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Электронный компонент: 2SC2148

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DATA SHEET
SILICON TRANSISTORS
DESCRIPTION
The 2SC2148, 2SC2149 are economical microwave transistors
encapsulated into new hermetic stripline packages, "micro X".
These are designed for small signal amplifier, low noise amplifier,
and oscillator applications in the L to C band, and CML circuit use.
FEATURES
2SC2148 NF: 2.1 dB TYP. @f = 500 MHz
2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz
Derating curves of the 2SC2148, 2SC2149.
The maximum junction temperature of these transistors is allowed up to 200
C, but the ambient or storage
temperature is limitted to 150
C. The operating junction temperature is estimated with power consumption (P
T
) and
thermal resistance mentioned on these derating curves.
2SC2148, 2SC2149
Document No. P11809EJ2V0DS00 (2nd edition)
(Previous No. TC-1428)
Date Published August 1996 P
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
PACKAGE DIMENSIONS
(Unit : mm)
1
2
0.50.05
0.50.05
2.550.2
2.1
3
4
4.0 MIN.
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
4.0 MIN.
4.0 MIN.
1.8 MAX.
0.55
0.1
+0.06
-
0.03
4.0 MIN.
45
The information in this document is subject to change without notice.
2SC2148, 2SC2149
2
2SC2148
2SC2149
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
600
400
200
0
50
100 110
140 150
200
T
A
-
Ambient Temperature
-
C
P
T
-
Total Power Dissipation
-
mW
free-air; R
th(j-a)
600
C/W
with infinite heat sink; R
th(j-c)
120
C/W
mounting on ceramic boad with solder
(Al
2
O
3
20
50
0.635 mm)
; R
th(j-a)
180
C/W
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
500
400
300
200
100
0
50
48
100
T
A
-
Ambient Temperature
-
C
150
200
free-air; R
th(j-a)
610
C/W
with infinite heat sink; R
th(j-c)
130
C/W
mounting on ceramic boad with solder
(Al
2
O
3
20
50
0.635 mm)
P
T
-
Total Power Dissipation
-
mW
; R
th(j-a)
190
C/W
2SC2148, 2SC2149
3
2SC2148
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
30
V
Collector to Emitter Voltage
V
CEO
14
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
50
mA
Total Power Dissipation
P
T(T
A
= 48
C)
250
mW
Total Power Dissipation
P
T(Tc = 150
C)
250
mW
Junction Temperature
T
j
200
C
Storage Temperature
Tstg
-
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
= 2.0 V, I
C
= 0
DC Current Gain
h
FE
30
80
200
V
CE
= 10 V, I
C
= 10 mA
Gain Bandwidth Product
f
T
3.0
GHz
V
CE
= 10 V, I
C
= 10 mA
Output Capacitance *
C
ob
0.55
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Gain
S
21e
2
7.5
9.3
dB
V
CE
= 10 V, I
C
= 10 mA, f = 1.0 GHz
Noise Figure
NF
2.1
3.5
dB
V
CE
= 10 V, I
C
= 3.0 mA, f = 500 MHz
Maximum Available Gain
MAG
13.3
dB
V
CE
= 10 V, I
C
= 10 mA, f = 1.0 GHz
* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (T
A
= 25
C)
200
100
50
20
10
0.5
1
5
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 10 V
I
C
-
Collector Current
-
mA
h
FE
-
DC Current Gain
10
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
10
5
1
0.5
0.5
0.6
0.7
0.8
0.9
V
BE
-
Base to Emitter Voltage
-
V
V
CE
= 10 V
I
C
-
Collector Current
-
mA
2SC2148, 2SC2149
4
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
3
5
1
0.5
0.1
0.3
0.5
1
5
10
50
I
C
-
Collector Current
-
mA
f
T
-
Gain Bandwidth Product
-
GHz
INSERTION GAIN vs.
COLLECTOR CURRENT
15
10
5
0
0.5
1
5
10
50
I
C
-
Collector Current
-
mA
V
CE
= 10 V
f = 1.0 GHz
S
21e
2
-
Insertion Gain
-
dB
COLLECTOR AND EMITTER CAPACITANCE vs.
REVERSE VOLTAGE
3
2
1
0.5
0.3
0
0.5
1
2
5
10
20 30
V
CB
-
Collector to Base Voltage
-
V
V
EB
-
Emitter to Base Voltage
-
V
f = 1.0 MHz
V
CE
= 10 V
C
ob
-
Collector Capacitance
-
pF
C
ib
-
Emitter Capacitance
-
pF
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
5
1
2
3
4
0
0.5
1
5
10
50
I
C
-
Collector Current
-
mA
V
CE
= 10 V
f = 500 MHz
NF
-
Noise Figure
-
dB
untuned (50
)
tuned
C
ob
C
ib
2SC2148, 2SC2149
5
2SC2149
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
25
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
70
mA
Total Power Dissipation
P
T(T
A
= 25
C)
290
mW
Total Power Dissipation
P
T(Tc = 140
C)
500
mW
Junction Temperature
T
j
200
C
Storage Temperature
T
stg
-
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
= 2.0 V, I
C
= 0
DC Current Gain
h
FE
30
70
200
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
5.0
GHz
V
CE
= 10 V, I
C
= 20 mA
Output Capacitance *
C
ob
0.6
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
12.7
dB
f = 1.0 GHz
Insertion Gain
S
21e
2
5.0
6.7
dB
V
CE
= 10 V, I
C
= 20 mA
f = 2.0 GHz
1.7
dB
f = 1.0 GHz
Noise Figure
NF
2.6
4.0
dB
V
CE
= 10 V, I
C
= 5.0 mA
f = 2.0 GHz
17
dB
f = 1.0 GHz
Maximum Available Gain
MAG
11
dB
V
CE
= 10 V, I
C
= 20 mA
f = 2.0 GHz
* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (T
A
= 25
C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
50
20
10
0.5
1
5
10
50 70
I
C
-
Collector Current
-
mA
V
CE
= 10 V
h
FE
-
DC Current Gain
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
50
20
10
5
2
1
0.5
0.5
0.6
0.7
0.8
0.9
V
BE
-
Base to Emitter Voltage
-
V
V
CE
= 10 V
I
C
-
Collector Current
-
mA