2001
PNP SILICON EPITAXIAL TRANSISTOR
2SB1572
PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No.
D11204EJ3V0DS00 (3rd edition)
Date Published
July 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Low V
CE(sat)
: V
CE(sat)1
-
0.4 V
Complementary to 2SD2403
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Collector to Base Voltage
V
CBO
-
80
V
Collector to Emitter Voltage
V
CEO
-
60
V
Emitter to Base Voltage
V
EBO
-
6.0
V
Collector Current (DC)
I
C(DC)
-
3.0
A
Collector Current (pulse)
Note1
I
C(pulse)
-
5.0
A
Base Current (DC)
I
B(DC)
-
0.2
A
Base Current (pulse)
Note1
I
B(pulse)
-
0.4
A
Total Power Dissipation
Note2
P
T
2.0
W
Junction Temperature
T
j
150
C
Storage Temperature Range
T
stg
55 to + 150
C
Notes 1. PW
10 ms, Duty Cycle
50%
2. When mounted on ceramic substrate of 16 cm
2
x 0.7 mm
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=
-
80 V, I
E
= 0
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=
-
6.0 V, I
C
= 0
-
100
nA
DC Current Gain
Note
h
FE1
V
CE
=
-
2.0 V, I
C
=
-
0.1 A
80
-
h
FE2
V
CE
=
-
2.0 V, I
C
=
-
1.0 A
100
200
400
-
Base to Emitter Voltage
Note
V
BE
V
CE
=
-
2.0 V, I
C
=
-
0.1 A
-
0.63
-
0.685
-
0.73
V
Collector Saturation Voltage
Note
V
CE(sat)1
I
C
=
-
2.0 A, I
B
=
-
0.1 A
-
0.2
-
0.4
V
Collector Saturation Voltage
Note
V
CE(sat)2
I
C
=
-
3.0 A, I
B
=
-
0.15 A
-
0.3
-
0.6
V
Base Saturation Voltage
Note
V
BE(sat)
I
C
=
-
2.0 A, I
B
=
-
0.1 A
-
0.89
-
1.2
V
Gain Bandwidth Product
f
T
V
CE
=
-
10 V, I
E
= 0.3 A
160
MHz
Output Capacitance
C
ob
V
CB
=
-
10 V, I
E
= 0, f = 1.0 MHz
45
pF
Turn-on Time
t
on
I
C
=
-
1.0 A, V
CC
=
-
10 V,
155
ns
Storage Time
t
stg
R
L
= 5.0
, I
B1
=
-
I
B2
=
-
0.1 A,
510
ns
Fall Time
t
f
35
ns
Note Pulsed: PW
350
s, Duty Cycle
2%
h
FE
CLASSFICATION
Marking
HX
HY
HZ
h
FE2
100 to 200
160 to 320
200 to 400
PACKAGE DRAWING (Unit: mm)
1.60.2
4.50.1
0.42
0.06
0.8 MIN.
1.5
0.42
0.06
0.47
0.06
3.0
2.50.1
4.00.25
0.41
+0.03
0.05
1.50.1
E
C
B
E: Emitter
C: Collector (Fin)
B: Base
Data Sheet D11204EJ3V0DS
2
2SB1572
TYPICAL CHARACTERISTICS (T
A
= 25C)
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
-
1000
-
500
-
200
-
100
-
50
-
20
-
10
-
1
-
2
-
5
I
C
= 20 I
B
.
I
C
- Collector Current - A
V
CE(sat)
- Collector Saturation Voltage - mV
-
0.1
-
0.02
-
0.05
-
0.01
-
0.2
-
0.5
-
10
-
1
-
2
-
5
T
A
= 125C
75C
25C
0C
-
25C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
-
500
-
300
-
700
-
900
-
1100
-
10
-
5
-
2
-
1
-
0.5
-
0.2
-
0.1
-
0.05
-
0.02
-
0.01
-
0.005
-
0.002
-
0.001
V
BE
- Base to Emitter Voltage - mV
I
C
- Collector Current - A
V
CE
=
-
2 V
T
A
= 125
C
25
C
0
C
75
C
25
C
DC CURRENT GAIN vs. COLLECTOR CURRENT
-
0.1
-
0.02
-
0.05
-
0.01
-
0.2
-
0.5
-
10
-
1
-
2
-
5
1000
100
10
I
C
- Collector Current - A
h
FE
- DC Current Gain
V
CE
=
-
2 V
T
A
= 125C
75C
25C
0C
-
25C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
-
0.2
-
0.4
-
0.6
-
0.8
-
1.0
-
2.0
-
1.6
-
1.2
-
0.8
-
0.4
I
B
=
-
10 mA
-
20 mA
-
30 mA
-
40 mA
-
50 mA
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - A
FORWARD BIAS SAFE OPERATING AREA
-
5
-
2
-
1
-
10
-
100
-
20
-
50
-
10
-
2
-
5
-
1
-
0.5
-
0.2
-
0.1
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - A
T
A
= 25C
Single Pulse
PW = 1 ms
10 ms
100 ms
DC
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - C
0
120
90
30
150
60
100
80
40
60
20
dT - Percentage of Rated Power - %
Data Sheet D11204EJ3V0DS
3
2SB1572
SWITCHING CHARACTERISTICS
t
on
- Turn-On Time -
s
t
stg
- Storage Time -
s
t
f
- Fall Time -
s
I
C
- Collector Current - A
10
1
2
5
0.01
0.02
0.05
0.1
0.2
0.5
t
f
t
on
t
stg
-
0.1
-
0.02
-
0.05
-
0.01
-
0.2
-
0.5
-
10
-
1
-
2
-
5
V
CC
=
-
10 V
I
C
= 20 I
B
.
I
B1
=
-
I
B2
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
-
1000
-
500
-
200
-
100
-
50
-
20
-
10
-
1
-
2
-
5
I
C
= 50 I
B
.
I
C
- Collector Current - A
V
CE(sat)
- Collector Saturation Voltage - mV
-
0.1
-
0.02
-
0.05
-
0.01
-
0.2
-
0.5
-
10
-
1
-
2
-
5
T
A
= 125C
75C
25C
0C
-
25C
OUTPUT CAPACITANCE vs.
REVERSE VOLTAGE
1000
200
500
100
50
20
10
V
CB
- Collector to Base Voltage - V
C
ob
- Outpur Capacitance - pF
f = 1.0 MHz
-
1
-
0.2
-
0.5
-
0.1
-
2
-
5
-
100
-
10
-
20
-
50
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
1000
200
500
100
50
20
10
I
E
- Emitter Current - A
f
T
- Gain Bandwidth Product - MHz
V
CE
=
-
10 V
0.1
0.02
0.05
0.01
0.2
0.5
10
1
2
5
-
10
-
1
-
0.5
-
0.2
-
0.1
-
5
I
C
= 20 I
B
.
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
I
C
- Collector Current - A
V
BE(sat)
- Base Saturation Voltage - V
-
0.1
-
0.02
-
0.05
-
0.01
-
0.2
-
0.5
-
10
-
1
-
2
-
5
2SB1572
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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