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Электронный компонент: 2SB549

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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
FEATURES
Ideal for audio amplifier drivers with 30 W to 50 W output
High voltage
Available for small mount spaces due to small and thin package
Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25



C)
Parameter
Symbol
2SB548/
2SD414
2SB549/
2SD415
Unit
Collector to base voltage
V
CBO
-100/120
V
Collector to emitter voltage
V
CEO
-80/80
-100/100
V
Emitter to base voltage
V
EBO
-5.0/5.0
V
Collector current
I
C(DC)
-0.8/0.8
A
Collector current
I
C(pulse)
*
-1.5/1.5
A
Total power dissipation
P
T
(Ta = 25
C)
1.0
W
Total power dissipation
P
T
(Tc = 25
C)
10
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
10 ms, duty cycle 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-80/80 V, I
E
= 0
-1.0/1.0
A
Emitter cutoff current
I
EBO
V
EB
=
-3.0/3.0 V, I
C
= 0
-1.0/1.0
A
DC current gain
h
FE1
V
CE
=
-5.0/5.0 V, I
C
=
-2.0/2.0 mA*
20
DC current gain
h
FE2
V
CE
=
-5.0/5.0 V, I
C
=
-200/200 mA*
40
90
320
Collector saturation voltage
V
CE(sat)
I
C
=
-500/500 mA, I
B
=
-50/50 mA*
-0.4/0.3
-2.0/2.0
V
Base saturation voltage
V
BE(sat)
I
C
=
-500/500 mA, I
B
=
-50/50 mA*
-0.9/0.9
-1.5/1.5
V
Gain bandwidth product
f
T
V
CE
=
-5.0/5.0 V, I
C
=
-100/100 mA
70/45
MHz
Collector capacitance
C
ob
V
CB
=
-10/10 V, I
E
= 0, f = 1.0 MHz
25/15
pF
*
Pulse test PW
350
s, duty cycle 2%
h
FE2
CLASSIFICATION
Marking
S
R
Q
P
h
FE2
40 to 80
60 to 120
100 to 200
160 to 320
Data Sheet D16141EJ2V0DS
2
2SB548, 549/2SD414, 415
TYPICAL CHARACTERISTICS (Ta = 25



C)
Note
T
o
t
a
l
P
o
w
e
r
Di
s
s
i
pa
t
i
on
P
T
(W)
Temperature T (
C)
Note
1.
Tc = 25
C
2.
Derate the dissipation limited
area by case temperature and
duty cycle.
3.
S/b limited area is a single
pulse. Derate this area by
Collector to Emitter Voltage V
CE
(V)
Case Temperature Tc (
C)
Derat
i
ng dT
(
%
)
T
r
ans
i
ent
T
h
e
r
m
a
l
R
e
si
st
an
c
e

R
th
(
C/
W)
Collector to Emitter Voltage V
CE
(V)
Pulse Width PW (ms)
Collector to Emitter Voltage V
CE
(V)
1.
Tc = 25
C
2.
Derate the dissipation limited
area by case temperature and
duty cycle.
3.
S/b limited area is a single
pulse. Derate this area by case
temperature.
Col
l
e
c
t
or Current
I
C
(A
)
Col
l
e
c
t
or Current
I
C
(A
)
Col
l
e
c
t
or Current
I
C
(A
)
Note
1. 1 mm aluminum board
for heatsink
2. No insulating board
3. Silicon grease coating
4. Horizontal level
With infinite heatsink
Without te heatsink
Note
Data Sheet D16141EJ2V0DS
3
2SB548, 549/2SD414, 415
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2SB548, 549/2SD414, 415
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
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