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Электронный компонент: 2SA812

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sales representative for availability and additional information.
SILICON TRANSISTOR
2SA812
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D17119EJ2V0DS00 (2nd edition)
(Previous No. TC-1479B)
Date Published March 2004 N CP(K)
Printed in Japan
c
The mark shows major revised points.
1984
FEATURES
Complementary to 2SC1623
High DC Current Gain: h
FE
= 200 TYP. (V
CE
=
-6.0 V, I
C
=
-1.0 mA) )
High Voltage: V
CEO
=
-50 V
QUALITY GRADE
Standard
Please refer to "Quality Grades on NEC Semiconductor Devices"
(Document No. C11531E) published by NEC Electronics Corporation to
know the specification of quality grade on the devices and its
recommended applications.

ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
-60 V
Collector to Emitter Voltage
V
CEO
-50 V
Emitter to Base Voltage
V
EBO
-5.0 V
Collector Current (DC)
I
C
-100 mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC SYMBOL
MIN. TYP. MAX. UNIT
TEST
CONDITIONS
Collector Cutoff Current
I
CBO
-0.1
A V
CB
=
-60 V, I
E
= 0 A
Emitter Cutoff Current
I
EBO
-0.1
A V
EB
=
-5.0 V, I
C
= 0 A
DC Current Gain
h
FE
90 200 600
V
CE
=
-6.0 V, I
C
=
-1.0 mA
Note
Collector Saturation Voltage
V
CE(sat)
-0.18
-0.3 V
I
C
=
-100 mA, I
B
=
-10 mA
Base to Emitter Voltage
V
BE
-0.58
-0.62
-0.68 V
V
CE
= 6.0 V, I
C
=
-1.0 mA
Gain Bandwidth Product
f
T
180 MHz
V
CE
=
-6.0 V, I
E
= 10 mA
Output Capacitance
C
ob
4.5 pF
V
CE
=
-10 V, I
E
= 0 A, f = 1.0 MHz
Note Pulsed: PW
350
s, Duty Cycle
2%

h
FE
CLASSIFICATION
Marking
M4 M5 M6 M7
h
FE
90 to 180
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING
(Unit: mm)
2.8 0.2
1.5 TYP.
0.65
+0.1
0.15
0.4
+0.1
0.05
0.95
TYP.
0.95
TYP.
2.9 0.2
0.4
+0.1
0.05
0.3
TYP.
1.1 to 1.4
Marking
0.16
+0.1
0.06
.
1
1. Emitter
2. Base
3. Collector
1
2
3
Data Sheet D17119EJ2V0DS
2
2SA812
TYPICAL CHARACTERISTICS (T
A
= 25C)
I
C
= 10 A
I
S
T
A
=
75
C
Data Sheet D17119EJ2V0DS
3
2SA812
T
A
= 75
C
50
C
25
C
0
C
-25C
s
s
2SA812








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M8E 02. 11-1