DATA SHEET
SILICON TRANSISTOR
2SC2954
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. P10405EJ3V0DS00 (3rd edition)
(Previous No. TC-1458A)
Date Published March 1997 N
Printed in Japan
1994
DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for
low noise wide band amplifier and buffer amplifier of OSC, for VHF
and CATV bnad.
FEATURES
Low Noise and High Gain.
f = 200 MHz, 500 MHz
NF: 2.3 dB, 2.4 dB
S
21
e
: 20 dB, 12.5 dB
Large P
T
in Small Package.
P
T
: 2 W with 16 cm
2
0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
35
V
Collector to Emitter Voltage
V
CEO
18
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
150
mA
Total Power Dissipation
P
T
*
2.0
W
Termal Resistance
R
th(j-a)
*
62.5
C/W
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
* With 16 cm
2
0.7 mm
Ceramic Substrate
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
-
0.03
+0.05
0.47
0.06
0.420.06
4.50.1
1.60.2
3.0
E
B
C
1.5
0.8 MIN.
2.50.1
4.00.25
1.50.1
0.42
0.06
2
2SC2954
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 10 V, I
E
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 10 V, I
C
= 50 mA *1
30
100
200
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 50 mA
3.0
4.0
GHz
Feedback Capacitance
C
re
V
CB
= 10 V, Emitter Grounded,
f = 1.0 MHz
1.1
1.8
pF
Insertion Power Gain
S
21
e
2
V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
R
G
= 50
10
12.5
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 30 mA, f = 500 MHz
R
G
= 50
2.4
4.0
dB
*1 Pulse Measurement PW
350
s, duty cycle 2 %/Pulsed
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
a
-Ambient Temperature-
C
0
1.0
2.0
50
100
150
P
T
-Total Power Dissipation-W
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
-Base to Emitter Voltage-V
0
100
200
0.5
1.0
I
C
-Collector Current-mA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
-Collector to Emitter Voltage-V
0
100
200
2
4
6
8
10
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
1
20
30
50
70
100
200
10
10
100 200
h
FE
-DC Current Gain
Free Air R
th(j-a)
312.5
C/W
Ceramic Substrate
16 cm
2
0.7 mm
R
th(j-a)
62.5
C/W
V
CE
= 10 V
2 mA
1.5 mA
1 mA
I
B
= 500 A
0
V
CE
= 10 V
3
2SC2954
FEED-BACK AND OUTPUT CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
CB
-Collector to Base Voltage-V
0
0.2
0.3
0.5
5.0
3.0
2.0
1.0
10
0.1
1.0
0.5
10
5.0
30
C
re
-Feed-back Capacitance-pF
C
ob
-Output Capacitance-pF
f = 1.0 MHz
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
1.0
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.1
10
5.0
50
100
f
T
-Gain Bandwidth Product-MHz
V
CE
= 10 V
INSERTION GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
5
5
10
15
30
25
20
0
10
30
20
100
50
|S
21e
|
2
-Insertion Gain-dB
INSERTION GAIN vs.
FREQYENCY
f-Frequency-GHz
0.1
5
10
15
20
25
30
0
0.2
0.3
0.5
0.7
1.0
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
f = 100 MHz
f = 200 MHz
f = 500 MHz
f = 1 GHz
V
CE
= 10 V
I
C
= 50 mA
C
ob
(Emitter Open)
C
ve
(Emitter Graund)
4
2SC2954
NOISE FIGURE, ASSOCIATED GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
1
5
4
3
2
1
0
6
15
12
9
6
3
0
18
2
3
5
7
10
20
30
50
70 100
G
a
-Associated Gain-dB
NF-Noise Figure-dB
V
CE
= 10 V
f = 500 MHz
R
G
= 50
NF
G
a
NOISE FIGURE,vs.
FREQUENCY
2SC2945 IM
2
, IM
3
vs. I
C
V
CE
= 10 V
V
0
= 110 dB V/75
R
g
= R
e
= 75
at
IM
2
IM
3
f = 90 + 100 MHz
f = 2
200
-
190 MHz
IM
2
IM
3
IM
3
IM
2
(dB)
f-Frequency-GHz
0.1
5
4
3
2
1
0
-
20
-
30
-
40
-
50
-
60
-
70
-
80
20
30
I
C
(mA)
40
60
50
70
6
0.2
0.3
0.5
1.0
NF-Noise Figure-dB
V
CE
= 10 V
I
C
= 30 mA
R
G
= 50
5
2SC2954
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
00
60
70
80
90
100
110
120
130
140
150
-
160
-
150
-
140
-
130
-
120
-
110
-
100
-
90
-
80
-
70
-
60
-
50
-
40
-
30
-
20
-
10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02 0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
0.25
0.25
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
(
+JX
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
Z
O
)
NE
GA
TIV
E
RE
A
CT
A
N
C
E C
OM
P
O
N
E
N
T
P
OS
IT
IV
E
R
E
A
C
TA
N
C
E
CO
M
PO
NE
NT
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
-
JX
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S
21e
-FREQUENCY
S
11e
, S
22e
-FREQUENCY
CONDITION V
CE
= 10 V
I
C
= 50 mA
f = 0.1 to 1.0 GHz (STEP. 100 MHz)
CONDITION V
CE
= 10 V
I
C
= 50 mA
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
10
15 20
5.0
1.0
0.7
0.5
0.3
0.2
0.1 GHz
S
12e
-FREQUENCY
CONDITION V
CE
= 10 V
I
C
= 50 mA
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
0.1 0.15 0.20
0.05
0.1
0.7
0.5
0.3
0.2
0.1
GHz
1 GHz
1.0 GHz
0.1 GHz
0.1 GHz
S
11e
S
22e
PDF 
ZIP