Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL
TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
DATA SHEET
2002
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
Low collector saturation voltage
Fast switching speed
Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-100
V
Collector to emitter voltage
V
CEO
-100
V
Emitter to base voltage
V
EBO
-7.0
V
Collector current (DC)
I
C(DC)
-7.0
A
Collector current (pulse)
I
C(pulse)
*
-15
A
Base current (DC)
I
B(DC)
-3.5
A
Total power dissipation
P
T
(Tc = 25
C)
40
W
Total power dissipation
P
T
(Ta = 25
C)
1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
300
s, duty cycle 10%
PACKAGE DRAWING (UNIT: mm)
Pin Connection
Data Sheet D16118EJ2V0DS
2
2SA1010
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
=
-5.0 A, I
B1
=
-0.5 A, L = 1 mH
-100
V
Collector to emitter voltage
V
CEX(SUS)1
I
C
=
-5.0 A, I
B1
=
-I
B2
=
-0.5 A,
V
BE(OFF)
= 5.0 V, L = 180
H, clamped
-100
V
Collector to emitter voltage
V
CEX(SUS)2
I
C
=
-10 A, I
B1
=
-1.0 A, I
B2
=
-0.5 A,
V
BE(OFF)
= 5.0 V, L = 180
H, clamped
-100
V
Collector cutoff current
I
CBO
V
CB
=
-100 V, I
E
= 0
-10
A
Collector cutoff current
I
CER
V
CE
=
-100 V, R
BE
= 51
, Ta = 125 C
-1.0
mA
Collector cutoff current
I
CEX1
V
CE
=
-100 V, V
BE(OFF)
= 1.5 V
-10
A
Collector cutoff current
I
CEX2
V
CE
=
-100 V, V
BE(OFF)
= 1.5 V,
Ta = 125
C
-1.0
mA
Emitter cutoff current
I
EBO
V
EB
=
-5.0 V, I
C
= 0
-10
A
DC current gain
h
FE1
V
CE
=
-5.0 V, I
C
=
-0.5 A*
40
200
DC current gain
h
FE2
V
CE
=
-5.0 V, I
C
=
-3.0 A*
40
200
DC current gain
h
FE3
V
CE
=
-5.0 V, I
C
=
-5.0 A*
20
Collector saturation voltage
V
CE(sat)
I
C
=
-5.0 A, I
B
=
-0.5 A*
-0.6
V
Base saturation voltage
V
BE(sat)
I
C
=
-5.0 A, I
B
=
-0.5 A*
-1.5
V
Turn-on time
t
on
0.5
s
Storage time
t
stg
1.5
s
Fall time
t
f
I
C
=
-5.0 A, R
L
= 10
,
I
B1
=
-I
B2
=
-0.5 A, V
CC
-50 V
Refer to the test circuit.
0.5
s
* Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
40 to 80
60 to 120
100 to 200
TYPICAL CHARACTERISTICS (Ta = 25
C)
T
o
t
a
l
P
o
w
e
r
Di
s
s
i
pa
t
i
on
P
T
(W)
Ambient Temperature Ta (
C)
Collector to Emitter Voltage V
CE
(V)
Col
l
e
c
t
or Current
I
C
(
A
)
2 mm aluminum board,
no insulating board,
grease coating, natural
air cooling
With infinite heatsink
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