GU-E PhotoMOS (AQY21
EH)
103
1
2
4
3
GU-E PhotoMOS
(AQY21
EH)
General use and
economy type.
DIP (1 Form A) 4-pin type.
Reinforced insulation
5,000V type.
3.2
.126
6.4
.252
4.78
.188
2.9
.114
6.4
.252
4.78
.188
FEATURES
1. Reinforced insulation 5,000 V type
More than 0.4 mm internal insulation
distance between inputs and outputs.
Con-forms to EN41003, EN60950
(reinforced insulation).
2. Compact 4-pin DIP size
The device comes in a compact
(W)6.4
(L)4.78
(H)3.2mm
(W).252
(L).188
(H).126inch
, 4-pin DIP size.
3. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
4. High sensitivity, low ON resistance
Can control a maximum 0.13 A load
current with a 5 mA input current. Low ON
resistance of 25
(AQY210EH). Stable
operation because there are no metallic
contact parts.
5. Low-level off state leakage current
The SSR has an off state leakage current
of several milliamperes, whereas the
PhotoMOS relay has only 100 pA even
with the rated load voltage of 350 V
(AQY210EH).
TYPICAL APPLICATIONS
Modem
Telephone equipment
Security equipment
Sensors
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the initial letters of the product number "AQY", the SMD terminal shape indicator "A" and the package type indicator "X" and
"Z" are omitted from the seal.
Type
I/O isolation
voltage
Output rating*
Part No.
Packing quantity
Through hole
terminal
Surface-mount terminal
Load
voltage
Load
current
Tube packing style
Tape and reel packing style
Tube
Tape and
reel
Picked from the
1/2-pin side
Picked from the
3/4-pin side
AC/DC
type
Reinforced
5,000 V
30 V
1,000 mA
AQY211EH
AQY211EHA
AQY211EHAX
AQY211EHAZ
1 tube contains
100 pcs.
1 batch contains
1,000 pcs.
1,000 pcs.
60 V
550 mA
AQY212EH
AQY212EHA
AQY212EHAX
AQY212EHAZ
350 V
130 mA
AQY210EH
AQY210EHA
AQY210EHAX
AQY210EHAZ
400 V
120 mA
AQY214EH
AQY214EHA
AQY214EHAX
AQY214EHAZ
600 V
50 mA
AQY216EH
AQY216EHA
AQY216EHAX
AQY216EHAZ
RATING
1. Absolute maximum ratings (Ambient temperature: 25
C
77
F
)
Item
Symbol AQY211EH(A)
AQY212EH(A)
AQY210EH(A)
AQY214EH(A)
AQY216EH(A)
Remarks
Input
LED forward current
I
F
50mA
LED reverse voltage
V
R
5 V
Peak forward current
I
FP
1 A
f =100 Hz,
Duty factor = 0.1%
Power dissipation
P
in
75mW
Output
Load voltage (peak AC)
V
L
30 V
60 V
350 V
400 V
600 V
Continuous load current
I
L
1 A
0.55 A
0.13 A
0.12 A
0.05 A
Peak load current
I
peak
3 A
1.5 A
0.4 A
0.3 A
0.15 A
100 ms (1 shot),
V
L
= DC
Power dissipation
P
out
500mW
Total power dissipation
P
T
550mW
I/O isolation voltage
V
iso
5,000 V AC
Temperature
limits
Operating
T
opr
40
C to +85
C
40
F to +185
F
Non-condensing at
low temperatures
Storage
T
stg
40
C to +100
C
40
F to +212
F
mm
inch
TESTING
GU-E PhotoMOS (AQY21
EH)
104
2. Electrical characteristics (Ambient temperature: 25
C
77
F
)
Note: Recommendable LED forward current I
F
=5 to 10mA. For type of connection, see page 34.
*Turn on/Turn off time
Item
Symbol AQY211EH(A) AQY212EH(A) AQY210EH(A) AQY214EH(A) AQY216EH(A)
Condition
Input
LED operate
current
Typical
I
Fon
1.2mA
I
L
=Max.
Maximum
3.0mA
LED turn off
current
Minimum
I
Foff
0.4mA
I
L
=Max.
Typical
1.1mA
LED dropout
voltage
Typical
V
F
1.25 (1.14 V at I
F
=5mA)
I
F
=50mA
Maximum
1.5V
Output
On resistance
Typical
R
on
0.25
0.85
18
26
52
I
F
=5mA
I
L
=Max.
Within 1 s
on time
Maximum
0.5
2.5
25
35
120
Off state leakage
current
Maximum
I
Leak
1
A
I
F
=0mA
V
L
=Max.
Transfer
character-
istics
Turn on time*
Typical
T
on
1.5ms
1ms
0.5ms
I
F
=5mA
I
L
=Max.
Maximum
5ms
4ms
2.0ms
Turn off time*
Typical
T
off
0.1ms
0.05ms
0.08ms
0.04ms
I
F
=5mA
I
L
=Max.
Maximum
1.0ms
I/O capacitance
Typical
C
iso
0.8pF
f =1MHz
V
B
=0V
Maximum
1.5pF
Initial I/O isolation
resistance
Minimum
R
iso
1,000M
500V DC
Ton
Input
Output
10%
90%
Toff
REFERENCE DATA
1-(1). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: 40
C to +85
C
40
F to +185
F
1-(2). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: 40
C to +85
C
40
F to +185
F
1-(3). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: 40
C to +85
C
40
F to +185
F
0
200
150
100
50
0
20
40
60
20
80 85 100
40
AQY210EH
AQY214EH
Ambient temperature,
C
Load current, mA
0
0.6
0.2
0.8
40 20
1.2
0
20
40
60
80
100
0.4
1
85
AQY211EH
AQY212EH
Ambient temperature,
C
Load current, mA
0
0.04
0.02
0.01
0.05
40 20
0.07
0
20
40
60
80
100
0.03
0.06
85
AQY216EH
Ambient temperature,
C
Load current, mA
I
For Dimensions, see Page 29.
