Document No. D16119EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation
and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
Large current capacity:
I
C(DC)
:
-10 A, I
C(pulse)
:
-15 A
High h
FE
and low collector saturation voltage:
h
FE
= 200 MIN. (@V
CE
=
-2.0 V, I
C
=
-0.5 A)
V
CE(sat)
-0.25 V (@I
C
=
-4.0 A, I
B
=
-0.05 A)
QUALITY GRADES
Standard
Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-30
V
Collector to emitter voltage
V
CEO
-20
V
Emitter to base voltage
V
EBO
-10
V
Collector current (DC)
I
C(DC)
-10
A
Collector current (pulse)
I
C(pulse)
*
-15
A
Base current (DC)
I
B(DC)
-0.5
A
Total power dissipation
P
T
(T
a
= 25
C)**
1.0
W
Total power dissipation
P
T
(T
c
= 25
C)
15
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
10 ms, duty cycle 50%
** Printing board mounted
Data Sheet D16119EJ1V0DS
2
2SA1615, 1615-Z
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-20 V, I
E
= 0
-1.0
A
Emitter cutoff current
I
EBO
V
EB
=
-8.0 V, I
C
= 0
-1.0
A
DC current gain
h
FE1
*
V
CE
=
-2.0 V, I
C
=
-0.5 A
200
600
DC current gain
h
FE2
*
V
CE
=
-2.0 V, I
C
=
-4.0 A
160
Collector saturation voltage
V
CE(sat)
*
I
C
=
-4.0 A, I
B
=
-0.05 A
-0.2
-0.25
V
Base saturation voltage
V
BE(sat)
*
I
C
=
-4.0 A, I
B
=
-0.05 A
-0.9
-1.2
V
Gain bandwidth product
f
T
V
CE
=
-5.0 V, I
E
= 1.5 A
180
MHz
Output capacity
C
ob
V
CB
=
-10 V, I
E
= 0, f = 1.0 MHz
220
pF
Turn-on time
t
on
80
ns
Storage time
t
stg
300
ns
Fall time
t
f
I
C
=
-5.0 A, I
B1
=
-I
B2
= 0.125 A,
R
L
= 2.0
, V
CC
-10 V
60
ns
* Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
L
K
h
FE2
200 to 400
300 to 600
PACKAGE DRAWING (UNIT: mm)
2SA1615 2SA1615-Z
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Collector (fin)
Data Sheet D16119EJ1V0DS
3
2SA1615, 1615-Z
TYPICAL CHARACTERISTICS (Ta = 25
C)
T
o
t
a
l
P
o
w
e
r Di
ss
i
pat
i
o
n
P
T
(
W
)
Case Temperature T
C
(
C)
Collector to Emitter Voltage V
CE
(V)
Case Temperature T
C
(
C)
I
C
Derat
i
ng
dT
(%
)
Col
l
e
c
t
or Current
I
C
(A
)
Collector to Emitter Voltage V
CE
(V)
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(A)
Col
l
e
c
t
or Current
I
C
(
A
)
DC Current
Gai
n
h
FE
Col
l
e
c
t
or Current
I
C
(
A
)
Single pulse
15
10
5
PDF 
ZIP
