA
30mA
20mA
10mA
5mA
1.5
Ambient temperautre,
C
LED dropout voltage, V
3
200
160
120
80
40
200
160
120
80
40
0
AQV453
AQV454(H)
1
2
3
2
1
0
Voltage, V
Current, mA
0
60
100
10
3
10
6
10
9
10
12
20
40
80
Load voltage, V
Off state leakage current, A
10. LED forward current vs. operate (OFF) time
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
C
77
F
11. LED forward current vs. reverse (ON) time
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
C
77
F
12. Applied voltage vs. output capacitance
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz; Ambient temperature: 25
C
77
F
0
2
4
6
10
8
10
20
30
40
50
60
AQV454, AQV453
AQV454H
LED forward current, mA
Opperate (OFF) time, ms
0
0.2
0.4
0.8
0.6
10
20
30
40
1.0
50
60
AQV454H
LED forward current, mA
Reverse (ON) time, ms
AQV454, AQV453
Applied voltage, V
Output capacitance, pF
0
100
400
300
200
10
20
30
40
50
0
AQV453
AQV454(H)
5/7/2001
All Rights Reserved, Copyright Matsushita Electric Works, Ltd.
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