I
For Schematic and Wiring Diagrams, see Page 34.
I
For Cautions for Use, see Page 38.
GU-E PhotoMOS (AQY21
EH)
105
2-(1). On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 3 and 4;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
2-(2). On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 3 and 4;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
2-(3). On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 3 and 4;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
10
20
30
40
40
50
0
0
20
20
40
60
8085
AQY210EH
AQY214EH
Ambient temperature,
C
On resistance,
0
40
20
2
1.5
1
0.5
0
20
40
60
80 85
AQY212EH
AQY211EH
Ambient temperature,
C
On resistance,
0
40
20
100
80
60
40
20
0
20
40
60
80 85
AQY216EH
Ambient temperature,
C
On resistance,
3-(1). Turn on time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
3-(2). Turn on time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
4-(1). Turn off time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
0.5
1
1.5
2
40
2.5
0
20
20
40
60
8085
Ambient temperature,
C
Turn on time, ms
AQY210EH, AQY214EH
40
20
0
20
0.5
0
1.5
1
2.5
2
3.5
3
4
40
60
80 85
Ambient temperature,
C
Turn on time, ms
AQY211EH
AQY212EH
AQY216EH
0
0.05
0.1
0.15
0.2
40
0.25
0
20
20
40
60
8085
Ambient temperature,
C
Turn off time, ms
AQY210EH, AQY214EH
4-(2). Turn off time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate current vs. ambient
temperature characteristics
Sample: All types; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
6. LED turn off current vs. ambient temperature
characteristics
Sample: All types; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
40
20
0
20
0.1
0.2
0.3
0
0.4
0.5
40
60
80 85
AQY212EH
AQY211EH
AQY216EH
Ambient temperature,
C
Turn off time, ms
0
1
2
3
4
40
5
0
20
20
40
60
8085
Ambient temperature,
C
LED operate current, mA
0
1
2
3
4
40
5
0
20
20
40
60
8085
Ambient temperature,
C
LED turn off current, mA
7. LED dropout voltage vs. ambient
temperature characteristics
Sample: All types; LED current: 5 to 50 mA
8-(1). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 3 and 4;
Ambient temperature: 25
C
77
F
8-(2). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 3 and 4;
Ambient temperature: 25
C
77
F
0
20
40
20
40
60
8085
LED dropout voltage, V
1.5
1.4
1.3
1.2
1.1
1.0
0
50mA
30mA
20mA
10mA
5mA
Ambient temperature,
C
5
3
1
5
3
140
120
60
40
20
20
40
60
80
100
120
140
100
80
2
4
2
4
AQY210EH
AQY214EH
1
Voltage, V
Current, mA
0
0.1
0.2
0.3
0
AQY212EH
AQY211EH
Voltage, V
Current, mA
0.3
0.2
0.1
1
1.5
0.5
1.5
1
0.5
GU-E PhotoMOS (AQY21
EH)
106
8-(3). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 3 and 4;
Ambient temperature: 25
C
77
F
9-(1). Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 3 and 4;
Ambient temperature: 25
C
77
F
9-(2). Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 3 and 4;
Ambient temperature: 25
C
77
F
AQY216EH
0.04
0.06
0.02
0.06
0.04
0.02
0
0
1
3
4
2
1
2
3
4
Voltage, V
Current, mA
0
60
100
10
3
10
6
10
9
10
12
20
40
80
AQY214EH
AQY210EH
Load voltage, V
Off state leakage current, A
80
60
40
20
10
11
10
13
10
9
10
7
10
5
0.001
0
100
AQY216EH
AQY212EH
AQY211EH
Load voltage, V
Off state leakage current, A
10-(1). Turn on time vs. LED forward current
characteristics
Measured portion: between terminals 3 and 4;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
C
77
F
10-(2). Turn on time vs. LED forward current
characteristics
Measured portion: between terminals 3 and 4;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
C
77
F
11-(1). Turn off time vs. LED forward current
characteristics
Measured portion: between terminals 3 and 4;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
C
77
F
0
0.5
1
1.5
2
3
2.5
10
0
20
30
40
50
60
AQY216EH
AQY210EH
AQY214EH
LED forward current, mA
Turn on time, ms
LED forward current, mA
0
3
2.25
1.5
0.75
0
20
40
50
30
10
AQY211EH
AQY212EH
Turn on time, ms
0
0.05
0.1
10
0
20
30
40
0.2
50
60
0.15
AQY216EH
AQY210EH AQY214EH
LED forward current, mA
Turn off time, ms
11-(2). Turn off time vs. LED forward current
characteristics
Measured portion: between terminals 3 and 4;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
C
77
F
12-(1). Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 3 and 4;
Frequency: 1 MHz; Ambient temperature: 25
C
77
F
12-(2). Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 3 and 4;
Frequency: 1 MHz; Ambient temperature: 25
C
77
F
0
0.4
0.3
0.2
0.1
0
20
40
50
30
10
AQY211EH
AQY212EH
LED forward current, mA
Turn off time, ms
0
50
40
30
20
10
10
20
30
40
50
0
AQY216EH
AQY210EH
AQY214EH
Applied voltage, V
Output capacitance, pF
0
50
100
150
200
250
300
350
400
0
20
5
30
25
15
10
AQY211EH
AQY212EH
Applied voltage, V
Output capacitance, pF
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