ChipFind - документация

Электронный компонент: 2SA1977

Скачать:  PDF   ZIP

Document Outline

DATA SHEET
Silicon Transistor
2SA1977
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
1996
Document No. P10925EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PRELIMINARY DATA SHEET
FEATURES
PACKAGE DIMENSION (in millimeters)
High f
T
f
T
= 8.5 GHz TYP.
High gain
| S
21e
|
2
= 12.0 dB TYP. @f = 1.0 GHz, V
CE
=
-
8 V, I
C
=
-
20 mA
High-speed switching characterstics
Equivalent NPN transistor is the 2SC3583.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25



C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CB0
-
20
V
Collector to Emitter Voltage
V
CE0
-
12
V
Emitter to Base Voltage
V
EB0
-
3.0
V
Collector Current
I
C
-
50
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
-
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25



C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CB0
V
CB
=
-
10 V
-
0.1
A
Emitter Cutoff Current
I
EB0
V
EB
=
-
1 V
-
0.1
A
DC Current Gain
h
FE
V
CE
=
-
8 V, I
C
=
-
20 mA
20
100
Gain Bandwidth Product
f
T
V
CE
=
-
8 V, I
C
=
-
20 mA, f = 1 GHz
6.0
8.5
GHz
Collector Capacitance
C
re
*
V
CB
=
-
10 V, I
E
= 0, f = 1 MHz
0.5
1
pF
Insertion Power Gain
| S
21e
|
2
V
CE
=
-
8 V, I
C
=
-
20 mA, f = 1.0 GHz
8.0
12.0
dB
Noise Figure
NF
V
CE
=
-
8 V, I
C
=
-
3 mA, f = 1 GHz
1.5
3
dB
*
Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Rank
FB
Marking
T92
h
FE
20 to 100
2.8+0.2
_
1.5
0.65
+0.1
0.15
2
1
3
2.9
+
0.2
_
0.95
0.95
0.4
+0.1
0.05
0.4
+0.1
0.05
Marking
0.16
+0.1
0.06
0.3
1.1 to 1.4
0 to 0.1
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking; T92
2
2SA1977
SWITCHING CHARACTERISTICS
V
in
= 1 V
TYP.
Turn-on Delay Time
t
on
(delay)
1.08
ns
Rise Time
t
r
0.66
ns
Turn off Delay Time
t
off
(delay)
0.32
ns
Fall Time
t
f
0.78
ns
SWITCHING TIME MEASUREMENT CIRCUIT
V
CC
( )
R
C1
R
C2
R
L1
V
OUT
R
L2
V
SS
( )
50
R
E
V
in
R
S
Sampling
Oscilloscope
V
in
V
OUT
20 ns
t
r
t
r
t
off (delay)
t
on (delay)
V
EE
( + )
V
in
= 1 V, V
BB
=
-
0.5 V, R
C1
= R
C2
R
S
R
C
R
L1
R
L2
R
E
V
EE
V
CC
(
)
(
)
(
)
(
)
(
)
(V)
(V)
160
1 k
200
250
2.7 k
27
26.3
Parameter
Symbol
Unit
3
2SA1977
TYPICAL CHARACTERISTICS
0
50
100
150
200
100
200
300
400
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - mV
T
A
- Ambient Temperature - C
4
2SA1977
0.1
1.0
10
100
1000
0.01
0.1
1.0
10
0.1
1.0
10
100
1000
0.01
0.1
1.0
10
V
BE
(ON) - DC Base Voltage - V
V
CE(sat)
- Collector Saturation Voltage - V
V
BE(sat)
- Base Saturation Voltage - V
I
C
- Collector Current - mA
BASE TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
I
C
= 10 I
B
V
BE (S)
V
CE (S)
V
CE
= 1 V
I
C
- Collector Current - mA
5
2SA1977
1
10
100
0
5
10
15
1
10
100
0
2
6
10
4
8
1
10
100
0
0.5
1
1.5
0.1
15
0
15
35
0.2
0.3
0.4 0.5
1.0
2.0
3.0
10
5
5
10
20
25
30
|S
21e
|
2
- Insertion Power Gain - dB
INSERTION GAIN vs. FREQUENCY
I
C
- Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
V
CE
= 8 V
f
T
- Gain Bandwidth Product - GHz
V
CE
= 8 V
f = 1 GHz
C
re
- Collector Feed-back Capacitance - pF
V
CB
- Collector to Base Voltage - V
|S
21e
|
2
- Insertion Power Gain - dB
f - Frequency - GHz
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
INSERTION GAIN vs. FREQUENCY
V
CE
= 8 V
I
C
= 20 mA
I
C
- Collector Current - mA