DATA SHEET
SILICON TRANSISTOR
2SC3355
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10355EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1985
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.
FEATURES
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., G
a
= 9.0 dB TYP. @V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
High Power Gain
MAG = 11 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
600
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1.0 V, I
C
= 0
DC Current Gain
h
FE
50
120
300
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
6.5
GHz
V
CE
= 10 V, I
C
= 20 mA
Output Capacitance
C
ob
0.65
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
9.5
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
dB
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
Noise Figure
NF
1.8
3.0
dB
V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
h
FE
Classification
Class
K
Marking
K
h
FE
50 to 300
PACKAGE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
0.5
(0.02)
2.54
(0.1)
1.
2.
3.
Base
Emitter
Collector
EIAJ
JEDEC
IEC
: SC-43B
: TO-92
: PA33
1.27
(0.05)
5.5 MAX.
(0.216 MAX.)
4.2 MAX.
(0.165 MAX.)
1.77 MAX.
(0.069 MAX.)
14 MIN.
(0.551 MIN.)
1
2
3
2
2SC3355
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1000
500
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
T
A
-Ambient Temperature-
C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-mW
h
FE
-DC Current Gain
With heat sink
Free air
heat sink
19
10
7.8
3.8
V
CE
= 10 V
0
5
10
15
0.5
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
f = 1.0 GHz
0.3
0.5
1
2
0
0.5
1
2
5
10
20
30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0
0.5
10
10
5.0
30
I
C
-Collector Current-mA
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-GHz
V
CE
= 10 V
0
10
20
0.1
0.2
0.4
0.6 0.8 10
2
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
I
C
= 20 mA
G
max
|S
21e
|
2
3
2SC3355
0
2
1
5
4
3
7
6
0.5
1
5
10
50 70
I
C
-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
NF-Noise Figure-dB
V
CE
= 10 V
f = 1.0 GHz
INTERMODULATIOn DISTORTION vs.
COLLECTOR CURRENT
IM
2
, IM
3
(dB)
IM
3
IM
2
-
30
-
40
-
50
-
60
-
70
-
80
20
30
I
C
-Collector Current-mA
40
60
50
70
V
CE
= 10 V
V
0
+ 100 dB V/50
R
g
= R
e
= 50
at
IM
2
IM
3
f = 90 + 100 MHz
f = 2
200
-
190 MHz
S-PARAMETER
V
CE
= 10 V, I
C
= 20 mA, Z
O
= 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.173
0.054
0.013
0.028
0.062
0.091
0.121
0.148
0.171
0.207
80.3
77.0
57.9
81.8
82.2
80.7
80.2
80.1
80.0
79.9
13.652
7.217
4.936
3.761
3.094
2.728
2.321
2.183
1.892
1.814
103.4
85.1
74.0
62.3
58.3
52.9
44.9
36.4
30.2
21.4
0.041
0.066
0.113
0.144
0.183
0.215
0.240
0.288
0.305
0.344
73.8
71.2
69.3
67.0
64.7
61.7
58.7
50.7
46.8
39.1
0.453
0.427
0.428
0.414
0.392
0.377
0.359
0.354
0.345
0.344
21.8
26.0
30.8
37.2
43.2
51.4
58.3
67.2
80.0
90.4
V
CE
= 10 V, I
C
= 40 mA, Z
O
= 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.011
0.028
0.027
0.043
0.074
0.098
0.120
0.146
0.171
0.205
60.1
42.9
25.1
65.7
75.1
75.6
74.1
75.8
77.2
78.0
13.76
7.338
4.996
3.801
3.134
2.759
2.351
2.203
1.910
1.825
105.4
82.9
72.7
61.9
57.6
52.4
44.4
36.0
29.9
21.3
0.040
0.069
0.114
0.144
0.183
0.221
0.247
0.291
0.299
0.344
73.3
66.7
69.4
67.8
63.4
62.1
55.7
49.6
46.0
39.4
0.421
0.416
0.414
0.406
0.386
0.373
0.356
0.347
0.342
0.335
17.5
22.8
28.7
35.7
41.8
49.8
56.3
66.6
78.8
89.6
4
2SC3355
S-PARAMETER
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
00
60
70
80
90
100
110
120
130
140
150
-
160
-
150
-
140
-
130
-
120
-
110
-
100
-
90
-
80
-
70
-
60
-
50
-
40
-
30
-
20
-
10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02 0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
0.25
0.25
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
(
+JX
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
Z
O
)
NE
GA
TIV
E
RE
A
CT
A
N
C
E C
OM
P
O
N
E
N
T
P
OS
IT
IV
E
R
E
A
C
TA
N
C
E
CO
M
PO
NE
NT
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
-
JX
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S
11e
, S
22e
-FREQUENCY
S
21e
-FREQUENCY
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
4
8
12
16
20
S
21e
0.2 GHz
2.0 GHz
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
0.1
0.2
0.3
0.4 0.5
S
12e
0.2 GHz
2.0 GHz
S
12e
-FREQUENCY
V
CE
= 10 V
CONDITION
V
CE
= 10 V
I
C
= 40 mA
CONDITION
V
CE
= 10 V
I
C
= 40 mA
CONDITION
0.2 GHz
0.2 GHz
2.0 GHz
2.0 GHz
I
C
= 20 mA
S
22e
S
11e
I
C
= 20 mA
I
C
= 40 mA
I
C
= 40 mA
5
2SC3355
[MEMO]
6
2SC3355
[MEMO]
7
2SC3355
[MEMO]
2SC3355
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
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Anti-radioactive design is not implemented in this product.
M4 96. 5
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