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Электронный компонент: 2SA1840

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Document No. D15589EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SA1840
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1840 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such
as PWM control for pulse motors or brushless motors in OA and FA equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Auto-mounting possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
On-chip C-to-E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25



C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-100
V
Collector to emitter voltage
V
CEO
-100
V
Emitter to base voltage
V
EBO
-8.0
V
Collector current (DC)
I
C(DC)
+5.0
A
Collector current (pulse)
I
C(pulse)
*
+10
A
Base current (DC)
I
B(DC)
-0.5
A
Total power dissipation
P
T
**
1.8
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
300
s, duty cycle 10%
** T
a
= 25
C
Data Sheet D15589EJ2V0DS
2
2SA1840
ELECTRICAL CHARACTERISTICS (Ta = 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-100 V, I
E
= 0
-1.0
A
Emitter cutoff current
I
EBO
V
EB
=
-5 V, I
C
= 0
-5.0
mA
DC current gain
h
FE1
*
V
CE
=
-2.0 V, I
C
=
-2.0 A
2,000
20,000
-
DC current gain
h
FE2
*
V
CE
=
-2.0 V, I
C
=
-4.0 A
500
-
Collector saturation voltage
V
CE(sat)
*
I
C
=
-2.0 A, I
B
=
-2.0 mA
-0.9
-1.5
V
Base saturation voltage
V
BE(sat)
*
I
C
=
-2.0 A, I
B
=
-2.0 mA
-1.5
-2.0
V
Turn-on time
t
on
0.7
s
Storage time
t
stg
1.7
s
Fall time
t
f
I
C
=
-2.0 A, I
B1
=
-I
B2
=
-2.0 mA
R
L
= 25
, V
CC
-50 V
Refer to the test circuit.
0.7
s
Collector capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
45
pF
* Pulse test PW
350
s, Duty Cycle 2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base
2. Collector
3. Emitter
Data Sheet D15589EJ2V0DS
3
2SA1840
TYPICAL CHARACTERISTICS (Ta = 25



C)
T
o
ta
l
P
o
w
e
r
D
i
s
s
ip
a
t
io
n

P
T
(W)
Ambient Temperature T
a
(
C)
Collector to Emitter Voltage V
CE
(V)
Case Temperature T
c
(
C)
IC
D
e
r
a
tin
g

d
T

(
%
)
Col
l
e
c
t
or Current
I
C
(
A
)
Pulse Width PW (s)
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Single pulse
T
r
ans
i
ent
T
h
e
r
m
a
l
R
e
s
i
st
an
c
e

r
t
h
(j
-a
)
(
C/
W)
DC Current
Gai
n
h
FE
Col
l
e
c
t
or Current
I
C
(A
)
Single pulse
Data Sheet D15589EJ2V0DS
4
2SA1840
Collector to Base Voltage V
CB
(V)
Collector Current I
C
(A)
Collector Current I
C
(A)
Col
l
e
c
t
or S
a
t
u
ra
t
i
on V
o
l
t
age
V
CE
(
s
a
t
)
(V
)
B
a
s
e

S
a
t
u
ra
t
i
on V
o
l
t
age
V
BE(sa
t
)
(
V
)
Col
l
e
c
t
or Capa
c
i
t
a
n
c
e
C
ob
(
p
F)
Data Sheet D15589EJ2V0DS
5
2SA1840
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2SA1840
M8E 00. 4
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