Document Outline
- COVER
- FEATURES
- PACKAGE DIMENTIONS
- ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
- ELECTRICAL CHARACTERISTICS (TA = 25 C)
- hFE Classification
- SWITCHING CHARACTERISTICS
- SWITCHING TIME MEASUREMENT CIRCUIT
- TYPICAL CHARACTERISTICS
- S-PARAMETER
DATA SHEET
Silicon Transistor
2SA1978
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
1996
Document No. P11028EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PRELIMINARY DATA SHEET
FEATURES
PACKAGE DIMENSIONS
High f
T
(in milimeters)
f
T
= 5.5 GHz TYP.
| S
21e
|
2
= 10.0 dB TYP. @f = 1.0 GHz, V
CE
=
-
10 V, I
C
=
-
15 mA
High speed switching characteristics
Equivalent NPN transistor is the 2SC2351.
Alternative of the 2SA1424.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CB0
-
20
V
Collector to Emitter Voltage
V
CE0
-
12
V
Emitter to Base Voltage
V
EB0
-
3.0
V
Collector Current
I
C
-
50
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
i
150
C
Storage Temperature
T
stg
-
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CB0
V
CB
=
-
10 V
-
0.1
A
Emitter Cutoff Current
I
EB0
V
EB
=
-
2 V
-
0.1
A
DC Current Gain
h
FE
V
CE
=
-
10 V, I
C
=
-
15 mA
20
40
100
Gain Bandwidth Product
f
T
V
CE
=
-
10 V, I
C
=
-
15 mA
4.0
5.5
GHz
Collector Capacitance
C
re
*
V
CB
=
-
10 V, I
E
= 0, f = 1 MHz
0.5
1
pF
Insertion Power Gain
| S
21e
|
2
V
CE
=
-
10 V, I
C
=
-
15 mA, f = 1.0 GHz
8.0
10.0
dB
Noise Figure
NF
V
CE
=
-
10 V, I
C
=
-
3.0 mA, f = 1 GHz
2.0
3
dB
*
Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Rank
FB
Marking
T93
h
FE
20 to 100
2.8+0.2
_
1.5
0.65
+0.1
0.15
2
1
3
2.9
+
0.2
_
0.95
0.95
0.4
+0.1
0.05
0.4
+0.1
0.05
Marking
0.16
+0.1
0.06
0.3
1.1 to 1.4
0 to 0.1
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking: T93
2
2SA1978
SWITCHING CHARACTERISTICS
V
in
= 1 V
TYP
Turn-on Delay Time
t
on
(delay)
1.10
ns
Rise Time
t
r
0.77
ns
Turn off Delay Time
t
off
(delay)
0.40
ns
Fall Time
t
f
0.79
ns
SWITCHING TIME MEASUREMENT CIRCUIT
V
CC
( )
R
C1
R
C2
R
L1
V
OUT
R
L2
V
SS
( )
50
R
E
V
EE
( + )
R
S
Sampling
Oscilloscope
V
in
V
OUT
20 ns
t
r
t
f
t
off (delay)
t
on (delay)
V
in
V
in
= 1 V, V
BB
=
-
0.5 V, R
C1
= R
C2
R
S
R
C
R
L1
R
L2
R
E
V
EE
V
CC
(
)
(
)
(
)
(
)
(
)
(V)
(V)
160
1 k
200
250
2.7 k
27
26.3
Parameter
Symbol
Unit
3
2SA1978
TYPICAL CHARACTERISTICS
0
50
100
200
100
200
TOTAL POWER DISSIPATION
VS.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - mV
T
A
- Ambient Temperature - C
150
300
400
I
C -
Collector Current - mA
NF - Noise Figure - dB
V
CE
= 10 V
f = 1 GH
Z
NOISE FIGURE
VS.
COLLECTOR CURRENT
1
0
2
4
6
10
100
0.01
1
0.1
10
100
1000
0.1
1.0
10
0.01
1
0.1
10
100
1000
0.1
1.0
10
COLLECTOR SATURATION AND BASE TO EMITTER
VOLTAGE
VS.
COLLECTOR CURRENT
I
C -
Collector Current - mA
I
C -
Collector Current - mA
V
BE
(ON) - DC Base Voltage - V
V
CE
(sat)
-
Collector Saturation Voltage - V
V
BE (sat)
-
Base Satturation Voltage - V
0
6
14
1
10
100
I
C -
Collector Current - mA
S
21e
2
- Insertion Power Gain - dB
INSERTION GAIN vs. COLLECTOR CURRENT
f = 1 GH
Z
2
4
8
10
12
0
6
14
1
10
100
I
C -
Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
f = 1 GH
Z
2
4
8
10
12
f
T
- Gain Bandwidth Product - GH
Z
V
CE
= 10 V
I
C
= 10 I
B
V
CE
= 1 V
V
CE
= 10 V
V
CE
= 3 V
V
CE
= 1 V
V
CE
= 10 V
V
CE
= 3 V
V
CE
= 1 V
BASE TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
4
2SA1978
1
10
100
0
0.5
1
1.5
2
100
10
10
20
30
200 300
500
1000
3000
0
f = 1 MHz
INSERTION GAIN vs. FREQUENCY
C
re
- Collector Capacitance - pF
V
CBO
- Collector to Base Voltage - V
|S
21e
|
2
- Insertion Power Gain - dB
f - Frequency - MHz
V
CE
= 10 V
I
C
= 15 mA
V
CE
= 1 V
I
C
= 5 mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
0.1
100
10
1
100
10
1
1
10
100
1000
h
FE
- DC Current Gain
I
c
- Collector Current - mA
V
CE
= 10 V
0.1
1
10
100
1000
I
c
- Collector Current - mA
V
CE
= 3 V
V
CE
= 2 V
V
CE
= 1 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
- DC Current Gain
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5
2SA1978
S-PARAMETER
3 GH
Z
3 GH
Z
V
CE
= 10 V, I
C
= 15 mA
f = 100 MH
Z
f = 100 MH
Z
V
CE
= 1 V, I
C
= 5 mA
3 GH
Z
V
CE
= 10 V, I
C
= 15 mA
V
CE
= 1 V, I
C
= 5 mA
100 MH
Z
100 MH
Z
3 GH
Z
S22
S11
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