1998
Document No. D16147EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SB1578
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SB1578 features high current capacity in small dimension
and is ideal for DC/DC converters and mortor drivers.
FEATURES
New package with dimensions in between those of small signal
and power signal package
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SD2425
QUALITY GRADES
Standard
Please refer to "Quality Grades on NEC Semiconductor Devices"
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
-60
V
Collector to emitter voltage
V
CEO
-60
V
Emitter to base voltage
V
EBO
-6.0
V
Collector current (DC)
I
C(DC)
-5.0
A
Collector current (pulse)
I
C(pulse)
PW
10 ms, duty cycle 50 %
-7.0
A
Base current (DC)
I
B(DC)
-1.0
A
Total power dissipation
P
T
7.5 cm
2
0.7 mm ceramic board used
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Electrode connection
1: Emitter
2: Collector
3: Base
Data Sheet D16147EJ1V0DS
2
2SB1578
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-50 V, I
E
= 0
-10
A
Emitter cutoff current
I
EBO
V
EB
=
-6.0 V, I
C
= 0
-10
A
DC current gain
h
FE1
V
CE
=
-1.0 V, I
C
=
-0.1 A
60
220
-
DC current gain
h
FE2
V
CE
=
-1.0 V, I
C
=
-2.0 A
100
200
400
-
DC current gain
h
FE3
V
CE
=
-2.0 V, I
C
=
-5.0 A
50
150
-
Collector saturation voltage
V
CE(sat)
I
C
=
-2.0 A, I
B
=
-0.2 A
-180
-300
mV
Base saturation voltage
V
BE(sat)
I
C
=
-2.0 A, I
B
=
-0.2 A
-0.9
-1.2
V
Turn-on time
t
on
0.6
s
Storage time
t
stg
0.55
s
Fall time
t
f
I
C
=
-2.0 A, V
CC
=
-10 V
I
B1
=
-I
B2
=
-0.2 A
R
L
= 5.0
0.05
s
h
FE
CLASSIFICATION
Marking
GB1
GB2
GB3
h
FE2
100 to 200
160 to 320
200 to 400
TYPICAL CHARACTERISTICS (Ta = 25
C)
6LQJOH SXOVH
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