DATA SHEET
SILICON TRANSISTOR
2SC3355
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10355EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1985
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.
FEATURES
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., G
a
= 9.0 dB TYP. @V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
High Power Gain
MAG = 11 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
600
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1.0 V, I
C
= 0
DC Current Gain
h
FE
50
120
300
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
6.5
GHz
V
CE
= 10 V, I
C
= 20 mA
Output Capacitance
C
ob
0.65
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
9.5
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
dB
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
Noise Figure
NF
1.8
3.0
dB
V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
h
FE
Classification
Class
K
Marking
K
h
FE
50 to 300
PACKAGE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
0.5
(0.02)
2.54
(0.1)
1.
2.
3.
Base
Emitter
Collector
EIAJ
JEDEC
IEC
: SC-43B
: TO-92
: PA33
1.27
(0.05)
5.5 MAX.
(0.216 MAX.)
4.2 MAX.
(0.165 MAX.)
1.77 MAX.
(0.069 MAX.)
14 MIN.
(0.551 MIN.)
1
2
3
2
2SC3355
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1000
500
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
T
A
-Ambient Temperature-
C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-mW
h
FE
-DC Current Gain
With heat sink
Free air
heat sink
19
10
7.8
3.8
V
CE
= 10 V
0
5
10
15
0.5
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
f = 1.0 GHz
0.3
0.5
1
2
0
0.5
1
2
5
10
20
30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0
0.5
10
10
5.0
30
I
C
-Collector Current-mA
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-GHz
V
CE
= 10 V
0
10
20
0.1
0.2
0.4
0.6 0.8 10
2
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
I
C
= 20 mA
G
max
|S
21e
|
2
PDF 
ZIP
