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NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1980, 1999
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
Low noise and high gain
: NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 5.0 mA
Wide dynamic range
: NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, V
CE
= 10 V, I
C
= 15 mA
ORDERING INFORMATION
Part Number
Quantity
2SC2570A
Loose products (500 pcs)
2SC2570A-T
Taping products (Box type) (2 500 pcs)
Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
25
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
70
mA
Total Power Dissipation
P
tot
600
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
Data Sheet P10404EJ3V0DS00
2
2SC2570A
ELECTRICAL CHARACTERISTICS (T
A
= +25 C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Current Gain
h
FE
Note 1
V
CE
= 10 V, I
C
= 20 mA
40
200
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 20 mA
5.0
GHz
Output Capacitance
C
Ob
Note 2
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
0.7
0.9
pF
Insertion Power Gain
|
S
21e
|
2
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
8
10
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
1.5
3.0
dB
Maximum Available Gain
MAG
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
11.5
dB
Collector Cutoff Current
I
CBO
V
CB
= 15 V, I
E
= 0
0.1
A
Emitter Cutoff Current
I
EBO
V
EB
= 2.0 V, I
C
= 0
0.1
A
Notes 1. Pulse Measurement: PW
350
s, Duty Cycle
2%
2. The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.
Data Sheet P10404EJ3V0DS00
3
2SC2570A
TYPICAL CHARACTERISTICS (T
A
= +25 C)
free Air
Total Power Dissipation P
T
(mW)
600
400
200
0
50
100
Operating Ambient Temperature T
A
(
C)
150
200
V
CE
= 10 V
V
CE
= 10 V
DC Current Gain h
FE
200
100
50
20
10
0.5
1
5
Collector Current I
C
(mA)
10
50
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 10 V
Collector Current I
C
(mA)
50
10
5
0.5
1
0.5
0.6
0.7
Base to Emitter Voltage V
BE
(V)
0.8
0.9
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Gain Bandwidth Product f
T
(GH
Z
)
7
5
2
1
0.5
0.2
0.1
0.5
1
5
Collector Current I
C
(mA)
10
70
50
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
V
CE
= 10 V
f = 1.0 GH
Z
Insertion Gain S
21e
2
(dB)
15
10
5
0
0.5
1
5
Collector Current I
C
(mA)
10
70
50
INSERTION GAIN vs.
COLLECTOR CURRENT
Data Sheet P10404EJ3V0DS00
4
2SC2570A
f = 1.0 MH
Z
Output Capacitance C
ob
(pF)
Input Capacitance C
ib
(pF)
2
1
0.5
0.3
0
0.5
1
2
5
Collector to Base Voltage V
CB
(V)
Emitter to Base Voltage V
EB
(V)
10
30
20
OUTPUT AND INPUT
CAPACITANCE vs. REVERSE VOLTAGE
V
CE
= 10 V
f = 1.0 GH
Z
Noise Figure NF (dB)
7
6
5
4
3
2
1
0
0.5
1
10
5
Collector Current I
C
(
m
A)
50 70
NOISE FIGURE vs.
COLLECTOR CURRENT
V
CE
= 10 V
I
C
= 5 mA
20
10
0
0.1
1.0
0.2
0.4
INSERTION POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
0.6
2
0.8
C
ib
C
ob
S
21e
2
G
max
Frequency f (GH
Z
)
Insertion Power Gain S
21e
2
(dB)
Maximum Available Gain G
max.
(dB)
V
CE
= 10 V
I
C
= 20 mA
20
10
0
0.1
1.0
0.2
0.4
INSERTION POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
0.6
2
0.8
S
21e
2
Frequency f (GH
Z
)
Insertion Power Gain S
21e
2
(dB)
Maximum Available Gain G
max.
(dB)
G
max
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
I
C
I
E
N
T
I
N
D
E
G
R
E
E
S
D
A
O
L
D
R
A
W
O
T
S
H
T
G
N
E
L
E
V
A
W
0
0.49
0.48
0.47
0.46
0.45
0.44
0.43
0.42
0.41
0.40
0.39
0.38
0.37
0.36
0.35
0.34
0.33
0.32
0.31
0.30
0.29
0.28
0.27
0.26
0.25
0.24
0.23
0.22
0.21
0.20
0.19
0.18
0.17
0.16
0.15
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.01
0.02
0.03.
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.21
0.22
0.23
0.24
0.25
0.26
0.27
0.28
0.29
0.30
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.40
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.49
-
160
-
150
-
140
-
130
-
120
-
110
-
100
-
90
-
80
-
70
-
60
-
50
-
40
-
30
-
20
-
10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.1
0.3
0.4
0.5
0
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
RESISTANCE COMPONENT
R
Zo
PO
SI
TI
VE
RE
AC
TA
NC
E
CO
MP
ON
EN
T
NE
GA
TIV
E
RE
AC
TA
NC
E
CO
M
PO
NE
NT
-
JX
Zo
+
JX
Zo
1.5GH
Z
1.5GH
Z
S
22e
S
11e
1.0
1.0
0.8
0.6
0.4
0.4
0.2
0.2
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
I
C
I
E
N
T
I
N
D
E
G
R
E
E
S
D
A
O
L
D
R
A
W
O
T
S
H
T
G
N
E
L
E
V
A
W
0
0.49
0.48
0.47
0.46
0.45
0.44
0.43
0.42
0.41
0.40
0.39
0.38
0.37
0.36
0.35
0.34
0.33
0.32
0.31
0.30
0.29
0.28
0.27
0.26
0.25
0.24
0.23
0.22
0.21
0.20
0.19
0.18
0.17
0.16
0.15
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.01
0.02
0.03.
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.21
0.22
0.23
0.24
0.25
0.26
0.27
0.28
0.29
0.30
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.40
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.49
-
160
-
150
-
140
-
130
-
120
-
110
-
100
-
90
-
80
-
70
-
60
-
50
-
40
-
30
-
20
-
10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.1
0.3
0.4
0.5
0
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
RESISTANCE COMPONENT
R
Zo
PO
SI
TI
VE
RE
AC
TA
NC
E
CO
MP
ON
EN
T
NE
GA
TIV
E
RE
AC
TA
NC
E
CO
M
PO
NE
NT
-
JX
Zo
+
JX
Zo
1.5GH
Z
1.5GH
Z
S
22e
S
11e
1.0
1.0
0.8
0.2
0.4
0.6
0.4
0.2
S-PARAMETER
V
CE
= 10 V
I
C
= 5 mA
Z
0
= 50
S-PARAMETER
V
CE
= 10 V
I
C
= 20 mA
Z
0
= 50
Data Sheet P10404EJ3V0DS00
5
2SC2570A
PACKAGE DIMENSION
TO-92 (UNIT:mm)
5.2 MAX.
0.5
1.27
1. BASE
2. EMITTER
3. COLLECTOR
EIAJ
JEDEC
IEC
: SC-43B
: TO-92
: PA33
2.54
2
1
3
5.5 MAX.
14.0 MIN.
4.2 MAX.
1.77 MAX.
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