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Электронный компонент: 2SA1222

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1998
Document No. D16143EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SA1221, 1222
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Ideal for use of high withstanding voltage current such as TV
vertical deflection output, audio output, and variable power
supplies.
Complementary transistor with 2SC2958 and 2SC2959
V
CEO
= 140 V: 2SA1221/2SC2958
V
CEO
= 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25



C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-160
V
Collector to emitter voltage
V
CEO
-140/160
V
Emitter to base voltage
V
EBO
-5.0
V
Collector current (DC)
I
C(DC)
-500
mA
Collector current (pulse)
I
C(pulse)
*
-1.0
A
Total power dissipation
P
T
1.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
10 ms, duty cycle 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-100 V, I
E
= 0
-200
nA
Emitter cutoff current
I
EBO
V
EB
=
-5.0 V, I
C
= 0
-200
nA
DC current gain
h
FE
**
V
CE
=
-2.0 V, I
C
=
-100 mA
100
150
400
DC base voltage
V
BE
**
V
CE
=
-5.0 V, I
C
=
-20 mA
-0.6
-0.64
-0.7
V
Collector saturation voltage
V
CE(sat)
**
I
C
=
-1.0 A, I
B
=
-0.2 A
-0.6
-0.9
V
Base saturation voltage
V
BE(sat)
**
I
C
=
-1.0 A, I
B
=
-0.2 A
-1.1
-0.3
V
Output capacitance
C
ob
V
CB
=
-10 V, I
E
= 0, f = 1.0 MHz
24
40
pF
Gain bandwidth product
f
T
V
CE
=
-10 V, I
E
= 20 mA
30
45
MHz
** Pulse test PW
350
s, duty cycle 2% per pulsed
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The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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