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1998
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The 2SB1431 is a Darlington power transistor that can directly
drive from the IC output. This transistor is ideal for motor drivers
and solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High h
FE
due to Darlington connection:
h
FE
2,000 (V
CE
=
-2 V, I
C
=
-3 A)
Mold package that does not require an insulating board or
insulation bushing
QUALITY GRADES
Standard
Please refer to "Quality Grades on NEC Semiconductor Devices"
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-100
V
Collector to emitter voltage
V
CEO
-100
V
Emitter to base voltage
V
EBO
-7.0
V
Collector current (DC)
I
C(DC)
-8.0
A
Collector current (pulse)
I
C(pulse)
*
-12
A
Base current (DC)
I
B(DC)
-0.8
A
Total power dissipation
P
T
(Tc = 25
C)
25
W
Total power dissipation
P
T
(Ta = 25
C)
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
10 ms, duty cycle 50%
PACKAGE DRAWING (UNIT: mm)
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